Download PM800HSA060

MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA060
FLAT-BASE TYPE
INSULATED PACKAGE
A
K
J
L
M
LABEL
V (2 REQD)
R
C
E
B
E
W
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
12 3 4 5
U φ (4 HOLES)
Sφ
(2 PLS)
T SQ PIN
(5 PLS)
TYP
Q
F
5
4
3
2
1
D
FO
VC
CI
SR
V1
P
G
H
C
N
Features:
u Complete Output Power
Circuit
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VI
C
u Gate Drive Circuit
VCC
TEMP
FO
FO
OUT1
SR
SR
OUT2
CI
IN
SENS
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
SINK
VC
GND
E
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Inches
Millimeters
A
3.46
88.0
M
1.83
46.6
B
3.85
98.0
N
0.28
7.0
C
1.16
29.5
P
0.59
15.0
70.0
Q
0.10
R
0.71
D
2.76
E
3.15±0.01
F
G
2.56
1.34+0.04/-0.02
80.0±0.25
Dimensions
2.54
18.0
65.0
S
0.08
2.0
34.0+1/-0.5
T
0.02 SQ
0.64 SQ
H
0.63
16.0
U
0.26
6.5
J
0.63
16.1
V
M8
M8
K
1.00
25.4
W
0.79
20.0
L
0.20
5.1
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM800HSA060 is a 600V,
800 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
800
60
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Power Device Junction Temperature
Mounting Torque, M6 Mounting Screws
—
3.92 ~ 5.88
N·m
Mounting Torque, M8 Main Terminal Screws
—
8.83 ~ 10.8
N·m
Module Weight (Typical)
Supply Voltage Protected by OC and SC (VD = 13.5 ~16.5V, Inverter Part)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
—
630
Grams
VCC(prot.)
400
Volts
Viso
2500
Vrms
Control Sector, Tj = 25°C unless otherwise specified
Supply Voltage (Applied between V1-VC)
VD
20
Volts
Input Voltage (Applied between C1-VC )
VCIN
10
Volts
Fault Output Supply Voltage (Applied between F O and VNC)
VFO
20
Volts
Fault Output Current (Sink Current of FO Terminal)
IFO
20
mA
VCES
600
Volts
IC
800
Amperes
IGBT Inverter Sector, T j = 25°C unless otherwise specified
Collector-Emitter Voltage (VD = 15V, VCIN = 5V)
Collector Current, (TC = 25°C)
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Peak Collector Current, (TC = 25°C)
Collector Dissipation
I CP
1600
Amperes
PC
2100
Watts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Control Sector
Over Current Trip Level Inverter Part
OC
-20°C ≤ Tj ≤ 125°C, VD = 15V
1000
1350
—
Amperes
Short Circuit Trip Level Inverter Part
SC
-20°C ≤ Tj ≤ 125°C, VD = 15V
1350
1870
—
Amperes
t off(OC)
VD = 15V
—
5
—
µs
OT
Trip Level
100
110
120
°C
OTr
Reset Level
85
95
105
°C
UV
Trip Level
11.5
12.0
12.5
Volts
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
Supply Voltage
Circuit Current
UV r
Reset Level
—
12.5
—
Volts
VD
Applied between V1-VC
13.5
15
16.5
Volts
ID
VD = 15V, VCIN = 5V
—
23
30
mA
Input ON Threshold Voltage
Vth(on)
Applied between C1-VC
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
Applied between C1-VC
1.7
2.0
2.3
Volts
PWM Input Frequency
f PWM
3-φ Sinusoidal
—
15
20
kHz
Arm Shoot-through Blocking Time
tdead
At IPM's Input Terminals
3.5
—
—
µs
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
IFO(L)
VD = 15V, VFO = 15V
—
10
15
mA
tFO
VD = 15V
1.0
1.8
—
ms
Minimum Fault Output Pulse Width
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SR Terminal Output Voltage
VSR
-20°C ≤ Tj ≤ 125°C, Rin = 6.8kΩ
4.5
5.1
5.6
Volts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10.0
mA
Emitter-Collector Voltage
VEC
-IC = 800A, VD = 15V, VCIN = 5V
—
1.9
2.8
Volts
VCE(sat)
VD = 15V, VCIN = 0V, IC = 800A,
—
2.0
2.7
Volts
—
2.1
2.8
Volts
IGBT Inverter Sector
Collector-Emitter Saturation Voltage
Tj = 25°C, Pulsed
VD = 15V, VCIN = 0V, IC = 800A,
Tj = 125°C, Pulsed
Inductive Load Switching Times
0.5
1.4
2.5
µs
trr
VD = 15V, VCIN = 0 ↔ 5V
—
0.15
0.3
µs
tC(on)
VCC = 300V, IC = 800A
—
0.4
1.0
µs
toff
Tj = 125°C
—
2.5
3.5
µs
—
0.5
1.0
µs
ton
tC(off)
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each IGBT
—
—
0.06
°C/Watt
Rth(j-c)F
Each FWDi
—
—
0.09
°C/Watt
Rth(c-f)
Case to Fin Per Module,
—
—
0.038
°C/Watt
Value
Units
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Contact Thermal Resistance
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Supply Voltage
VCC
Applied across C-E Terminals
0 ~ 400
Volts
VD
Applied between V1-VC
15 ± 1.5
Vol
Input ON Voltage
VCIN(on)
Applied between C1-VC
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
Applied between C1-VC
4.0 ~ VSR
Volts
PWM Input Frequency
f PWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
Input Signal
≥ 3.5
µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA060
FLAT-BASE TYPE
INSULATED PACKAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3
1
0
2
1
IC = 800A
Tj = 25oC
Tj = 125oC
0
0
200
400
600
800
1000
13
VD = 17V
15
600
400
200
0
0
13
14
15
16
17
0
1
2
3
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
101
101
101
REVERSE RECOVERY TIME, trr, (µs)
SWITCHING TIMES, tc(on), tc(off), (µs)
103
VCC = 300V
VD = 15V
VCC = 300V
VD = 15V
SWITCHING TIMES, ton, toff, (µs)
Tj = 25oC
Inductive Load
Tj = 25oC
Tj = 125oC
Inductive Load
Tj = 25oC
Tj = 125oC
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toff
ton
100
VCC = 300V
VD = 15V
Inductive Load
o
100
tc(off)
tc(on)
Irr
100
102
trr
Tj = 25 C
Tj = 125oC
103
10-1
102
104
103
10-1
102
104
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
103
1.2
1.2
102
101
Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
VD = 15V
Tj = 25oC
Tj = 125oC
1.1
1.0
0.9
0.8
0.7
1
2
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
3
1.1
1.0
0.9
0.8
0.7
VD = 15V
0
0
0
101
104
103
COLLECTOR CURRENT, IC, (AMPERES)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
10-1
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2
800
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3
OUTPUT CHARACTERISTICS
(TYPICAL)
0
13
15
17
SUPPLY VOLTAGE, VD, (VOLTS)
19
-20
20
60
100
140
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA060
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
14
1.1
UV TRIP-RESET LEVEL,
UV, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
1.2
1.0
0.9
0.8
UVt
UVr
13
12
11
10
0.7
VD = 15V
0
0
-20
20
60
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDANCY
(TYPICAL)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
140
JUNCTION TEMPERATURE, Tj, (oC)
-20
20
60
100
JUNCTION TEMPERATURE, Tj, (oC)
140
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.06oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
100
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10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.09oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000