Download PM75RSA060

MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
U
Q
R
Z
U
Z
AB
12 3 4
U
5678
9 11
W
14 16 18
AB (15 TYP.)
B
M
F E C
X - DIA. (4 TYP.)
P
AE
N
S
M
1. VUPC
2. UFO
3. U P
4. VUPI
5. VVPC
6. VFO
7. VP
8. VVPI
9. VWPC
10. WFO
13 15 17 19
10 12
Y - THD (6 TYP.)
U
W
W
W
U
V
AE
11. WP
12. VWPI
13. VNC
14. VNI
15. BR
16. U N
17. VN
18. WN
19. F O
W
K
J
J
P
D
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
2.54 MM DIA. (2 TYP.)
0.5 MM SQ. PIN
(19 TYP.)
AC
T
UFO
VUPI
VUPC
UP
UN
VN
VNI
VNC
WN
FO
BR
AA
VVPI
AD
V
VVPC
VP
VFO
N
L
VWPC
WP
WFO
VWPI
G H
Features:
u Complete Output Power
Circuit
OUT V CC
FO
IN
SI
GND GND
OUT V CC
IN
FO
SI
GND GND
OUT V CC
IN
FO
SI
GND GND
IN
FO
OUT V CC
SI
GND GND
IN
FO
OUT V CC
SI
GND GND
OUT V CC
IN
FO
SI
GND GND
OUT V CC
IN
FO
SI
GND GND
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TEMP
u Gate Drive Circuit
B
N
W
V
U
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
P
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Inches
Millimeters
A
4.29±0.04
109.0±1.0
Dimensions
R
0.708
17.98
B
3.74±0.02
95.0±0.5
S
0.67
17.0
C
3.46±0.04
88.0±1.0
T
0.52
13.2
D
3.19
81.0
U
0.39
10.0
E
2.91±0.02
74.0±0.5
V
0.31
8.0
F
2.36
60.0
W
0.28
7.0
G
1.28
32.6
X
0.22 Dia.
Dia. 5.5
M5
H
1.24
31.6
Y
Metric M5
J
1.02
26.0
Z
0.127
3.22
0.94
24.0
AA
0.10
2.6
AB
0.08
2.0
K
L
0.87 +0.06/-0 22.0 +1.5/-0.0
M
0.79
20.0
AC
0.07
1.8
N
0.76
19.4
AD
0.06
1.6
P
0.75
19.0
AE
0.02±0.01
0.5±0.3
Q
0.670
17.02
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM75RSA060 is a 600V,
75 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
75
60
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M5 Mounting Screws
—
1.47 ~ 1.96
N·m
Mounting Torque, M5 Main Terminal Screw
—
1.47 ~ 1.96
N·m
Module Weight (Typical)
—
550
Grams
400
Volts
2500
Vrms
Power Device Junction Temperature
Supply Voltage Protected by OC and SC-(V D = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
Control Sector
Supply Voltage (Applied between VUP1-VUPC , VVP1-VVPC, VWP1-VWPC, VN1-VNC)
VD
20
Volts
Input Voltage (Applied between U P-VUPC, VP-VVPC, WP-VWPC, U N · VN · WN · Br-VNC)
VCIN
20
Volts
Fault Output Supply Voltage (Applied between U FO-VUPC, VFO-V VPC, WFO-VWPC , FO-V NC)
VFO
20
Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal)
I FO
20
mA
VCES
600
Volts
IC
75
Amperes
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, ±
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Peak Collector Current, ±
I CP
150
Amperes
Supply Voltage (Applied between P - N)
VCC
450
Volts
VCC(surge)
500
Volts
PC
312
Watts
VCES
600
Volts
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
Brake Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
Supply Voltage (Applied between P - N)
IC
30
Amperes
I CP
60
Amperes
VCC
450
Volts
VCC(surge)
500
Volts
Collector Dissipation
PC
308
Watts
Diode Forward Current
IF
30
Amperes
VR(DC)
600
Volts
Supply Voltage, Surge (Applied between P - N)
Diode DC Reverse Voltage
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
OC
-20°C ≤ T ≤ 125°C, VD =15V
115
161
—
Amperes
39
53
—
Amperes
—
241
—
Amperes
—
79
—
Amperes
Control Sector
Over Current Trip Level Inverter Part
Over Current Trip Level Brake Part
Short Circuit Trip Level Inverter Part
SC
-20°C ≤ T ≤ 125°C, VD =15V
Short Circuit Trip Level Brake Part
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
t off(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
111
118
125
°C
OTr
Reset Level
—
100
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UVr
Reset Level
—
12.5
—
Volts
Supply Voltage
VD
Applied between VUP1-VUPC ,
13.5
15
16.5
Volts
Circuit Current
ID
—
44
60
mA
VVP1 -VVPC, VWP1-VWPC, VN1 -VNC
VD = 15V, VCIN = 15V, VN1-V NC
VD = 15V, VCIN = 15V, VXP1-VXPC
—
13
18
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC, VP-VVPC, WP-VWPC ,
1.7
2.0
2.3
Volts
UN · VN · W N · Br-VNC
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PWM Input Frequency
f PWM
3-φ Sinusoidal
—
15
20
kHz
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
IFO(L)
VD = 15V, VFO = 15V
—
10
15
mA
tFO
VD = 15V
1.0
1.8
—
ms
Minimum Fault Output Pulse Width
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Collector Cutoff Current
Diode Forward Voltage
Collector-Emitter Saturation Voltage
I CES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
VEC
-IC = 75A, VD = 15V, VCIN = 5V
—
2.2
3.3
Volts
VCE(sat)
VD = 15V, VCIN = 0V, IC = 75A
—
1.8
2.7
Volts
VD = 15V, VCIN = 0V, IC = 75A,
—
1.85
2.78
Volts
Tj = 125°C
Inductive Load Switching Times
0.4
0.8
2.0
µs
t rr
VD = 15V, VCIN = 0 ↔ 115V
—
0.15
0.3
µs
t C(on)
VCC = 300V, IC = 75A
—
0.4
1.0
µs
t off
Tj = 125°C
—
2.0
2.9
µs
—
0.5
1.0
µs
—
2.7
3.5
Volts
—
3.1
4.0
Volts
t on
t C(off)
Brake Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, IC = 30A,
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 30A,
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Tj = 125°C
Diode Forward Voltage
VFM
Collector Cutoff Current
ICES
IF = 30A, VD = 15V, VCIN = 5V
—
1.7
2.7
Volts
VCE = VCES, Tj = 25°C
—
VCE = VCES, Tj = 125°C
—
—
1
mA
—
10
mA
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each Inverter IGBT
—
—
0.4
°C/Watt
Rth(j-c)F
Each Inverter FWDi
—
—
1.0
°C/Watt
Rth(c-f)Q
Each Brake IGBT
—
—
0.6
°C/Watt
Contact Thermal Resistance
Rth(c-f)F
Each Brake FWDi
—
—
1.5
°C/Watt
R th(c-f)
Case to Fin Per Module,
—
—
0.027
°C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Value
Units
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 400
Volts
Applied between VUP1-VUPC,
15 ± 1.5
Volts
VD
VN1-VNC, VVP1-VVPC, VWP1 -VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP-VUPC, VP-VVPC, WP-VWPC ,
UN · VN · W N · Br-VNC
4.0 ~ VD
Volts
PWM Input Frequency
f PWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
Input Signal
≥ 2.5
µs
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Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3.0
2.0
1.5
1.0
0.5
2.5
2.0
1.5
1.0
IC = 75A
VCIN = 0V
Tj = 25oC
Tj = 125oC
0.5
0
0
0
20
40
60
80
100
VD = 17V
15
60
13
40
20
0
0
120
Tj = 25oC
VCIN = 0V
12
14
16
18
20
0
0.5
1.0
1.5
2.0
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
EMITTER CURRENT (TYPICAL)
101
100
100
102
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VCC = 300V
VD = 15V
Tj = 25oC
Tj = 125oC
SWITCHING TIMES, tc(on), tc(off), (µs)
toff
100
ton
10-1
101
10-1
tc(on)
VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
10-2
101
102
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
101
trr
VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100
102
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
140
Tj = 25oC
120
100
80
60
0
0
10-1
COLLECTOR CURRENT, IC, (AMPERES)
140
102
Irr
10-2
101
102
OVER CURRENT TRIP LEVEL % (NORMALIZED)
SWITCHING TIMES, ton, toff, (µs)
Inductive Load
REVERSE RECOVERY TIME, trr, (µs)
tc(off)
0.5
1.0
1.5
2.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
2.5
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2.5
80
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS
(TYPICAL)
VD = 15V
120
100
80
60
0
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
VD = 15V
UV
UVr
120
14
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
140
100
80
60
13
12
11
0
0
-50
0
50
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
150
-50
0
50
100
JUNCTION TEMPERATURE, TC, (oC)
JUNCTION TEMPERATURE, Tj, (oC)
150
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.4oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
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100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 1.0oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75RSA060
FLAT-BASE TYPE
INSULATED PACKAGE
Brake Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3.0
3.0
2.5
2.0
1.5
1.0
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
0.5
0
30
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
3.5
2.5
2.0
1.5
1.0
Tj = 25oC
VCIN = 0V
IC = 12A
IC = 30A
0.5
0
0
5
10
15
20
25
30
20
15
10
12
14
16
18
20
0
1
2
3
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
DIODE FORWARD CHARACTERISTICS
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
VD = 17V
13
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
102
Tj = 25oC
VCIN = 0V
0
0
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
SATURATION VOLTAGE VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
101
DIODE FORWARD CURRENT, IF, (AMPERES)
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VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
0
0.4
0.8
1.2
1.6
DIODE FORWARD VOLTAGE, VF, (VOLTS)
2.0
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.06oC/W
10-3
10-3
10-2
10-1
TIME, (s)
100
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 1.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000