Download PM75CSA120

MITSUBISHI INTELLIGENT POWER MODULES
PM75CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
R
W
U
Q
12 3 4
U
5678
13 15 17 19
9 11
10 12
F
Z - DIA. (4 TYP.)
C
AA - THD (6 TYP.)
U
N
AG
S
E
P
M
1. V UPC
2. UFO
3. U P
4. V UPI
5. V VPC
6. VFO
7. V P
8. V VPI
9. V WPC
10. WFO
14 16 18
AD (15 TYP.)
B
M
Y (4 TYP.)
AB
U
AB
AD
W
W
U
V
X
AG
K
J
J
11. W P
12. V WPI
13. V NC
14. V NI
15. NC
16. U N
17. V N
18. W N
19. F O
X
P
D
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
2.54 MM DIA. (2 TYP.)
0.5 MM SQ. PIN
(19 TYP.)
AE
T
G H
V UPC
UP
U FO
V UPI
OUT V CC
FO
OUT V CC
GND GND
FO
OUT V CC
GND GND
V VPC
VP
V FO
V VPI
AC
V WPC
WP
W FO
V WPI
GND GND
UN
FO
OUT V CC
GND GND
VN
FO
OUT V CC
GND GND
OUT V CC
V NI
V NC
WN
FO
GND GND
FO
NC
L
AF
V
FO
N
IN
IN
IN
IN
SI
SI
SI
SI
IN
IN
SI
SI
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TEMP
Features:
u Complete Output Power
Circuit
u Gate Drive Circuit
NC
N
W
V
U
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
P
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.33±0.04
110.0±1.0
S
0.67
17.0
B
3.74±0.02
95.0±0.5
T
0.52
13.2
C
3.50±0.04
89.0±1.0
U
0.39
10.0
D
3.27
83.0
V
0.27
7.0
E
2.91±0.02
74.0±0.5
W
0.30
7.5
F
2.44
62.0
X
0.24
6.0
G
1.28
32.6
Y
0.24 Rad.
Rad. 6.0
H
1.24
31.6
Z
0.22 Dia.
Dia. 5.5
M5
J
1.02
26.0
AA
Metric M5
K
0.94
24.0
AB
0.127
3.22
22.0 +1.5/-0.0
AC
0.10
2.6
20.0
AD
0.08
2.0
L
M
0.87 +0.06/-0
0.79
N
0.76
19.4
AE
0.07
1.8
P
0.75
19.0
AF
0.06
1.6
Q
0.708
17.98
AG
0.02±0.01
0.5±0.3
R
0.670
17.02
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM75CSA120 is a 1200V,
75 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
75
120
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M5 Mounting Screws
—
1.47 ~ 1.96
N·m
Mounting Torque, M5 Main Terminal Screws
—
1.47 ~ 1.96
N·m
Module Weight (Typical)
—
550
Grams
Power Device Junction Temperature
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part)
VCC(prot.)
800
Volts
Viso
2500
Vrms
Supply Voltage (Applied between VUP1-VUPC , VVP1 -VVPC, VWP1-VWPC, VN1 -VNC)
VD
20
Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, U N · VN · WN-VNC)
VCIN
20
Volts
Fault Output Supply Voltage (Applied between UFO-VUPC , VFO-V VPC, WFO-V WPC, FO-VNC)
VFO
20
Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal)
I FO
20
mA
VCES
1200
Volts
IC
75
Amperes
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Control Sector
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
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Peak Collector Current, (TC = 25°C)
I CP
150
Amperes
Supply Voltage (Applied between P - N)
VCC
900
Volts
VCC(surge)
1000
Volts
PC
500
Watts
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
OC
105
170
—
Amperes
SC
-20°C ≤ T ≤ 125°C, VD = 15V
-20°C ≤ T ≤ 125°C, VD = 15V
—
250
—
Amperes
t off(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
111
118
125
°C
OTr
Reset Level
—
100
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UVr
Reset Level
—
12.5
—
Volts
Applied between VUP1-VUPC ,
13.5
15
16.5
Volts
Control Sector
Over Current Trip Level Inverter Part
Short Circuit Trip Level Inverter Part
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
Supply Voltage
VD
VVP1 -VVPC, VWP1-VWPC, VN1 -VNC
Circuit Current
ID
VD = 15V, VCIN = 15V, VN1-V NC
—
40
55
mA
VD = 15V, VCIN = 15V, VXP1-VXPC
—
13
18
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC, VP-VVPC, WP-VWPC ,
UN · VN · WN -VNC
1.7
2.0
2.3
Volts
PWM Input Frequency
f PWM
3-φ Sinusoidal
—
15
20
kHz
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
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Minimum Fault Output Pulse Width
IFO(L)
VD = 15V, VFO = 15V
—
10
15
mA
tFO
VD = 15V
1.0
1.8
—
ms
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
Diode Forward Voltage
VEC
-IC = 75A, VD = 15V, VCIN = 0V
—
2.5
3.5
Volts
IGBT Inverter Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 15V, I C = 75A
—
2.5
3.5
Volts
VD = 15V, VCIN = 15V, I C = 75A,
—
2.2
3.2
Volts
0.5
1.0
2.5
µs
Tj = 125°C
Inductive Load Switching Times
t on
trr
VD = 15V, VCIN = 0 ↔ 15V
—
0.15
0.3
µs
t C(on)
VCC = 600V, IC = 75A
—
0.4
1.0
µs
t off
Tj = 125°C
—
2.5
3.5
µs
—
0.7
1.2
µs
Min.
Typ.
Max.
Units
t C(off)
Thermal Characteristics
Characteristic
Symbol
Condition
Junction to Case Thermal Resistance
Rth(j-c)Q
Each IGBT
—
—
0.25
°C/Watt
Rth(j-c)F
Each FWDi
—
—
0.51
°C/Watt
0.027
°C/Watt
Value
Units
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Contact Thermal Resistance
R th(c-f)
Case to Fin Per Module,
—
—
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 800
Volts
VD
Applied between V UP1-VUPC,
15 ± 1.5
Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP-VUPC, VP-VVPC, W P-VWPC,
4.0 ~ VD
Volts
UN · VN · W N-VNC
PWM nput Frequency
fPWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
t dead
Input Signal
≥ 3.0
µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
150
3.0
3
2
1
0
2.5
2.0
1.5
1.0
IC = 75A
VCIN = 0V
Tj = 25oC
Tj = 125oC
0.5
0
0
50
100
150
150
150
15
100
VD = 17V
13
75
50
25
0
0
12
14
16
18
20
0
1
2
3
4
5
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
101
101
100
VCC = 600V
VD = 15V
toff
REVERSE RECOVERY TIME, trr, (µs)
SWITCHING TIMES, tc(on), tc(off), (µs)
Tj = 25oC
Tj = 125oC
102
VCC = 600V
VD = 15V
VCC = 600V
VD = 15V
Inductive Load
Inductive Load
Tj = 25oC
Tj = 125oC
Inductive Load
Tj = 25oC
Tj = 125oC
Irr
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100
ton
101
tc(off)
tc(on)
10-1
100
102
101
trr
10-1
10-2
100
102
101
100
102
101
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISITCS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
103
140
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
102
101
100
0.4
100
140
Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
10-1
100
OVER CURRENT TRIP LEVEL % (NORMALIZED)
SWITCHING TIMES, ton, toff, (µs)
VCIN = 0V
125
120
100
80
60
0
0.8
1.2
1.6
2.0
2.4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
2.8
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
4
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
Tj = 25oC
Tj = 125oC
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
5
OUTPUT CHARACTERISTICS
(TYPICAL)
VD = 15V
120
100
80
60
0
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM75CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
VD = 15V
UVt
UVr
14
120
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
140
100
80
13
12
11
60
0
0
-50
0
50
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
150
o
-50
0
50
100
o
JUNCTION TEMPERATURE, Tj, ( C)
JUNCTION TEMPERATURE, Tj, ( C)
150
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.25oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
100
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10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.51oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000