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MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
A
D
X (15 TYP.)
R
123 4
H
R
R
N
5678
9
11
10 12
1. V UPC
2. U FO
3. U P
4. V UPI
5. V VPC
6. V FO
7. V P
8. V VPI
9. V WPC
10. WFO
11. WP
12. V WPI
13. V NC
13 15 17 19
14 16 18
T - DIA.
(2 TYP.) G F
J
S
20
21
P
22
P
M
23
P
24
25
P
P
E
14. V NI
15. B R
16. U N
17. V N
18. W N
19. F O
20. P
21. B
22. N
23. U
24. V
25. W
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
C
B
Y
2.0 X 0.5 MM PIN
(6 TYP.)
U
0.8 X 0.4 MM PIN
(19 TYP.)
V
K
K
W
Q
L
Features:
u Complete Output Power
Circuit
B
W
V UPC
UP
U FO
V UPI
u Gate Drive Circuit
OUT V CC
IN
FO
SI
GND GND
OUT V CC
FO
IN
V VPC
VP
V FO
V VPI
V
SI
GND GND
OUT V CC
FO
V WPC
WP
WFO
V WPI
OUN
IN
UN
S UN
N
TB
SI
VN
VN
OVN
TC
GND
GND GND
WN
WN
UN
FO
FO
S VN
V N1
V CC
OWN
VNC
GND
S WN
IN
FO
OUT V CC
SI
GND GND
BR
www.BDTIC.com/MITSUBISHI
U
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
P
Outline Drawing and Circuit Diagram
Dimensions
Dimensions
Inches
Millimeters
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Inches
Millimeters
A
3.86±0.04
98.0±1.0
N
0.512
13.02
B
3.42±0.02
87.0±0.5
P
0.450±0.012
11.43±0.3
C
2.99
76.0
Q
0.31±0.02
8.0±0.5
D
2.400±0.03
60.96±0.8
R
0.300
E
2.250±0.03
57.15±0.8
S
0.24 Rad.
Rad. 6.0
F
2.20±0.04
56.0±1.0
T
0.22 Dia.
Dia. 5.5
G
1.77±0.03
45.0±0.8
U
0.16
4.0
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM30RSF060 is a 600V,
30 Ampere Intelligent Power Module.
H
1.14
29.0
V
0.14
3.5
Type
J
0.83
21.0
W
0.12±0.02
3.0±0.5
K
0.69
17.5
X
0.100±0.012
2.54±0.3
L
0.71±0.04
18.0±1.0
Y
0.04
1.0
M
0.588
14.925
7.62
PM
Current Rating
Amperes
VCES
Volts (x 10)
30
60
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M5 Mounting Screws
—
1.47 ~ 1.96
N·m
Power Device Junction Temperature
Module Weight (Typical)
Supply Voltage Protected by OC and SC (V D = 13.5 - 16.5V, Inverter Part, Tj = 125°C)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
80
Grams
VCC(prot.)
—
400
Volts
Viso
2500
Vrms
Control Sector
Supply Voltage (Applied between VUP1-VUPC , VVP1-VVPC, VWP1-VWPC, VN1-VNC)
Input Voltage (Applied between U P-VUPC , VP-VVPC, WP-VWPC, UN · VN · WN-VNC)
Fault Output Supply Voltage (Applied between U FO-VUPC, VFO-V VPC, WFO-VWPC , FO-V NC)
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal)
VD
20
Volts
VCIN
20
Volts
VFO
20
Volts
I FO
20
mA
VCES
600
Volts
IC
30
Amperes
I CP
60
Amperes
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, ±
Peak Collector Current, ±
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Supply Voltage (Applied between P - N)
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
VCC
450
Volts
VCC(surge)
500
Volts
PC
83
Watts
VCES
600
Volts
Brake Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
Supply Voltage (Applied between P - N)
IC
10
Amperes
I CP
20
Amperes
VCC
450
Volts
VCC(surge)
500
Volts
Collector Dissipation
PC
39
Watts
Diode Forward Current
IF
10
Amperes
VR(DC)
600
Volts
Supply Voltage, Surge (Applied between P - N)
Diode DC Reverse Voltage
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
39
53
—
Amperes
12
18
—
Amperes
—
80
—
Amperes
Control Sector
Over Current Trip Level Inverter Part
OC
-20°C ≤ T ≤ 125°C, VD = 15V
SC
-20°C ≤ T ≤ 125°C, VD = 15V
—
27
—
Amperes
toff(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
100
110
120
°C
OTr
Reset Level
—
90
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UVr
Reset Level
—
12.5
—
Volts
Applied between V UP1-VUPC,
13.5
15
16.5
Volts
Over Current Trip Level Brake Part
Short Circuit Trip Level Inverter Part
Short Circuit Trip Level Brake Part
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
Supply Voltage
VD
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current
ID
VD = 15V, VCIN = 15V, VN1 -VNC
—
25
30
mA
VD = 15V, VCIN = 15V, VXP1 -VXPC
—
7
10
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC, VP-VVPC, W P-VWPC,
1.7
2.0
2.3
Volts
UN · VN · WN · Br-V NC
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PWM Input Frequency
fPWM
3-φ Sinusoidal
—
Fault Output Current
I FO(H)
VD = 15V, VFO = 15V
I FO(L)
VD = 15V, VFO = 15V
t FO
VD = 15V
Minimum Fault Output Pulse Width
15
20
kHz
—
—
0.01
mA
—
10
15
mA
1.0
1.8
—
ms
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
Diode Forward Voltage
VEC
-IC = 30A, VD = 15V, VCIN = 15V
—
2.5
3.5
Volts
IGBT Inverter Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, IC = 30A
—
1.8
2.5
Volts
VD = 15V, VCIN = 0V, IC = 30A,
—
1.9
2.6
Volts
0.3
0.6
1.5
µs
Tj = 125°C
Inductive Load Switching Times
t on
t rr
VD = 15V, VCIN = 0 ↔ 15V
—
0.12
0.3
µs
t C(on)
VCC = 300V, IC = 30A
—
0.3
1.0
µs
t off
Tj = 125°C
—
2.0
2.8
µs
—
0.6
1.5
µs
—
2.6
3.5
Volts
—
2.9
4.0
Volts
t C(off)
Brake Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, IC = 10A,
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 10A,
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Tj = 125°C
Diode Forward Voltage
VFM
Collector Cutoff Current
ICES
IF = 10A
—
1.5
2.5
Volts
VCE = VCES, Tj = 25°C
—
VCE = VCES, Tj = 125°C
—
—
1
mA
—
10
mA
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
Thermal Characteristics
Characteristic
Symbol
Junction to Case Thermal Resistance
R th(j-c)Q
Each Inverter IGBT
—
—
1.5
°C/Watt
Rth(j-c)F
Each Inverter FWDi
—
—
3.0
°C/Watt
Rth(j-c)Q
Brake IGBT
—
—
3.2
°C/Watt
Rth(j-c)F
Brake FWDi
—
—
4.5
°C/Watt
R th(c-f)
Case to Fin Per Module,
—
—
0.067 °C/Watt
Contact Thermal Resistance
Condition
Min.
Typ.
Max.
Units
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Supply Voltage
VCC
VD
Condition
Value
Units
Applied across P-N Terminals
0 ~ 400
Volts
Applied between VUP1-VUPC ,
15 ± 1.5
Volts
VN1 -VNC, VVP1-VVPC, VWP1 -VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP-V UPC, V P-V VPC, WP-VWPC,
4.0 ~ VD
Volts
PWM Input Frequency
fPWM
UN · VN · W N · Br-V NC
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
Input Signal
≥ 2.5
µs
www.BDTIC.com/MITSUBISHI
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
40
3.0
Tj = 25oC
Tj = 125oC
4
3
2
1
0
IC = 30A
VCIN = 0V
Tj = 25oC
Tj = 125oC
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 0V
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
2.0
1.0
10
20
30
40
Tj = 25oC
VCIN = 0V
15
30
13
VD = 17V
20
10
0
0
0
0
12
14
16
18
0.5
0
20
1.5
1.0
2.0
2.5
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
101
102
101
VCC = 300V
VD = 15V
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
SATURATION VOLTAGE VCE(sat), (VOLTS)
5
VCC = 300V
VC = 15V
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VCC = 300V
VD = 15V
SWITCHING TIMES, tc(on), tc(off), (µs)
Inductive Load
SWITCHING TIMES, ton, toff, (µs)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
Tj = 25oC
Tj = 125oC
toff
100
ton
Inductive Load
Tj = 25oC
Tj = 125oC
100
tc(off)
tc(on)
10-1
100
101
10-1
100
102
101
101
102
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
110
OVER CURRENT TRIP LEVEL % (NORMALIZED)
101
100
Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
101
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
100
90
80
70
0
0
Tj = 25oC
Tj = 125oC
100
100
102
110
102
Inductive Load
1.0
2.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
3.0
VD = 15V
100
90
80
70
60
0
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
15
2.5
14
2.0
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH, tFO (ms)
VD = 15V
1.5
1.0
.5
UVt
UVr
13
12
11
10
0
0
-50
0
50
100
150
JUNCTION TEMPERATURE, Tj, (oC)
-50
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
0
50
100
JUNCTION TEMPERATURE, TC, (oC)
150
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 1.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
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100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 3.0oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE
Brake Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
4
MAX
4
TYP
3
2
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
1
0
20
MAX
3
TYP
2
VCIN = 0V
IC = 10A
Tj = 25oC
Tj = 125oC
1
0
5
10
15
20
15
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
13
15 MAX
5
12
14
16
18
20
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
DIODE FORWARD CHARACTERISTICS
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
15
VD = 17V
10
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
102
Tj = 25oC
VCIN = 0V
TYP
MAX
0
0
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
0
DIODE FORWARD CURRENT, IF, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
5
OUTPUT CHARACTERISTICS
(TYPICAL)
101
101
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TYP
MAX
101
100
0
0.5
1.0
1.5
2.0
2.5
DIODE FORWARD VOLTAGE, VF, (VOLTS)
3.0
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 3.2oC/W
10-3
10-3
10-2
10-1
TIME, (s)
100
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 4.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
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