Download PM15RSH120

MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
C
D
P
X
Q
S
1234
F
P
P
T
1. V UPC
2. U FO
3. U P
4. V UPI
5. V VPC
6. V FO
7. V P
8. V VPI
9. V WPC
10. WFO
11. WP
12. V WPI
13. V NC
5678
9
Y (15 TYP.)
11
13 15 17 19
10 12
14 16 18
H
G
U (4 TYP.)
P
N
V - DIA.
(4 TYP.)
B
N
M
M
U
V
M
M
W
Z
M
14. V NI
15. B R
16. U N
17. V N
18. WN
19. FO
20. P
21. B
22. N
23. U
24. V
25. W
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
E
2.0 ± 0.1 X 0.5 ± 0.1 MM PIN
(6 TYP.)
J
K
V UPC
UP
U FO
V UPI
V VPC
VP
V FO
V VPI
UN
VN
V NI
V NC
WN
FO
BR
V WPC
WP
W FO
V WPI
0.6 ± 0.1 X 0.4 ± 0.1 MM PIN
(19 TYP.)
W
L
R
AA
Features:
u Complete Output Power
Circuit
B
N
W
V
u Gate Drive Circuit
u Protection Logic
OUT V CC
IN
FO
SI
GND GND
OUT V CC
IN
FO
SI
GND GND
OUT V CC
FO
IN
SI
GND GND
FO
IN
OUT V CC
SI
GND GND
FO
IN
OUT V CC
TEMP
SI
GND GND
OUT V CC
IN
FO
SI
GND GND
OUT V CC
IN
FO
SI
GND GND
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U
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
P
Outline Drawing and Circuit Diagram
Dimensions
A
Inches
Millimeters
Inches
Millimeters
3.98±0.04
101.0±1.0
Dimensions
N
0.41
10.5
B
3.78
96.0
P
0.400
10.16
C
3.48±0.03
88.5±0.8
Q
0.392
9.96
D
2.700±0.03
68.58±0.8
R
0.31
8.0
E
2.66±0.02
67.5±0.5
S
0.26
6.5
F
2.36±0.04
60.0±1.0
T
0.246
G
1.85±0.02
47.0±0.5
U
0.18 Rad.
Rad. 4.5
6.25
H
1.83±0.03
46.5±0.8
V
0.18 Dia.
Dia. 4.5
J
1.28
32.6
W
0.17±0.02
4.4±0.5
K
0.97
24.6
X
0.10
2.5
L
0.71±0.04
18.0±1.0
Y
0.100±0.01
2.54±0.25
M
0.53±0.01
13.5±0.3
Z
0.02
0.5
AA
0.14
3.5
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM15RSH120 is a 1200V,
15 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
15
120
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M4 Mounting Screws
—
0.98 ~ 1.47
N·m
Module Weight (Typical)
—
100
Grams
Power Device Junction Temperature
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C)
VCC(prot.)
800
Volts
Viso
2500
Vrms
VD
20
Volts
Input Voltage (Applied between U P-VUPC , VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC)
VCIN
20
Volts
Fault Output Supply Voltage Applied between (UFO-V UPC, VFO-VVPC, WFO-VWPC, FO-VNC)
VFO
20
Volts
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal)
IFO
20
mA
VCES
1200
Volts
IC
15
Amperes
ICP
30
Amperes
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1 -VWPC, VN1-VNC)
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V)
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
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Supply Voltage (Applied between P - N)
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
VCC
900
Volts
VCC(surge)
1000
Volts
PC
83
Watts
VCES
1200
Volts
IC
10
Amperes
Brake Sector
Collector-Emitter Voltage
Collector Current, (TC = 25°C)
Peak Collector Current, (TC = 25°C)
ICP
20
Amperes
Supply Voltage (Applied between P - N)
VCC
900
Volts
VCC(surge)
1000
Volts
PC
41
Watts
IF
10
Amperes
VR(DC)
1200
Volts
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation
Diode Forward Current
Diode DC Reverse Voltage
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
OC
-20°C ≤ T ≤ 125°C, VD = 15V
Min.
Typ.
Max.
Units
Control Sector
Over Current Trip Level Inverter Part
Over Current Trip Level Brake Part
Short Circuit Trip Level Inverter Part
SC
-20°C ≤ T ≤ 125°C, VD = 15V
Short Circuit Trip Level Brake Part
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
22
37
—
Amperes
15
27
—
Amperes
—
56
—
Amperes
—
41
—
Amperes
t off(OC)
VD = 15V
—
10
—
µs
OT
Trip Level
100
110
120
°C
OTr
Reset Level
—
90
—
°C
UV
Trip Level
11.5
12.0
12.5
Volts
UV r
Reset Level
—
12.5
—
Volts
Supply Voltage
VD
Applied between VUP1-VUPC,
13.5
15
16.5
Volts
Circuit Current
ID
—
25
35
mA
VVP1-VVPC, VWP1-VWPC, VN1-VNC
VD = 15V, VCIN = 15V, VN1-VNC
VD = 15V, VCIN = 15V, VXP1-VXPC
—
7
10
mA
Input ON Threshold Voltage
Vth(on)
Applied between
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
Vth(off)
UP-VUPC , VP-VVPC, WP-VWPC,
1.7
2.0
2.3
Volts
UN · VN · WN · Br-VNC
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PWM Input Frequency
f PWM
3-φ Sinusoidal
—
15
20
kHz
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
IFO(L)
VD = 15V, VFO = 15V
—
10
15
mA
tFO
VD = 15V
1.0
1.8
—
ms
Minimum Fault Output Pulse Width
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Collector Cutoff Current
Emitter-Collector Voltage
Collector-Emitter Saturation Voltage
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
VEC
-IC = 15A, VD = 15V, VCIN = 5V
—
2.5
3.5
Volts
VCE(sat)
VD = 15V, VCIN = 0V, I C = 15A
—
2.3
3.3
Volts
VD = 15V, VCIN = 0V, I C = 15A,
—
2.1
3.1
Volts
Tj = 125°C
Inductive Load Switching Times
0.4
0.7
1.5
µs
trr
VD = 15V, VCIN = 0 ↔ 15V
—
0.15
0.3
µs
tC(on)
VCC = 600V, I C = 15A
—
0.3
1.0
µs
toff
Tj = 125°C
—
1.7
2.9
µs
—
0.7
1.3
µs
—
2.8
3.8
Volts
—
2.5
3.5
Volts
ton
tC(off)
Brake Sector
Collector-Emitter Saturation Voltage
VCE(sat)
VD = 15V, VCIN = 0V, I C = 10A,
Tj = 25°C
VD = 15V, VCIN = 0V, I C = 10A,
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Tj = 125°C
Diode Forward Voltage
VFM
Collector Cutoff Current
ICES
I F = 10A, VD = 15V, VCIN = 5V
—
2.5
3.5
Volts
VCE = VCES, Tj = 25°C
—
—
1
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each Inverter IGBT
—
—
1.5
°C/Watt
Rth(j-c)F
Each Inverter FWDi
—
—
4.5
°C/Watt
Rth(c-f)Q
Each Brake IGBT
—
—
3.0
°C/Watt
Rth(c-f)F
Each Brake FWDi
—
—
5.5
°C/Watt
Rth(c-f)
Case to Fin Per Module,
—
—
0.044
°C/Watt
Contact Thermal Resistance
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Value
Units
Supply Voltage
VCC
Applied across P-N Terminals
0 ~ 800
Volts
Applied between VUP1-VUPC ,
15 ± 1.5
Volts
VD
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage
VCIN(on)
Applied between
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
UP, VP, WP, UN, VN, WN, Br
4.0 ~ VD
Volts
PWM Input Frequency
fPWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
≥ 2.5
µs
Input Signal
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Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1.5
1.0
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
0.5
2.5
2.0
1.5
1.0
IC = 15A
VCIN = 0V
Tj = 25oC
Tj = 125oC
0.5
0
0
5
10
15
20
VD = 17V
15
13
10
0
0
25
Tj = 25oC
VCIN = 0V
12
14
16
18
20
0
1.0
2.0
3.0
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
101
101
103
102
VCC = 600V
VD = 15V
VCC = 600V
VD = 15V
VCC = 600V
VD = 15V
Inductive Load
Inductive Load
Inductive Load
toff
100
ton
10-1
100
101
Tj = 25oC
Tj = 125oC
100
tc(off)
tc(on)
10-1
100
102
REVERSE RECOVERY TIME, trr, (µs)
SWITCHING TIMES, tc(on), tc(off), (µs)
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Tj = 25oC
Tj = 125oC
101
Irr
100
102
101
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
101
100
120
Tj = 25oC
OVER CURRENT TRIP LEVEL % (NORMALIZED)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
101
COLLECTOR CURRENT, IC, (AMPERES)
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
120
100
80
60
0
0
trr
102
101
100
102
140
102
Tj = 25oC
Tj = 125oC
1
2
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
3
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2.0
COLLECTOR CURRENT, IC, (AMPERES)
2.5
0
SWITCHING TIMES, ton, toff, (µs)
20
3.0
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS
(TYPICAL)
VD = 15V
110
100
90
80
0
0
12
14
16
18
SUPPLY VOLTAGE, VD, (VOLTS)
20
-20
0
20
60
100
140
JUNCTION TEMPERATURE, Tj, (oC)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Inverter Part
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
2.5
15
UVt
UVr
14
2.0
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
FAULT OUTPUT PULSE WIDTH, tfo, (ms)
VD = 15V
1.5
1.0
13
12
11
0
0
-50
0
50
100
150
-50
0
50
100
JUNCTION TEMPERATURE, Tj, (oC)
JUNCTION TEMPERATURE, Tj, (oC)
10-3
150
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 1.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
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100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 4.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE
Brake Part
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
5
4
3
2
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
1
0
10
4
3
2
1
Tj = 25oC
VCIN = 0V
IC = 10A
0
0
2
4
6
8
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
10
Tj = 25oC
VCIN = 0V
VD = 17V
15
13
8
6
4
2
0
0
12
14
16
18
20
0
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
DIODE FORWARD CHARACTERISTICS
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
VD = 15V
VCIN = 15V
Tj = 25oC
Tj = 125oC
101
100
0
0.5
1.0
1.5
2.0
2.5
DIODE FORWARD VOLTAGE, VF, (VOLTS)
3.0
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
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102
DIODE FORWARD CURRENT, IF, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 3.0oC/W
10-3
10-3
10-2
10-1
TIME, (s)
100
101
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 5.5oC/W
10-3
10-3
10-2
10-1
100
101
TIME, (s)
Sep.2000