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RRL035P03 Pch -30V -3.5A Power MOSFET Datasheet lOutline VDSS -30V RDS(on) (Max.) 50mW ID -3.5A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). 4) Pb-free lead plating ; RoHS compliant Drain Drain Gate Source Drain Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) lApplication DC/DC converters Type 180 Tape width (mm) Basic ordering unit (pcs) 8 3,000 Taping code TR Marking UF lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS -30 V Continuous drain current ID *1 3.5 A ID,pulse *2 14 A VGSS 20 V PD *3 1.0 W PD *4 0.32 W Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.09 - Rev.B Data Sheet RRL035P03 lThermal resistance Parameter Symbol Thermal resistance, junction - ambient Values Unit Min. Typ. Max. RthJA *3 - - 125 °C/W RthJA *4 - - 391 °C/W lElectrical characteristics(Ta = 25°C) Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = -1mA ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C Values Unit Min. Typ. Max. -30 - - V - -25 - mV/°C Zero gate voltage drain current IDSS VDS = -30V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = -10V, ID = -1mA -1.0 - -2.5 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID=b -1mA referenced to 25°C - 3.9 - mV/°C VGS= -10V, ID= -3.5A - 36 50 VGS= -4.5V, ID= -1.7A - 52 72 VGS= -4.0V, ID= -1.7A - 58 81 VGS= -10V, ID= -3.5A, Tj=125°C - 52 73 RG f = 1MHz, open drain - 19 - W gfs *5 VDS= -10V, ID= -3.5A 2.3 6.5 - S Static drain - source on - state resistance Gate input resistannce Transconductance RDS(on) *5 mW *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30×30×0.8mm) *4 Mounted on a FR4 (15×20×0.8mm) *5 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/11 2012.09 - Rev.B Data Sheet RRL035P03 lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 800 - Output capacitance Coss VDS = -10V - 120 - Reverse transfer capacitance Crss f = 1MHz - 110 - VDD ⋍ -15V, VGS = -10V - 7 - tr *5 ID = -1.7A - 9 - td(off) *5 RL = 8.8W - 75 - tf *5 RG = 10W - 40 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *5 Unit pF ns lGate Charge characteristics(Ta = 25°C) Parameter Total gate charge Symbol Qg *5 Gate - Source charge Qgs *5 Gate - Drain charge Qgd *5 Conditions Values Min. Typ. Max. VDD ⋍ -15V, ID= -3.5A VGS = -5V - 8.0 - VDD ⋍ -15V, ID= -3.5A VGS = -10V - 14 - - 2.5 - - 3.0 - VDD ⋍ -15V, ID= -3.5A VGS = -5V Unit nC lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *5 Conditions Values Unit Min. Typ. Max. Ta = 25°C - - -0.8 A VGS = 0V, Is = -3.5A - - -1.2 V 3/11 2012.09 - Rev.B Data Sheet RRL035P03 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 Operation in this area is limited by RDS(on) (VGS = -10V) 100 80 60 40 20 0 0 50 100 150 1 PW = 1ms DC Operation 0.1 0.01 200 PW = 10ms Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Ta=25ºC Single Pulse 1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 bottom Single 0.1 0.001 0.0001 Rth(ch-a)=125ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 100 1000 Ta=25ºC Single Pulse 0.01 10 Fig.4 Single Pulse Maxmum Power dissipation 1 Peak Transient Power : P(W) 10 1 Drain - Source Voltage : -VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) PW = 100ms 10 Drain Current : -ID [A] Power Dissipation : PD/PD max. [%] 120 10 1 0.0001 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 100 0.01 1 100 Pulse Width : PW [s] 4/11 2012.09 - Rev.B Data Sheet RRL035P03 lElectrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) 10 10 VGS= -10.0V VGS= -10.0V VGS= -4.0V 6 4 VGS= -3.0V 2 VGS= -2.5V 0 0 0.2 0.4 0.6 VGS= -3.5V 8 VGS= -3.5V Drain Current : -ID [A] Drain Current : -ID [A] 8 VGS= -4.5V VGS= -4.5V 6 VGS= -3.0V VGS= -4.0V 4 VGS= -2.5V 2 Ta=25ºC Pulsed 0.8 0 1 Ta=25ºC Pulsed 0 6 8 10 Fig.8 Typical Transfer Characteristics Fig.7 Breakdown Voltage vs. Junction Temperature 10 60 VDS= -10V Pulsed VGS = 0V ID = -1mA Pulsed 1 Drain Current : -ID [A] Drain - Source Breakdown Voltage : -V(BR)DSS [V] 4 Drain - Source Voltage : -VDS [V] Drain - Source Voltage : -VDS [V] 40 20 0 2 -50 0 50 100 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.1 0.01 0.001 150 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0 1 2 3 Gate - Source Voltage : -VGS [V] 5/11 2012.09 - Rev.B Data Sheet RRL035P03 lElectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 10 VDS= -10V Pulsed VDS = -10V ID = -1mA Pulsed Transconductance : gfs [S] Gate Threshold Voltage : -VGS(th) [V] 3 2 1 0 -50 0 50 100 1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 150 Junction Temperature : Tj [°C] 10 Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 200 1 0.8 0.6 0.4 0.2 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [mW] 1.2 Drain Current Dissipation : ID/ID max. (%) 1 Drain Current : -ID [A] Fig.11 Drain CurrentDerating Curve 0 0.1 150 ID = -1.7A ID = -3.5A 100 50 0 0 5 10 15 Gate - Source Voltage : -VGS [V] Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ta=25ºC Pulsed 6/11 2012.09 - Rev.B Data Sheet RRL035P03 lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 60 Ta=25ºC Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 100 10 1 0.1 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 1000 40 20 VGS = -10V ID = -3.5A Pulsed 0 -50 -25 Drain Current : -ID [A] 75 100 125 150 Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 10 0.1 50 1000 VGS= -10V Pulsed 100 1 25 Junction Temperature : Tj [ºC] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) 1000 0 Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. VGS= -4.5V Pulsed Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 10 1 0.1 1 10 Drain Current : -ID [A] 7/11 2012.09 - Rev.B Data Sheet RRL035P03 lElectrical characteristic curves Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Fig.18 Typical Capacitance vs. Drain - Source Voltage 10000 VGS= -4.0V Pulsed Ta = 25ºC f = 1MHz VGS = 0V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 Capacitance : C [pF] Static Drain - Source On-State Resistance : RDS(on) [mW] 1000 10 1 0.1 1 Coss 100 Crss 10 10 Ciss 1000 0.01 Drain Current : -ID [A] tf 9 100 td(on) 10 1 tr 0.01 0.1 1 8 7 6 5 4 3 Ta=25ºC VDD= -15V ID= -3.5A RG=10W Pulsed 2 1 0 10 Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 100 10 Ta=25ºC VDD= -15V VGS= -10V RG=10W Pulsed td(off) 10 Fig.20 Dynamic Input Characteristics Gate - Source Voltage : -VGS [V] Switching Time : t [ns] 1000 1 Drain - Source Voltage : -VDS [V] Fig.19 Switching Characteristics 10000 0.1 0 5 10 15 Total Gate Charge : Qg [nC] 8/11 2012.09 - Rev.B Data Sheet RRL035P03 lElectrical characteristic curves Fig.21 Source Current vs. Source Drain Voltage 10 Source Current : -IS [A] VGS=0V Pulsed 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 0 0.5 1 1.5 Source-Drain Voltage : -VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/11 2012.09 - Rev.B Data Sheet RRL035P03 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/11 2012.09 - Rev.B Data Sheet RRL035P03 lDimensions (Unit : mm) D A e x S A Lp HE E L TUMT6 b c e1 A A2 e A1 l1 y S S b2 Patterm of terminal position areas DIM A A1 A2 b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.85 0.00 0.10 0.72 0.82 0.25 0.40 0.12 0.22 1.90 2.10 1.60 1.80 0.65 2.00 2.20 0.20 0.40 0.10 0.10 MILIMETERS MIN MAX 1.70 0.50 0.50 INCHES MIN 0 0.028 0.01 0.005 0.075 0.063 MAX 0.033 0.004 0.032 0.016 0.009 0.083 0.071 0.03 0.079 0.087 0.01 - 0.016 0.004 0.004 INCHES MIN MAX 0.067 - 0.02 0.02 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/11 2012.09 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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