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RRL035P03
Pch -30V -3.5A Power MOSFET
Datasheet
lOutline
VDSS
-30V
RDS(on) (Max.)
50mW
ID
-3.5A
PD
1.0W
lFeatures
(6)
TUMT6
(5)
(4)
(1)
(2)
(3)
lInner circuit
1) Low on - resistance.
(1)
(2)
(3)
(4)
(5)
(6)
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
4) Pb-free lead plating ; RoHS compliant
Drain
Drain
Gate
Source
Drain
Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
DC/DC converters
Type
180
Tape width (mm)
Basic ordering unit (pcs)
8
3,000
Taping code
TR
Marking
UF
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30
V
Continuous drain current
ID *1
3.5
A
ID,pulse *2
14
A
VGSS
20
V
PD *3
1.0
W
PD *4
0.32
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lThermal resistance
Parameter
Symbol
Thermal resistance, junction - ambient
Values
Unit
Min.
Typ.
Max.
RthJA *3
-
-
125
°C/W
RthJA *4
-
-
391
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = -1mA
ΔV(BR)DSS ID= -1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
-30
-
-
V
-
-25
-
mV/°C
Zero gate voltage drain current
IDSS
VDS = -30V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = -10V, ID = -1mA
-1.0
-
-2.5
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID=b -1mA
referenced to 25°C
-
3.9
-
mV/°C
VGS= -10V, ID= -3.5A
-
36
50
VGS= -4.5V, ID= -1.7A
-
52
72
VGS= -4.0V, ID= -1.7A
-
58
81
VGS= -10V, ID= -3.5A, Tj=125°C
-
52
73
RG
f = 1MHz, open drain
-
19
-
W
gfs *5
VDS= -10V, ID= -3.5A
2.3
6.5
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
*5
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
800
-
Output capacitance
Coss
VDS = -10V
-
120
-
Reverse transfer capacitance
Crss
f = 1MHz
-
110
-
VDD ⋍ -15V, VGS = -10V
-
7
-
tr *5
ID = -1.7A
-
9
-
td(off) *5
RL = 8.8W
-
75
-
tf *5
RG = 10W
-
40
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *5
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *5
Gate - Source charge
Qgs *5
Gate - Drain charge
Qgd *5
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ -15V, ID= -3.5A
VGS = -5V
-
8.0
-
VDD ⋍ -15V, ID= -3.5A
VGS = -10V
-
14
-
-
2.5
-
-
3.0
-
VDD ⋍ -15V, ID= -3.5A
VGS = -5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
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© 2012 ROHM Co., Ltd. All rights reserved.
Symbol
IS *1
VSD *5
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
-0.8
A
VGS = 0V, Is = -3.5A
-
-
-1.2
V
3/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
Operation in this area
is limited by RDS(on)
(VGS = -10V)
100
80
60
40
20
0
0
50
100
150
1
PW = 1ms
DC Operation
0.1
0.01
200
PW = 10ms
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Ta=25ºC
Single Pulse
1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
0.1
0.001
0.0001
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
100
1000
Ta=25ºC
Single Pulse
0.01
10
Fig.4 Single Pulse Maxmum Power
dissipation
1
Peak Transient Power : P(W)
10
1
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
PW = 100ms
10
Drain Current : -ID [A]
Power Dissipation : PD/PD max. [%]
120
10
1
0.0001
100
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
100
0.01
1
100
Pulse Width : PW [s]
4/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
10
10
VGS= -10.0V
VGS= -10.0V
VGS= -4.0V
6
4
VGS= -3.0V
2
VGS= -2.5V
0
0
0.2
0.4
0.6
VGS= -3.5V
8
VGS= -3.5V
Drain Current : -ID [A]
Drain Current : -ID [A]
8
VGS= -4.5V
VGS= -4.5V
6
VGS= -3.0V
VGS= -4.0V
4
VGS= -2.5V
2
Ta=25ºC
Pulsed
0.8
0
1
Ta=25ºC
Pulsed
0
6
8
10
Fig.8 Typical Transfer Characteristics
Fig.7 Breakdown Voltage
vs. Junction Temperature
10
60
VDS= -10V
Pulsed
VGS = 0V
ID = -1mA
Pulsed
1
Drain Current : -ID [A]
Drain - Source Breakdown Voltage : -V(BR)DSS [V]
4
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
40
20
0
2
-50
0
50
100
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
0.1
0.01
0.001
150
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0
1
2
3
Gate - Source Voltage : -VGS [V]
5/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lElectrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
10
VDS= -10V
Pulsed
VDS = -10V
ID = -1mA
Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : -VGS(th) [V]
3
2
1
0
-50
0
50
100
1
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
150
Junction Temperature : Tj [°C]
10
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
200
1
0.8
0.6
0.4
0.2
-25
0
25
50
75
100
125
150
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1.2
Drain Current Dissipation
: ID/ID max. (%)
1
Drain Current : -ID [A]
Fig.11 Drain CurrentDerating Curve
0
0.1
150
ID = -1.7A
ID = -3.5A
100
50
0
0
5
10
15
Gate - Source Voltage : -VGS [V]
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
Ta=25ºC
Pulsed
6/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
60
Ta=25ºC
Pulsed
VGS= -4.0V
VGS= -4.5V
VGS= -10V
100
10
1
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
40
20
VGS = -10V
ID = -3.5A
Pulsed
0
-50 -25
Drain Current : -ID [A]
75
100 125 150
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10
0.1
50
1000
VGS= -10V
Pulsed
100
1
25
Junction Temperature : Tj [ºC]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
1000
0
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
VGS= -4.5V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
10
1
0.1
1
10
Drain Current : -ID [A]
7/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lElectrical characteristic curves
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
10000
VGS= -4.0V
Pulsed
Ta = 25ºC
f = 1MHz
VGS = 0V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
Capacitance : C [pF]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
10
1
0.1
1
Coss
100
Crss
10
10
Ciss
1000
0.01
Drain Current : -ID [A]
tf
9
100
td(on)
10
1
tr
0.01
0.1
1
8
7
6
5
4
3
Ta=25ºC
VDD= -15V
ID= -3.5A
RG=10W
Pulsed
2
1
0
10
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
100
10
Ta=25ºC
VDD= -15V
VGS= -10V
RG=10W
Pulsed
td(off)
10
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : -VGS [V]
Switching Time : t [ns]
1000
1
Drain - Source Voltage : -VDS [V]
Fig.19 Switching Characteristics
10000
0.1
0
5
10
15
Total Gate Charge : Qg [nC]
8/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lElectrical characteristic curves
Fig.21 Source Current
vs. Source Drain Voltage
10
Source Current : -IS [A]
VGS=0V
Pulsed
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0
0.5
1
1.5
Source-Drain Voltage : -VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
9/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.09 - Rev.B
Data Sheet
RRL035P03
lDimensions (Unit : mm)
D
A
e
x
S A
Lp
HE
E
L
TUMT6
b
c
e1
A
A2
e
A1
l1
y S
S
b2
Patterm of terminal position areas
DIM
A
A1
A2
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.85
0.00
0.10
0.72
0.82
0.25
0.40
0.12
0.22
1.90
2.10
1.60
1.80
0.65
2.00
2.20
0.20
0.40
0.10
0.10
MILIMETERS
MIN
MAX
1.70
0.50
0.50
INCHES
MIN
0
0.028
0.01
0.005
0.075
0.063
MAX
0.033
0.004
0.032
0.016
0.009
0.083
0.071
0.03
0.079
0.087
0.01
-
0.016
0.004
0.004
INCHES
MIN
MAX
0.067
-
0.02
0.02
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.09 - Rev.B
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A
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