Download RZM001P02

RZM001P02
Pch -20V -100mA Small Signal MOSFET
Datasheet
lOutline
VDSS
-20V
RDS(on) (Max.)
3.8W
ID
-100mA
PD
150mW
lFeatures
(3)
VMT3
(1)
(2)
lInner circuit
1) Low voltage drive(1.2V) makes this
(1) Gate
(2) Source
(3) Drain
device ideal for partable equipment.
2) Drive circuits can be simple.
3) Built-in G-S Protection Diode.
*1 BODY DIODE
*2 ESD PROTECTION DIODE
lPackaging specifications
Packaging
lApplication
Switching
Taping
Reel size (mm)
180
Tape width (mm)
5.5
Type
Basic ordering unit (pcs)
8,000
Taping code
T2L
Marking
RX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20
V
Continuous drain current
ID *1
100
mA
ID,pulse *2
400
mA
Gate - Source voltage
VGSS
10
V
Power dissipation
PD *3
150
mW
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Junction temperature
Range of storage temperature
lThermal resistance
Values
Parameter
Symbol
RthJA *3
Thermal resistance, junction - ambient
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© 2012 ROHM Co., Ltd. All rights reserved.
1/10
Unit
Min.
Typ.
Max.
-
-
833
°C/W
2012.08 - Rev.A
Data Sheet
RZM001P02
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
Conditions
Unit
Min.
Typ.
Max.
V(BR)DSS
VGS = 0V, ID = -1mA
-20
-
-
V
Zero gate voltage drain current
IDSS
VDS = -20V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 8V, VDS = 0V
-
-
10
mA
VDS = -10V, ID = -100uA
-0.3
-
-1.0
V
VGS= -4.5V, ID= -100mA
-
2.5
3.8
VGS= -2.5V, ID= -50mA
-
3.4
5.1
VGS= -1.8V, ID= -20mA
-
4.8
8.2
VGS= -1.5V, ID= -10mA
-
6.0
13.2
VGS= -1.2V, ID= -1mA
-
10.0
40.0
VGS= -4.5V, ID= -100mA, Tj=125°C
-
4.8
6.8
VDS= -10V, ID= -100mA
120
-
-
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
VGS (th)
RDS(on) *4
gfs *4
W
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
15
-
Output capacitance
Coss
VDS = -10V
-
4.0
-
Reverse transfer capacitance
Crss
f = 1MHz
-
1.5
-
VDD ⋍ -10V, VGS = -4.5V
-
46
-
tr *4
ID = -50mA
-
62
-
td(off) *4
RL = 200W
-
325
-
tf *4
RG = 10W
-
137
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4
pF
ns
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Continuous source current
Symbol
IS *1
Pulsed source current
ISM *2
Forward voltage
VSD
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© 2012 ROHM Co., Ltd. All rights reserved.
*4
Conditions
Unit
Min.
Typ.
Max.
-
-
-100
mA
-
-
-400
mA
-
-
-1.2
V
Tc = 25°C
VGS = 0V, Is = -100mA
3/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lElectrical characteristic curves
Fig.2 Drain Current Derating Curve
120
1.2
100
1
Drain Current Dissipation
: ID/ID max. (%)
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
80
60
40
20
0
0.8
0.6
0.4
0.2
0
0
50
100
150
200
-25
Junction Temperature : Tj [°C]
25
50
75
100
125
150
Junction Temperature : Tj [°C]
Fig.3 Typical Output Characteristics(I)
Fig.4 Typical Output Characteristics(II)
0.1
0.1
Ta=25ºC
Pulsed
Ta=25ºC
Pulsed
0.08
0.08
VGS= -1.5V
Drain Current : -ID [A]
Drain Current : -ID [A]
0
0.06
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
VGS= -2.0V
VGS= -1.8V
0.04
0.02
VGS= -1.5V
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
VGS= -2.0V
VGS= -1.8V
0.06
0.04
0.02
VGS= -1.2V
VGS= -1.2V
0
0
0
0.2
0.4
0.6
0.8
0
1
Drain - Source Voltage : -VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
4/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lElectrical characteristic curves
Fig.6 Typical Transfer Characteristics
1
60
VDS= -10V
Pulsed
VGS = 0V
ID = -1mA
pulsed
0.1
Drain Current : -ID [A]
Drain - Source Breakdown Voltage : -V(BR)DSS
[V]
Fig.5 Breakdown Voltage
vs. Junction Temperature
40
20
0.01
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.001
0.0001
0
-50
0
50
100
0
150
1
1.5
2
Gate - Source Voltage : -VGS [V]
Junction Temperature : Tj [°C]
Fig.8 Transconductance vs. Drain Current
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
3
1
VDS= -10V
Pulsed
VDS = -10V
ID = -100uA
pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : -VGS(th) [V]
0.5
2
1
0
50
100
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.01
0
-50
0.1
0.1
1
Drain Current : -ID [A]
5/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lElectrical characteristic curves
Fig.9 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current(I)
100000
Ta=25ºC
Pulsed
8000
ID= -0.1A
4000
2000
0
0
2
4
6
Ta=25ºC
Pulsed
10000
ID= -0.001A
6000
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
10000
8
10
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
1000
100
0.0001
Gate - Source Voltage : -VGS [V]
0.01
0.1
1
Drain Current : -ID [A]
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current(II)
100000
5
Static Drain - Source On-State Resistance
: RDS(on) [W]
6
Static Drain - Source On-State Resistance
: RDS(on) [W]
0.001
VGS = -4.5V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
10000
4
3
2
VGS = -4.5V
ID = -100mA
pulsed
1
0
-50 -25
0
25
50
75
100 125 150
100
0.0001
0.001
0.01
0.1
1
Drain Current : -ID [A]
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
1000
6/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lElectrical characteristic curves
Fig.13 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
100000
VGS = -2.5V
Pulsed
10000
VGS = -1.8V
Pulsed
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
100000
10000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1000
100
0.0001
0.001
0.01
0.1
1
1000
100
0.0001
Drain Current : -ID [A]
10000
100000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.1
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
0.0001
0.001
0.01
0.1
1
Drain Current : -ID [A]
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
VGS = -1.2V
Pulsed
1000
0.001
0.1
10000
1000
100
0.0001
0.01
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(VI)
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
VGS = -1.5V
Pulsed
0.001
Drain Current : -ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(V)
100000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
7/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lElectrical characteristic curves
Fig.18 Switching Characteristics
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
1000
100
Switching Time : t [ns]
Capacitance : C [pF]
10
Coss
1
Crss
Ta=25ºC
VDD= -10V
VGS= -4.5V
RG=10W
Pulsed
td(off)
Ciss
Ta=25ºC
f=1MHz
VGS=0V
tf
100
td(on)
tr
0
10
0.01
0.1
1
10
100
0.01
0.1
1
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.19 Source Current
vs. Source Drain Voltage
1
Source Current : -IS [A]
VGS=0V
Pulsed
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0
0.5
1
1.5
Source-Drain Voltage : -VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
lNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2012 ROHM Co., Ltd. All rights reserved.
9/10
2012.08 - Rev.A
Data Sheet
RZM001P02
lDimensions (Unit : mm)
D
VMT3
c
A
e
b
Lp
H
E
L
b1
x
S A
A1
l1
A
e1
l1
b3
S
e
b2
Patterm of terminal position areas
DIM
A
A1
b
b1
c
D
E
e
HE
L
Lp
x
DIM
e1
b2
b3
l1
MILIMETERS
MIN
MAX
0.45
0.55
0.00
0.10
0.17
0.27
0.27
0.37
0.08
0.18
1.10
1.30
0.70
0.90
0.40
1.10
1.30
0.10
0.30
0.20
0.40
0.10
MILIMETERS
MIN
MAX
0.80
0.37
0.47
0.50
INCHES
MIN
0.018
0
0.007
0.011
0.003
0.043
0.028
MAX
0.022
0.004
0.011
0.015
0.007
0.051
0.035
0.02
0.043
0.004
0.008
-
0.051
0.004
INCHES
MIN
MAX
0.03
-
0.015
0.019
0.02
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
10/10
2012.08 - Rev.A
Notice
Notes
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consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
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Please be sure to implement in your equipment using the Products safety measures to guard
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R1120A