Download RQ1E070RP

RQ1E070RP
Pch -30V -7A Power MOSFET
Datasheet
lOutline
VDSS
-30V
RDS(on) (Max.)
17mW
ID
-7A
PD
1.5W
lFeatures
(8)
(7)
(6)
(5)
TSMT8
(1)
(2)
(3)
(4)
lInner circuit
1) Low on - resistance.
(1) Source
(2) Source
(3) Source
(4) Gate
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
4) Pb-free lead plating ; RoHS compliant
(5) Drain
(6) Drain
(7) Drain
(8) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
DC/DC converters
Type
180
Tape width (mm)
Basic ordering unit (pcs)
8
3,000
Taping code
TR
Marking
UE
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30
V
Continuous drain current
ID *1
7
A
ID,pulse *2
28
A
VGSS
20
V
PD *3
1.5
W
PD *4
0.55
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - ambient
RthJA *3
-
-
83.3
°C/W
Thermal resistance, junction - ambient
RthJA *4
-
-
227
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
-30
-
-
V
-
-25
-
mV/°C
Zero gate voltage drain current
IDSS
VDS = -30V, VGS = 0V
-
-
-1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = -10V, ID = -1mA
-1.0
-
-2.5
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID = 1mA
referenced to 25°C
-
3.9
-
mV/°C
VGS= -10V, ID= -7A
-
12
17
VGS= -4.5V, ID= -3.5A
-
17
24
VGS= -4.0V, ID= -3.5A
-
19
27
VGS= -10V, ID= -7A, Tj=125°C
-
26
37
RG
f = 1MHz, open drain
-
5
-
W
gfs *5
VDS = -10V, ID = -7A
6.0
15
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
*5
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (20×20×0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
2700
-
Output capacitance
Coss
VDS = -10V
-
390
-
Reverse transfer capacitance
Crss
f = 1MHz
-
350
-
VDD ⋍ -15V, VGS = -10V
-
16
-
tr *5
ID = -3.5A
-
35
-
td(off) *5
RL = 4.3W
-
140
-
tf *5
RG = 10W
-
70
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *5
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *5
Gate - Source charge
Qgs *5
Gate - Drain charge
Qgd *5
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ -15V, ID = -7A
VGS = -5V
-
26
-
VDD ⋍ -15V, ID = -7A
VGS = -10V
-
50
-
-
7.5
-
-
8.0
-
VDD ⋍ -15V, ID = -7A
VGS = -5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
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© 2012 ROHM Co., Ltd. All rights reserved.
Symbol
IS *1
VSD *5
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
-1
A
VGS = 0V, Is = -7A
-
-
-1.2
V
3/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
120
100
100
80
60
40
20
0
0
50
100
150
1
DC Operation
0.1
0.01
200
Operation in this area
is limited by RDS(on)
( VGS = -10V )
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
1
10
100
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power dissipation
10
10000
Ta=25ºC
Single Pulse
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
0.1
0.01
0.001
0.0001
Rth(ch-a)=83.3ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
1
Peak Transient Power : P(W)
Normalized Transient Thermal Resistance : r(t)
PW = 100μs
10
Drain Current : -ID [A]
Power Dissipation : PD/PD max. [%]
PW = 10ms PW = 1ms
100
10
1
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
1000
0.1
0.0001
100
Ta=25ºC
Single Pulse
4/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lElectrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
Ta= 25ºC
VGS= -10V
VGS= -4.5V
VGS= -4.0V
4
VGS= -3.0V
VGS= -2.8V
2
VGS= -2.5V
0
0
0.2
0.4
0.6
0.8
Ta= 25ºC
4
VGS= -2.5V
2
0
1
0
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.0V
VGS= -2.8V
6
Drain Current : -ID [A]
Drain Current : -ID [A]
6
5/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
Fig.7 Breakdown Voltage
vs. Junction Temperature
Fig.8 Typical Transfer Characteristics
10
60
VGS=0V
ID= -1mA
VDS= -10V
1
Drain Current : -ID [A]
Drain - Source Breakdown Voltage : -V(BR)DSS [V]
lElectrical characteristic curves
40
20
0
-50
0
50
100
0.1
0.01
0.001
150
0
Junction Temperature : Tj [°C]
VDS= -10V
Transconductance : gfs [S]
2
1
0
3
100
VDS= -10V
ID= -1mA
-50
2
Fig.10 Transconductance vs. Drain Current
3
0
1
Gate - Source Voltage : -VGS [V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : -VGS(th) [V]
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
50
100
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 25ºC
1
0.1
0.01
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
10
0.1
1
10
Drain Current : -ID [A]
6/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lElectrical characteristic curves
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
100
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Drain Current Dissipation : ID / ID max.(%)
1.2
Ta= 25ºC
80
60
20
0
10
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
VGS= -4.0V
VGS= -4.5V
VGS= -10V
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
10
15
30
Ta= 25ºC
1
5
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
1000
0.1
0
Gate - Source Voltage : -VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
1
ID= -7.0A
40
Junction Temperature : Tj [ºC]
100
ID= -3.5A
20
10
VGS= -10V
ID= -7A
0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
7/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lElectrical characteristic curves
1000
1000
VGS = -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
100
10
1
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Drain Current : -ID [A]
VGS = -4.5V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
100
10
1
0.1
1
10
Drain Current : -ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1000
VGS = -4.0V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
100
10
1
0.1
1
10
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Switching Characteristics
10000
10000
1000
Ta = 25ºC
f=1MHz
VGS=0V
1000
Crss
Coss
100
0.01
0.1
1
Ta = 25ºC
VDD= -15V
VGS= -10V
RG=10W
td(off)
Switching Time : t [ns]
Capacitance : C [pF]
Ciss
tf
100
td(on)
10
tr
10
1
100
0.01
0.1
1
10
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.20 Dynamic Input Characteristics
Fig.21 Source Current
vs. Source Drain Voltage
10
10
8
Source Current : -IS [A]
Gate - Source Voltage : -VGS [V]
VDS=0V
6
4
Ta = 25ºC
VDD= -15V
ID= -7A
RG=10W
2
0
0
10
20
30
40
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
50
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
0
0.5
1
1.5
Source-Drain Voltage : -VSD [V]
9/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.11 - Rev.C
Data Sheet
RQ1E070RP
lDimensions (Unit : mm)
D
b
x
e
S A
e1
l2
e
Lp
HE
c
L
E
L1
TSMT8
Lp1
A
A1
y S
l1
A
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
b
c
D
E
e
HE
L
L1
Lp
Lp1
x
y
DIM
b2
e1
l1
l2
MILIMETERS
MIN
MAX
0.75
0.85
0.00
0.05
0.27
0.37
0.12
0.22
2.90
3.10
2.30
2.50
0.65
2.70
2.90
0.10
0.30
0.10
0.30
0.19
0.39
0.19
0.39
0.10
0.10
INCHES
MIN
0.030
0.000
0.011
0.005
0.114
0.091
MAX
0.033
0.002
0.015
0.009
0.122
0.098
0.026
0.106
0.004
0.004
0.007
0.007
-
MILIMETERS
MIN
MAX
0.47
2.41
0.49
0.49
0.114
0.012
0.012
0.015
0.015
0.004
0.004
INCHES
MIN
-
MAX
0.019
0.095
-
0.019
0.019
Dimension in mm / inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.11 - Rev.C
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
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Please be sure to implement in your equipment using the Products safety measures to guard
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R1120A