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Intel 32nm Technology
Mark Bohr
Intel Senior Fellow
Logic Technology Development
Feb. 10, 2009
1
Key Messages
• Intel has developed a 32nm logic technology with
industry-leading features
• Intel is first to demonstrate working 32nm processors
• Intel’s 32nm process is on track for production
readiness in Q4 ’09
• Both CPU and SoC versions of this 32nm process will
be available
• Intel’s strength as an integrated device manufacturer
allows us to continue to deliver new generations of
advanced process technology on a 2 year cadence
2
Intel Logic Technology Development
Process Name
P1264
P1266
P1268
P1270
P1272
Lithography
65nm
45nm
32nm
22nm
16nm
1st Production
2005
2007
2009
2011
2013
Manufacturing
Development
3
45nm High-k + Metal Gate Transistors
Revolutionary transistor technology for
improved performance and lower leakage
4
45nm Microprocessor Products
Single Core
6 Core
Dual Core
Quad Core
8 Core
45nm production ramp has been the fastest yet
Twice as fast as the 65nm ramp in its first year
5
Intel Logic Technology Evolution
Process Name
P1264
P1266
P1268
P1270
P1272
Lithography
65nm
45nm
32nm
22nm
16nm
1st Production
2005
2007
2009
2011
2013
Manufacturing
Development
6
32nm Technology
• 2nd generation high-k + metal gate transistors
• Immersion lithography on critical layers
• 9 copper + low-k interconnect layers
• ~70% dimension scaling from 45nm generation
• Pb-free and halogen-free packages
7
32nm Transistors
• 2nd generation high-k + metal gate

0.9nm equivalent oxide thickness high-k
(scaled from 1.0 nm on 45nm)

Replacement Metal Gate process flow

30nm gate length

4th generation strained silicon
• >22% performance increase
• Tightest reported gate pitch
• Highest reported drive currents
8
Transistor Pitch Scaling
1000
Pitch
Gate Pitch
(nm)
0.7x every
2 years
100
1995
32nm Generation
112.5 nm Pitch
2000
2005
2010
Transistor gate pitch continues to scale 0.7x every 2 years
Tightest gate pitch of all reported 32nm technologies
9
32nm Transistor Performance
NMOS
PMOS
1000
1000
Intel
45nm
100
10
Intel
32nm
+14%
>5x
100
10
Better
1
1.0 V
Intel
45nm
IOFF (nA/um)
IOFF (nA/um)
1.0 V
Intel
32nm
+22%
>10x
Better
1
0.8 1.0 1.2 1.4 1.6 1.8 2.0
ION (mA/um)
0.6 0.8 1.0 1.2 1.4 1.6 1.8
ION (mA/um)
32nm provides improved performance or reduced leakage
Highest drive current of all reported 32nm technologies
10
SRAM Cell Size Scaling
10
Cell Area
(um2)
1
0.5x every
2 years
0.1
1995
2000
32nm Generation
0.171 um2 Cell
2005
2010
Transistor density doubles every 2 years
Moore’s Law continues!
11
32nm SRAM Test Chip
• 0.171 um2 cell
• 291 Mbit
• >1.9 billion transistors
• 4 GHz operation
• First demonstrated Sep ’07
12
Rapid Yield Improvement
90 nm
Defect
Density
(log scale)
65 nm
45 nm
32 nm
2 year
Higher
Chip
Yield
32nm yield improvement on track for Q4 ’09 production
13
32nm Manufacturing Fabs
D1D Oregon - Now
D1C Oregon - 4Q 2009
Fab 32 Arizona - 2010
Fab 11X New Mexico - 2010
14
System Integration
Discrete
Memory
Power
Regulator
Low
Power
Logic
High
Performance
Logic
SoC
I/O
High Perf.
Logic
Memory
Graphics
Analog
I/O
Analog
Graphics
Power
Reg.
Low Power
Logic
I/O
System integration will continue, using key elements
such as the AtomTM core, to realize improved
performance and power in a smaller form factor
15
32nm SoC Process
45 nm
Process:
Products:
P1266 P1266.8
CPU
SoC
32 nm
P1268
P1269
CPU
SoC
22 nm
P1270 P1271
CPU
SoC
Intel is developing both CPU and SoC versions of each
process generation, to provide transistors, interconnects
and other device features optimized for each product line
16
Integrated Device Manufacturer Advantage
Process
Product
Design for Manufacturing
Co-Optimized Process+Product
Rapid Yield Learning
Early Product Ramp
Design Tools
Masks
Manufacturing
Packaging
17
Summary
• Intel has developed a 32nm logic technology with
industry-leading features
• Intel is first to demonstrate working 32nm processors
• Intel’s 32nm process is on track for production
readiness in Q4 ’09
• Both CPU and SoC versions of this 32nm process will
be available
• Intel’s strength as an integrated device manufacturer
allows us to continue to deliver new generations of
advanced process technology on a 2 year cadence
18
19