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II.Parasitic Extraction Importance Capacitance extraction 2D/2.5D algorithms Finite difference method Boundary element methods Monte Carlo method Inductance extraction 5/25/2017 ELEN 689 1 Importance Interconnect delay dominates gate delay 45 40 35 30 25 20 15 10 5 0 Gate Interconnect (Al+SiO2) Interconnect (Cu+lowk) Sum (Al+SiO2) Sum (Cu+lowk) 85 0 50 0 35 0 25 0 18 0 13 0 10 0 delay (ps) technology 5/25/2017 ELEN 689 2 Math and Physics Review A vector field: F: RnRn that assigns each x a vector f(x) A scalar field: f: RnR that assigns each x a scalar f(x) 5/25/2017 ELEN 689 3 Example Vector Fields 5/25/2017 ELEN 689 4 Example Scalar Field G( x, y ) = 1 2 2 x +y G=1/7 G=1/6 G=1/5 G=1/4 5/25/2017 ELEN 689 5 Gradient The gradient of a scalar field f, denoted grad(f), is where is called del or nabla The gradient of a scalar field f is a vector field F=(Fx, Fy, Fz) The direction of grad(f) is the orientation in which the directional derivative has the largest value and |grad(f)| is the value. 5/25/2017 ELEN 689 6 Divergence The divergence of a vector field F, denoted div(F), is The divergence of a vector field is a scalar field It gives the rate at which "density" exits a given region of space 5/25/2017 ELEN 689 7 Electric Field For a point charge q at position r, the electric field at r’ 5/25/2017 ELEN 689 8 MKS Measurement Measures Permittivity 0 and permeability 0 Length in meters Mass in kilograms Time in seconds 0=1/(c20) For vacuum, 40=111.27 pF/m 5/25/2017 ELEN 689 9 Potential field For static electric field E, the potential (or voltage) (x,y,z) is defined as E=–, or q where E ds = E x dx + E y dy + E z dz 5/25/2017 ELEN 689 10 Capacitor A capacitor is a device that can store an electric charge by applying a voltage The capacitance is measured by the ratio of the charge stored to the applied voltage Capacitance is measured in Farads 5/25/2017 ELEN 689 11 Parasitic Capacitance Given a set of conductors, compute the capacitance between all pairs of conductors. - + + + - 5/25/2017 1V + + - - - C=Q/V - ELEN 689 12 2D Methods Area capacitance: area overlap between adjacent layers Coupling capacitance: between side-walls on the same layer Fringing capacitance: between side-wall and adjacent layers 5/25/2017 ELEN 689 m3 m2 m2 m2 m1 13 2D Method C = Ca*(overlap area) +Cc*(length of parallel run) +Cf*(perimeter) Coefficients Ca, Cc and Cf are given by the fab Cadence Dracula Fast but inaccurate (100%) 5/25/2017 ELEN 689 14 2.5D Method Consider interaction between layer i and layers i+1, i+2, i–1 and i–2 Consider distance between conductors on the same layer Cadence Silicon Ensemble Accuracy 50% 5/25/2017 ELEN 689 15 Library Based Methods Build a library of tens of thousands of patterns and compute capacitance for each pattern Partition layout into blocks, and match with the library Accuracy 20% 5/25/2017 ELEN 689 16 3D Methods Finite difference/finite element method Most accurate, slowest Raphael Boundary element method FastCap, Hicap Monte Carlo random walk 5/25/2017 QuickCap ELEN 689 17 Finite Difference Method Gauss’ Law Let Vi be potential at each grid point Approximate derivative by finite difference Add boundary conditions Solve a linear system 5/25/2017 ELEN 689 18 FDM (cont’d) For conductor exterior, solve Laplace differential equation l In 2D: 5/25/2017 k i m j ELEN 689 19 FDM (cont’d) Boundary conditions Potential on conductors are given To avoid solving an infinite problem, set boundary condition on enclosing box: Closed box: V=0 on the box Open box: dV/dn=0 on the box box conductors 5/25/2017 ELEN 689 20 FDM (cont’d) Once we have E, use Gauss law to compute charge where S is any enclosed surface and q is the amount of charge in S 5/25/2017 ELEN 689 21 Boundary Element Method Laplace integral equation, where (x) is known surface potential, (x’) is charge density, da’ is incremental conductor surface area, x’ is on da’, and 1/|x-x’| is kernel. 5/25/2017 ELEN 689 22 BEM (cont’d) Partition conductor surfaces into n small panels A1,…, An. Assume charge qi on each panel Ai We have linear system Pq=v, where q=(q1,…,qn) is the vector of unknown charges, v=(v1,…,vn) is the vector of known panel potential. 5/25/2017 ELEN 689 23 BEM (cont’d) Each entry Pij of potential coefficient matrix P represents the potential at panel Ai due to unit charge on panel Aj Solution q of linear system Pq=v gives capacitance 5/25/2017 ELEN 689 24 BEM Example 1 Conductor 1 2 5/25/2017 Conductor 2 1 ELEN 689 2 25 Step 1. Discretization Conductor 1 A1 5/25/2017 Conductor 2 A2 A3 ELEN 689 A4 26 Step 2. Compute P 1 A1 A2 2 A3 1 A4 2 P12 = P34 =1/(40)*(1/1), P13 = P24 =1 /(40)*(1/3) P23 = 1/(40)*(1/2), P14 = 1/(40)*(1/4) P11 = P22 = P33 = P44 =? 5/25/2017 ELEN 689 27 Step 3. Approximate Pii Compute potential at the center of a disk due to uniform charge distribution 1/2 5/25/2017 ELEN 689 28 Step 4. Linear System Solve it using Matlab: q1=3.0966, q2=3.1664, q3=–0.7201, q4=–0.3532 5/25/2017 ELEN 689 29 Step 5. Compute Capacitance Compute capacitance C11=q1+q2=3.0966+3.1664=6.263, C12=q3+q4=–0.7201–0.3532= –1.0733 Repeat for other conductors Final capacitance matrix: 5/25/2017 ELEN 689 30 Computational Complexity Straightforward method 5/25/2017 Discretization: O(N) Compute P: O(N2) Solve Pq=v: O(N3) ELEN 689 31 Assignments #2 (due 1/28) 2.1 Use finite difference method to compute the capacitance of three conductor surfaces. Consider the surfaces have 0 thickness. - 1 x 1, - 1 y 1, z = - 10 - 1 x 1, - 1 y 1, z = 0 - 1 x 1, - 1 y 1, z = 10 2.2 Use boundary element method to solve the same problem. Compare the time and results. 5/25/2017 ELEN 689 32 2.3 Use FastCap on eesun1 or download it from http://rleweb.mit.edu/vlsi/codes.htm to compute the problem again 2.4 Prove the capacitance matrix must be symmetric, even if the conductors are of different sizes and shapes Research Problem (not required to turn in): How to use the symmetry property of the capacitance matrix to save computation time? 5/25/2017 ELEN 689 33