Survey
* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project
* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project
Fast high-voltage, high-current switching using stacked IGBTs By: Zarir Ghasemi Supervisor: Prof. S. J. Macgregor Institute for Energy and Environment University of Strathclyde Glasgow 1 Pulsed Power System with Examples of System Components Intermediate Energy Store PFN Coaxial Cable, Stripline Switch Semiconductor Device, Spark Gap Load Plasma Drill, Treatment Cell HV PowerSupply 2 Comparison of solid-state switching devices Voltage Rating Current Rating Speed Thyristor High High Low GTO High High Low MOSFET Low Low High MCT High Medium Medium MAGT Medium High High SIT Medium Medium High IGBT Medium Medium High Availability Readily available Medium Readily available Special order only Special order only Special order only Readily available Cost Low Medium Low High High High Low 3 An X2 Non-Inverting Blumlein Cable Generator OUTPUT CHARGING HV ELEMENT b a CABLE 1 c d CABLE 2 SWITCH 4 Problems associated with stacking IGBTs • • • • • • • Signal synchronisation Signal isolation (Magnetic or Optical ) Voltage sharing (Passive or Active snubbers) Current sharing Stack configuration Diagnostic Protection 5 Photograph of 55 IGBT stack with voltage and current ratings of 2.5 kV and 250 A, respectively. 6 Voltage across the device and output pulse for two 1.2 kV IGBTs 7 Photograph of 10 kV, 400 A stack of IGBT modules consisting of 105 1.2 kV IGBTs. 8 Photograph of 10 kV, 400 A stack of IGBT modules, optically triggered Over-voltage protection circuit 9 Photograph of 3 kV, 2 kA Marx generator 10 Conclusion • The IGBT was determined to be the preferred device for stacking • IGBT’s can handle a peak current of five times their normal rating during short-pulse conducting, if they are driven by fast gate pulses. • The dual degradation of the collector-emitter voltage exists in some of available IGBT devices. • A prototype stack at voltage and current ratings of 10 kV and 400 A, with a voltage fall-time of about 45 ns was successfully tested. • An optically-coupled stack of IGBTs with voltage and current ratings of 10 kV and 400 A was built and operated in a generator, used for Pulsed Electric Field (PEF) inactivation of microorganisms. • A modular Marx generator, having an output voltage rating of 3 kV and a peak current rating of 2 kA, was designed and evaluated. 11