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Quantum Physics 2002 Quantum Tunnelling Recommended Reading: R.Harris, Chapter 5 Sections 1, 2 and 3 Potential Barrier: E < U0 I II III U = U0 E = K.E. x =L x =0 Region I d2 2 k1 φ 1 0 dx2 Potential 0 x 0 U(x) U0 0 x L 0 L x E = K.E. U x Region III Region II d2 2 α φ 2 0 dx2 d2 2 k1 φ 3 0 1 dx2 where 2 k1 2mE 2 and α2 2mU0 E 2 Wavefunctions Region I: φ1 x Aeik1x Beik1x Incident Region II: 2 Reflected φ 2 x Ce αx De αx Must keep both terms. Do you see why? 3 Region III: φ3 x Feik1x Geik1x Transmitted Left Moving 4 No Ge ik1x term because there is no particle incident from the right. Boundary Conditions Match wavefunction and derivative at x = 0. φ10 φ 2 0 Aeik10 Beik10 Ceα0 Deα0 AB CD dφ1 dφ 2 dx 0 dx 0 5 ik1Aeik10 ik1Beik10 αCeα0 αDeα0 ik1A B αC D 6 Match wavefunction and derivative at x = L. φ2 L φ3 L dφ dφ 2 3 dx L dx L CeαL DeαL Feik1L 7 αCeαL αDeαL ik1Feik1L 8 Boundary Conditions We now have 4 equations and 5 unknowns, Can solve for B, C, D and F in terms of A. This is left as an exercise, A lot of algebra but nothing complicated!! Again we define a Reflection and Transmission coefficient: R * B 2 reflcurrent B B * inc current A A A 2 2 trans.current k 3 F *F F T * inc.current k1 A A A 2 Since k1 = k3. Substituting for B and F in terms of A gives: sinh2 αL Reflection Coefficient R R sinh2 αL 4 α 2k12 k12 α 2 2 9 R and T Coefficients: Transmission Coefficient T T 4 α 2k12 k12 α sinh αL 4 k12k 22 2 2 2 k12 α 2 2 Recall that sin(i) =sinh(). We can write k1 and k2 in terms of E and U0. 2 k1 2mE 2 k2 2 2mE U0 2 This then gives E E 4 1 U0 U0 T E E 2 2mU0 E sinh L 4 1 U0 U0 11 10 Dividing across by E E 4 1 U0 U0 α L 4EU0 E U20 sinh2 1 T gives 1 11a similarly we can find an expression for the Reflection coefficient 2mU0 E sinh2 L R E E 2 2mU0 E sinh L 4 1 U0 U0 12 or rearranging 4EU0 E R 1 2 2 U0 sinh αL -1 12a Graph of Transmission Probability 100 100 L = 0.1 nm U0 = 0.1 eV U0 = 1.0 eV 10-5 L = 0.5 nm 10-2 T T L = 1.0 nm 10-10 U0 = 5.0 eV 10-4 U0 = 10.0 eV 10-15 0 0.2 0.4 0.6 0.8 1.0 E/U0 Transmission curves for a barrier of constant width 1.0 nm with different heights U0 10-6 0 0.2 0.4 0.6 0.8 1.0 E/U0 Transmission curves for a barrier of constant height 1.0 eV for a series of different widths L. Wavefunction φ 2 x Ceαx Deαx φ1 x Aeik1x Beik1x φ3 x Feik1x U0 E Optical Analog evanescent wave If reflection angle is greater than the critical angle then the light ray will be totally internally reflected If second prism is brought close to the first there is a small probability for part of the incident wave to couple through the air gap and emerge in the second prism. Limiting Case Tunnelling through wide barriers: Inside the barrier the wavefunction is proportional to exp(-x) or exp(-x/), where = 1/ is the penetration depth (see Potential step lecture). If L then very little of the wavefunction will survive to x = L. The condition for a ‘wide barrier’ is thus 2mU0 E 1 L αL L 1 13 δ The barrier can be considered to be wide if L is large or if E << U 0. Making this approximation we see that e y e y y 1 e y sinhy 2 2 so for a thick barrier equation 11 reduces to 2y e and then sinh y 4 2 E E 2 αL T 16 1 e U0 U0 14 The probability of tunnelling is then dominated by the exponentially decreasing term. Example An electron (m = 9.11 10-31kg) encounters a potential barrier of height 0.100eV and width 15nm What is the transmission probability if its energy is (a) 0.040eV and (b) 0.060 eV? We first check to see if the barrier is thick (equation 13). for E = 0.04eV 2 9.11 1031kg 0.10 0.40 1.602 1019 J L 15 109 m δ 1.055 1034 J.s = 18.8 >> 1 thick barrier and for E = 0.060: L/ = 15.5 >> 1 thick barrier we can use equation 14 for the transmission probability 0.04 0.04 218.8 (a) E 0.04eV T 16 1.8 1016 1 e 0.10 0.10 0.06 0.06 215.4 13 (b) E 0.06eV T 16 1 e 1 . 8 10 0 . 10 0 . 10 Very small in both cases!! Can we observe this in a real stuation Field Emission +V0 metal Cathode electrons bound by potential step at surface Anode Tunnelling through potential barrier Field Emission Displays (FED) Scanning Tunnelling Microscope (STM) Scanning Tunnelling Microscope (STM) Scanning Tunnelling Microscope (STM) Si (111) Surface Pt Surface Pentacene molecules on Silicon Sample negative Sample positive The Tunnel Diode see http://mxp.physics.umn.edu/s98/projects/menz/poster.htm Conduction Band eV donors Conduction Band 0 EF EF EF Valence Band acceptors Valence Band p-type n-type p-type -- ++ -- ++ -- ++ n-type The Tunnel Diode reversed biased forward biased Conduction Band eV0 + Vext eV0- eVext EF EF Valence Band - + - + - + p-type - + Vext n-type p-type --- +++ --- +++ --- +++ - + Vext n-type The Tunnel Diode Alpha Decay of Nuclei Alpha particle Uranium 238 Thorium 234 Strong Nuclear Force Electrostatic repulsion To escape the nucleus the -particle must tunnel.