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Drexel University
ECE Department
ECEE 302 Electronic
Devices
7 October 2002
Revised: 14 October 2002
ECEE 302: Electronic Devices
1st Examination Review Guide
– Chapter 1 Crystal Structure
– Chapter 2 Physical Foundation
– Chapter 3 Carriers Properties (pages 55-70
only)
– Representative Problems
14 October 2002
BMF-Lecture 3-101402-Page -1
Copyright © 2002 Barry Fell
Drexel University
ECE Department
ECEE 302 Electronic
Devices
Chp 1 - Crystal Properties
• Crystal Structure
– Lattice
– Basis
– Primitive and Unit Cell
• Basic crystal lattices
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–
–
–
Simple Cubic
Body Centered Cubic
Face Centered Cubic
Diamond Lattice (Addition)
• Properties of basic crystal lattices
– Number of atoms per unit cell
– close packing fraction
• Miller Indices and Crystal Directions
14 October 2002
BMF-Lecture 3-101402-Page -2
Copyright © 2002 Barry Fell
Drexel University
ECE Department
•
•
•
•
•
•
Energy Operator
Momentum Operator
Potential Well Discrete Energy Levels from Boundary conditions
Expectation value of an operator
Hydrogen Atom Quantum numbers
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–
–
–
•
•
Chp 2 - Atoms and Electrons
Photo-electric Effect
Bohr Atom and calculation of spectral line frequencies or wavelength
Uncertainty principle
deBroglie-Einstein Relations
Wave Function and Wave Properties
Schrodinger Wave Equation
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–
–
•
•
ECEE 302 Electronic
Devices
n-Energy quantum number
l-angular momentum quantum number
m-magnetic quantum number
s - electron spin quantum number
Pauli Exclusion Principle
Structure of the Periodic Table
–
–
relation of orbital shells with each element
building up principle
14 October 2002
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Copyright © 2002 Barry Fell
Drexel University
ECE Department
ECEE 302 Electronic
Devices
Chp 3 - Energy Bands and Charge Carriers
• Atomic Bonding
– ionic
– covalent
• Band Theory of Solids
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–
–
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Band formation (Valance Band and Conduction Band)
Metals
Insulators
Semi-Conductors
• Direct and Indirect Semiconductors (Energy and momentum
transitions)
• Electrons and Holes (pp 66-70)
• Charge carriers (Electrons and Holes)
– Effective Mass (1-dimensional only)
– intrinsic/extrinsic semi-conductors
– n-Type and p-Type material
14 October 2002
Material below this line
and on the next page
will NOT be covered on
Examination 1.
BMF-Lecture 3-101402-Page -4
Copyright © 2002 Barry Fell
Drexel University
ECE Department
ECEE 302 Electronic
Devices
Chp 3 - Energy Bands and Charge Carriers
(continued)
• Carrier (electron and hole) Concentration
– Fermi distribution/Fermi Energy Level
– density of states
– Calculation of electron and hole concentrations
• Carrier (electron and hole) Behavior in a Solid
–
–
Theory of Conductivity
Current Density
– Carrier mobility
– Hall Effect
• Invariance of the Fermi Level at Equilibrium
14 October 2002
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Copyright © 2002 Barry Fell
Drexel University
ECE Department
ECEE 302 Electronic
Devices
Representative Problems
• Chapter 1
– 1.1, 1.2,1.3,1.8,1.12,1.13,1.14
• Chapter 2
– 2.1(c), 2.2, 2.3, 2.4, 2.5, 2.6, 2.8, 2.9, 2.10, 2.11,2.12
• Chapter 3 pp. 55- 70 (for this examination)
– 3.1, 3.9 (a)-only
14 October 2002
BMF-Lecture 3-101402-Page -6
Copyright © 2002 Barry Fell