Download Figure 10-2

Figure 10-1 (p. 488)
Illustrating the dynamic range of a realistic amplifier.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-2 (p. 489)
A random voltage generated by a noisy resistor.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-3 (p. 490)
Equivalent circuit of a noisy resistor delivering maximum power to a load resistor
through an ideal bandpass filter.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-4 (p. 490)
The equivalent noise temperature, Te, of an arbitrary white noise source.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-5 (p. 491)
Defining the equivalent noise temperature of a noisy amplifier. (a) Noisy amplifier.
(b) Noiseless amplifier.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-6 (p. 492)
The Y-factor method for measuring the equivalent noise temperature of an amplifier.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-7 (p. 493)
Determining the noise figure of a noisy network.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-8 (p. 494)
Determining the noise figure of a lossy line or attenuator with loss L and
temperature T.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-9 (p. 495)
Noise figure and equivalent noise temperature of a cascaded system. (a) Two
cascaded networks. (b) Equivalent network.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-10 (p. 496)
Block diagram of a wireless receiver front-end for Example 10.2
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-11 (p. 497)
A passive two-port network with impedance mismatches. The network is at physical
temperature T.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-12 (p. 499)
A lossy transmission line at temperature T with an impedance mismatch at its input
port.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-13 (p. 501)
A general nonlinear device or network.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-14 (p. 503)
Definition of the 1 dB compression point for a nonlinear amplifier.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-15 (p. 504)
Output spectrum of second- and third-order two-tone intermodulation products,
assuming 1 < 2.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-16 (p. 504)
Third-order intercept diagram for a nonlinear component.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-17 (p. 506)
Illustrating linear dynamic range and spurious free dynamic range.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-18 (p. 507)
Third-order intercept point for a cascaded system. (a) Two cascaded networks.
(b) Equivalent network.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-19 (p. 508)
System for Example 10.5.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-20 (p. 510)
Basic frequency conversion
operations of rectification, detection,
and mixing. (a) Diode rectifier.
(b) Diode detector. (c) Mixer.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-21 (p. 511)
V-1 characteristics of a Schottky diode.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-22 (p. 511)
Equivalent AC circuit model for a Schottky diode.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-23 (p. 512)
Output spectrum of a detected AM modulated signal.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-24 (p. 513)
Square-law region for a typical diode detector.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure on page 514.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-25 (p. 515)
Equivalent circuits for the ON and OFF states of a PIN diode. (a) Reverse bias
(OFF) state. (b) Forward bias (ON) state.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-26 (p. 515)
Single-pole PIN diode switches. (a) Series configuration. (b) Shunt configuration.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-27 (p. 516)
Simplified equivalent circuits for the series and shunt single-pole PIN diode
switches. (a) Series switch. (b) Shunt switch.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-28 (p. 517)
Circuits for single-pole double-throw
PIN diode switches.
(a) Series. (b) Shunt.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-29 (p. 518)
A switched-line phase shifter.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-30 (p. 519)
Loaded-line phase shifters. (a) Basic circuit. (b) Practical loaded-line phase shifter
and its equivalent circuit.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-31 (p. 520)
A reflection phase shifter using a quadrature hybrid.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-32 (p. 520)
Equivalent circuit of a reverse biased varactor diode.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-33 (p. 523)
(a) Cross section of a GaAs MESFET; (b) top view, showing drain, gate, and source
contacts.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-34 (p. 524)
Small-signal equivalent circuit for a microwave FET in the common-source
configuration.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-35 (p. 524)
(a) DC characteristics of a GaAs FET; (b) biasing and decoupling circuit for a GaAs
FET.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-36 (p. 525)
(a) Cross section of a microwave silicon bipolar transistor; (b) top view, showing
base and emitter contacts.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-37 (p. 525)
Simplified hybrid- equivalent circuit for a microwave bipolar transistor in the
common emitter configuration.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-38 (p. 526)
(a) DC characteristics of a silicon bipolar
transistor; (b) biasing and decoupling circuit
for a bipolar transistor.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-39 (p. 528)
Layout of a hybrid microwave integrated circuit.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-40 (p. 528)
Photograph of one of the 25,344 hybrid integrated T/R modules used in Raytheon’s
Ground Based Radar system. This X-band module contains phase shifters,
amplifiers, switches, couplers, a ferrite circulator, and associated control and bias
circuitry. Courtesy of Raytheon Company, Lexington, MA.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-41 (p. 530)
Layout of a monolithic microwave integrated circuit.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure 10-42 (p. 530)
Photograph of a monolithic integrated X-band power amplifier. This circuit uses
eight heterojunction bipolar transistors with power dividers/combiners at the input
and output to produce 5 watts. Courtesy of M. Adlerstein and R. Wohlert, Raytheon Company.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons
Figure on page 531.
Microwave Engineering, 3rd Edition by David M. Pozar
Copyright © 2004 John Wiley & Sons