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Topics
Electrical properties of static combinational
gates:
– transfer characteristics;
– delay;
– power.
Effects of parasitics on gate.
Driving large loads.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Logic levels
Solid logic 0/1 defined by VSS/VDD.
Inner bounds of logic values VL/VH are not
directly determined by circuit properties, as
in some other logic families.
VDD
logic 1
unknown
VSS
Modern VLSI Design 2e: Chapter 3
VH
VL
logic 0
Copyright 1998 Prentice Hall PTR
Logic level matching
Levels at output of one gate must be
sufficient to drive next gate.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Transfer characteristics
Transfer curve shows static input/output
relationship - hold input voltage, measure
output voltage.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Inverter transfer curve
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Logic thresholds
Choose threshold voltages at points where
slope of transfer curve = -1.
Inverter has a high gain between VIL and
VIH points, low gain at outer regions of
transfer curve.
Note that logic 0 and 1 regions are not equal
sized, in this case, high pullup resistance
leads to smaller logic 0 range.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Logic threshold example
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Noise margin
Noise margin = voltage difference between
output of one gate and input of next. Noise
must exceed noise margin to make second
gate produce wrong output.
In static gates, t= voltages are VDD and
VSS, so noise margins are VDD-VIH and VILVSS.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Delay
Assume ideal input (step), RC load.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Delay assumptions
Assume that only one transistor is on at a
time. This gives two cases:
– rise time, pullup on;
– fall time, pullup off.
Assume resistor model for transistor.
Ignores saturation region and
mischaracterizes linear region, but results
are acceptable.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Current through transistor
Transistor starts in saturation region, then
moves to linear region.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Resistive model for transistor
Average V/I at two voltages:
– maximum output voltage
– middle of linear region
Voltage is Vds, current is given Id at that
drain voltage. Step input means that Vgs =
VDD always.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Resistive approximation
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Effective resistance
0.5m process, minimum-sized
type Vdd-Vss = 5V Vdd - Vss = 3.3V
Rn
3.9k
6.8k
Rp
14k
25k
effective resistance of P-type is about 3.5
times effective resistance of N-type
effective resistance increases as the power
supply voltage goes down
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Inverter delay circuit
Load is resistor + capacitor, driver is
resistor.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Inverter delay
Vout(t) = VDD exp{-t/(Rn+RL)/ CL}
tf = 2.2 R CL
For pullup time, use pullup resistance.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Quality of RC approximation
Spice level 3
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Quality of step input
approximation
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Results of using small pullup
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Transistor sizing
Effective resistance depends on transistor
W/L - less delay means wider transistors.
For equal pullup and pulldown times, W/L
of pullup and pulldown obey Kp/Kn.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Complex gates
Effective resistance of gate depends on
complete pullup or pulldown network.
When evaluating NAND gate delay:
– pullups are in parallel
– pulldowns are in series
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Body effect & signal ordering
Early - arriving
signal
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Power consumption circuit
Input is square wave.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Power consumption analysis
Almost all power consumption comes from
switching behavior.
Static power dissipation comes from
leakage currents.
Surprising result: power consumption is
independent of the sizes of the pullups and
pulldowns.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Leakage currents
Flow from source or drain to the substrate
due to diode formed by junction.
General form of leakage current is given by
diode law:
– Il = Il0(eVd/kt - 1)
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Power consumption
A single cycle requires one charge and one
discharge of capacitor: E = CL(VDD - VSS)2 .
Clock frequency f = 1/t.
Power = E f = f CL(VDD - VSS)2.
Resistance of pullup/pulldown drops out of
energy calculation.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Parasitics and performance
a
b
c
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Effect of parasitics
a: Capacitance on power supply is not bad,
can be good in absence of inductance.
Resistance slows down static gates, may
cause pseudo-nMOS circuits to fail.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Effects of parasitics, cont
b: Increasing capacitance/resistance reduces
input slope.
c: Similar to parasitics at b, but resistance
near source is more damaging, since it must
charge more capacitance.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Driving large loads
Sometimes, large loads must be driven:
– off-chip;
– long wires on-chip.
Sizing up the driver transistors only pushes
back the problem - driver now presents
larger capacitance to earlier stage.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Cascaded driver circuit
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR
Optimal sizing
Use a chain of inverters, each stage has
transistors a larger than previous stage.
Optimal number of stages nopt = ln(Cbig/Cg).
Driver sizes are exponentially tapered.
Modern VLSI Design 2e: Chapter 3
Copyright 1998 Prentice Hall PTR