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Introduction to
Microelectronic Fabrication
by
Richard C. Jaeger
Distinguished University Professor
ECE Department
Auburn University
Chapter 10
Bipolar Process Integration
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved.
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication,
Second Edition by Richard C. Jaeger. ISBN0-20144494-1.
Copyright Notice
• © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All
rights reserved. This material is protected under all copyright
laws as they currently exist. No portion of this material may be
reproduced, in any form or by any means, without permission in
writing from the publisher.
• For the exclusive use of adopters of the book Introduction to
Microelectronic Fabrication, Second Edition by Richard C.
Jaeger. ISBN0-201-44494-1.
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
Standard Buried Collector (SBC) Process
Collector
Base
Isolation
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material is protected under all copyright laws as they currently exist. No portion of this
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Emitter
Isolation
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
SBC Process
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.

Npn Bipolar Transistors
Current Gain & Unity Gain Frequency
Current Gain 

Unity Gain Frequency f
IC
IB
fT 
GB W B2
 

GE L2B
T
1
2
1
WB  base width
L B  diffusion length in the base
G B and G E  base and emitter Gummel numbers
GB 

N x 
dx
base D
B x 
GE 

W B2
X
  rE CBE 
 CJC  Csub rC  C
DB
2VS
  transit time
N x 
dx
emitter D
E x 
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.

For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
Diffusion Lengths
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material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
Depletion Layer Extents
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
Emitter-base Breakdown Voltage
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material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
Circular Emitters
• Circular emitters are used
to improve device
matching
• Here a quad of transistors
are cross connected to
form a differential pair
Figure 10.6
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material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
Collector-base Breakdown Voltage
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material is protected under all copyright laws as they currently exist. No portion of this
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Npn Bipolar Transistors
Punch-through Voltage
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Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Circuit Elements
n+ Resistor (Emitter Diffusion)
• Resistor formed using n+
emitter diffusion into the
isolation region
• Low sheet resistance 1050 W/square
• Low breakdown voltage
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Circuit Elements
p-type Resistor (Base Diffusion)
• Base diffusion used as a ptype resistor
• Typical sheet resistance
100-300 W/square
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material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Circuit Elements
n-type Resistor (Epi Layer)
• Resistor formed in the an
epitaxial tub
• High sheet resistance
• 1000-10000 W/square
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Circuit Elements
p-type Pinch Resistor (Also JFET)
• Base region “pinched”
down to increase sheet
resistance
• JFET formed by the same
structure
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Circuit Elements
Substrate pnp Transistor
• Substrate pnp with
transistor collector formed
by wafer or “substrate”
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material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Circuit Elements
Lateral pnp Transistor
• Lateral pnp
• Base width determined by
lithography capability
• Poor current gain and frequency
response compared to vertical
device
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Circuit Elements
Schottky Diode
• Schottky diode can be readily
formed by metal contact to a
lightly doped n-type
semiconductor
• p-type ring added to eliminate
edge breakdown
• Wilamowski diode [7] adds
diffusions to increase
breakdown voltage. Depletion
layers merge under reverse bias
and a breakdown voltage
similar to that of a pn junction
is achieved.
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Process
Junction Isolation
• Adjacent transistors separated by p-diffusion through the epitaxial
layer.
• Diffusion must be wide enough to prevent space charge layers from
merging
• Base-isolation spacing must be large enough so that space charge
layers do not merge
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This
material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
SBC Transistor Layout
Design Rules
Figure 10.17
SBC transistor layout using the design rules in Table 10.1
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material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Advanced Bipolar Devices
Oxide Isolation
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Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Advanced Bipolar Devices
Oxide Isolation
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material is protected under all copyright laws as they currently exist. No portion of this
material may be reproduced, in any form or by any means, without permission in writing
from the publisher.
For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Advanced Bipolar Devices
Trench Isolation
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Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Advanced Bipolar Devices
SiGe HBT
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Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Advanced Bipolar Devices
SiGe HBT
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material is protected under all copyright laws as they currently exist. No portion of this
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication, Second
Edition by Richard C. Jaeger. ISBN0-201-44494-1.
Bipolar Isolation Techniques
Collector Diffused Isolation
• Figure 10.22 - Cross section of a transistor fabricated with the
CDI process [18]
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Bipolar Isolation Techniques
Dielectric Isolation
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Bipolar Isolation Techniques
SIMOX
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BiCMOS Processes
CMOS + Bipolar
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BiCMOS Processes
CMOS + Bipolar
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BiCMOS Processes
CMOS + Bipolar
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BiCMOS Processes
CMOS + Bipolar
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Bipolar Process Integration
References
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End of Chapter 10
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This material is protected under all copyright laws as they currently exist. No
portion of this material may be reproduced, in any form or by any means,
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For the exclusive use of adopters of the book
Introduction to Microelectronic Fabrication,
Second Edition by Richard C. Jaeger. ISBN0-20144494-1.