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Photon is our Business
Newly Developed Semiconductor Detectors
・Multi-Pixel Photon Counter (MPPC)
・Fully-Depleted Back-illuminated CCD
HAMAMATSU PHOTONICS K.K.
Koei Yamamoto
June 27th 2007
PD07 Kobe
CONFIDENTIAL
HAMAMATSU
1
Solid State Div.
Photon is our Business
■
Multi Pixel Photon Counter（MPPC）
What’s MPPC?
Solid state photon counter having
Multi pixelated Geiger-mode APDs
with self-quenching resistance
The MPPC (Multi-Pixel Photon Counter) is developed by HAMAMATSU PHOTONICS K. K.
and it is one of the products of Si-PM (Silicon Photo multiplier) family which was originally
developed in Russia.
HAMAMATSU MPPC is designed as a photon counting device based on structures of a Si
APD which was adopted by CERN (CMS).
HAMAMATSU named this product MPPC which is a trademark.
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The candidates of name in SiPM faimily
SiPM (Silicon Photo Multiplier)
SiPMT (Silicon Photo Multiplier Tube)
MRS-APD (Metal Resistive Semiconductor APD)
SPM (Silicon Photo Multiplier)
MPGM APD (Multi Pixel Geiger-mode APD)
AMPD (Avalanche Micro-pixel Photo Diode)
SSPM (Solid State Photo Multiplier)
GM-APD (Geiger Mode APD)
SPAD (Singe Photon Avalanche Diode)
MPPC : Multi Pixel Photon Counter
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What is the structure of MPPC
to improve the performances
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Photo Absorption coefficient of Silicon
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electron
electron
holes
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holes
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CMS(CERN) APD
S 8 6 6 4 - 5 5 G ain U n ifo rm ity
(T yp. M = 5 0 )
400
80%
300
60%
200
40%
100
P h o to se n sitivity
Q E
0
200
400
600
800
20%
0%
1000 1200
W ave le n gth (n m )
po sitio n (m m )
HAMAMATSU
6.00
100%
5.25
500
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
3.75
4.50
120%
0.00
0.75
1.50
2.25
3.00
600
Q E (%)
P hoto sensitivity(m A /W )
S 8 6 6 4 - 5 5 S pe c tral re spo n se c u rve
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E field strength
P+
P
N
N-
N+
Hamamatsu Reverse Structure APD for CMS
・ APD structure used in the electromagnetic Calorimeter of CMS.
・ The p/n junction is formed in an epitaxial layer with 50μm thickness.
・ Bias 350 to 400V to get gain 50
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n＋
p
p－-epi
p＋＋-subst.
N/P-Reach through
p＋
n
n－-epi
p＋
p－
p
n＋
n＋＋-subst.
P/N-Reach through
N/P-Reach through
Back illumination type
p＋
p－-epi
n＋＋-subst.
HPK Reverse structure
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What are the characteristics of MPPC
1600 pixel
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■
Pixel number and application
PET
HEP calorimeter
25um pitch
1600pixel
Fluorescence meas.
Neutrino detection
50um pitch 100um pitch
400pixel
100pixel
Dynamic range wide
narrow
The linearity is up to about 60% of the total pixels toward incident
photons ; plural photons may enter one pixel beyond it
Geo. efficiency low（10～40%）
high（～90%)
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■
Specification of 1mm□, MPPC
1600
HAMAMATSU
400
100
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■
Bias vs. Gain
50μm 400pixels
25μm 1600pixels
100μm 100pixels
S10362-11-025U/C
S10362-11-050U/C, -100U/C
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■
Bias vs. Dark count
25μm 1600pixels
50μm 400pixels
100μm 100pixels
S10362-11-025U/C
S10362-11-050U/C, -100U/C
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Photon Detection Efficiency （PDE）
100μm Pixel
（100 pixel type）
50μm Pixel
（400 pixel type）
25μm Pixel
（1600 pixel type）
※including the cross-talk and after pulse
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Photon is our Business
■
Output signal of MPPC
Photon counting by pulse height
（liner Amp.）
Photon counting by output charge
（charge Amp.）
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Energy Resolution
1500
170keV
511keV
Count per Channel
MPPC: 50mm pitch, 3mm square
LSO: 3mm x 3mm x 20mm
FWHM @511keV: 13%
1000
500
1275keV
0
0
500
1000
1500
Channel Number
HAMAMATSU
2000
2500
3000
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Gain uniformity
（400 pixel, 100 samples）
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PDE uniformity
（400 pixel, 100samples）
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1600 pixel Microscopic view
S10362-11-025U ( 2006.12 )
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Laser Scan in One Pixel
• Pin-point scan ：YAG laser (l = 532 nm) with spot size ~ 1 mm.
• Variation of photon sensitivity and gain in one pixel are evaluated.
• Observed variation is 2 ~ 5 % in a sensitive area
for the 100 / 400 / 1600 pixel MPPCs.
x-point (2mm pitch)
Gain (x 105)
Variation ~ 3 %
y-point (1mm pitch)
One pixel
1600 pixel Gain
Sensitivity (arbitrary)
y-point (2mm pitch)
1600 pixel Sensitivity
x-point (1mm pitch)
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Time resolution at center in different pixel
MPPC: MPPC:1mm2 50μm pitch
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Time resolution in one pixel
MPPC:1mm2 50μm pitch
HAMAMATSU
24
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Package Developments
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Plastic PKG（1mm□ × 1ch.）
3.2
4.2
1.3
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SMD PKG（1mm□ × 1ch.）
1.0
2.4
1.9
[mm]
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SMD PKG（3mm□ × 1ch.）
1.0
4.4
3.9
[mm]
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CERAMIC PKG（3mm□ × 1ch.）
2.0
7.2
5.9
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CERAMIC PKG（3mm□ × 4ch.）
8.1
2.0
8.95
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■
MPPC’s future plan
・Increase reproducibility and uniformity
・ Large sensitive area , Array and Matrix
・Enhance PDE
・Suppress after pulse and cross talk
・Quenching resistance optimization
・Package development (small, cheap, rugged)
・Custom design ( pitch, package, array)
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Al optical separation and Trench
etching
Al optical separation
Trench etching
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MPPC Module
Features
-Employs a Geiger-mode multi-pixel APD(MPPC)
-Integrates a signal readout circuit ideal for MPPC
-Built-in high-voltage circuit and temperature-compensated circuit
-Three types of output:
analog, comparator, pulse calculation value
-USB interface for easy handling: driven by USB bus power
-Compact and light weight
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MPPC Module block
diagram
Power ( Use USB bus power )
Output-3 ( pulse calculation value)
BUS line
Output-1 ( analog out )
Output-2 ( comparator out )
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Characteristics(analog output)
PC
USB
Measurement
C10507-11-025U
HAMAMATSU
C10507-11-050U
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Characteristics(temperature
stability of Gain)
G ain tem perature characteristics
10
Temperature stability of gain（％）
8
6
4
2
0
-2
-4
-6
-8
-10
-30deg
-20deg
-10deg
0deg
10deg
20deg
T em perature（
℃）
HAMAMATSU
30deg
40deg
50deg
60deg
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Fully-depleted thick backilluminated CCD
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Subaru Telescope
山頂観測所
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Target
• Collaboration with National Astronomical Observatory of
Japan for a next generation instrument for Subaru
• Telescope：a very wide-field CCD camera which named
Hyper Suprime Camera(HSC).
• The CCD format： 4 side buttable, 2k×4k 15um square
pixels with 4 low noise output amplifiers.
• QE Require
– 400nm 60%
– 700nm 85%
– 1000nm 60%
– 900nm 95%
• 10e- rms at 1MHz HAMAMATSU
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UV-NIR, X-ray Absorption Efficiency
Absorption Length [mm]
UV-IR Light
1000
X-ray
100
10
1
0.1
200
400
600
800
Wavelength [nm]
0.01
0.1 2 4
1000
HAMAMATSU
6 8 10 12 14 16 18 20
Energy [keV]
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CCD fabrication Technology
• Standard front processing through about 10 masking steps
– 6inch process line
• Conventional CCD fabrication technology except N-type highresistivity silicon
– 3 layer polysilicon
• After front process, wafers are sent out for backgrinding and
backpolishing
– The wafer are thinned 600um to 200-300um.
• Active accumulation and deposition of antireflection coating
• Front metallization process
• Dicing and Assembly
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CCD Structure and Format
2048+64
2048 (512x4 )
P2V I
P3V I
2048+16
mage
I
A rea
(15u
mx15u
mx2048x2112 )
P1V I
S to rage A rea
(15u
mx15u
mx2048x2064
～14 .5u
mx15u
mx2048x48 )
P1VS
P2VS
48
P3VS
TG
Ch ip
Base
GND4
OS4
OD4
RG4
OG4
SG4
P4H4
P3H4
P2H4
P1H4
P1H3
P2H3
P3H3
P4H3
SG3
OG3
RG3
OD3
OS3
GND3
GND2
OS2
OD2
RG2
OG2
SG2
P4H2
P3H2
P2H2
P1H2
P1H1
P2H1
P3H1
P4H1
SG1
OG1
RG1
OD1
OS1
GND1
Tm
i ing 1
Tm
i ing 2
Tm
i ing 3
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Specification and evaluation results
CCD Structure
FFT or FT
Pixel size
Number of active pixels
Vertical clock phase
Horizontal clock phase
15um square
2048(H)x4096(V) or 2048(V)
3phases
2phases or 4phases
Output
Package
CTE
One stage MOSFET SF 4ch
Aluminum Nitride
>0.999995
Full well capacity
Dark
CCE
Readout noise
>150ke<5e-/pixel/hour
5uV/e<5e- at 130kHz
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2k4k BICCD assembly
technology
The 2k x 4k pixels 4 side
buttable CCD
The size is 31.54mm x
66.825mm
66Pins
On-PKG Pre-Amplifier ,
Thermistor
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4 side buttabletechnology(3x3 chips)
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Good surface flatness
60
0
3000
6000
9000
12000
15000
Y [um]
18000
21000
24000
27000
40
30
20
10
HAMAMATSU
60000
58000
56000
54000
52000
48000
50000
46000
44000
42000
40000
36000
X [um]
38000
0
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
22000
24000
26000
28000
30000
32000
34000
Z [um]
50
50-60
40-50
30-40
20-30
10-20
0-10
30000
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Improvement of cosmetics
& dark image
1st trial
Small format
CCD
24umx512x512
300e-/pixel/s at 20oC
Prototype
Small format CCD
24umx51512
300e-/pixel/s at 20oC
HAMAMATSU
Large format CCD
15umx2kx4k
2-4e-/pixel/hour at 100oC
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1
Quantum efficiency at
o
-100 C
Quantum efficiency
0.8
0.6
Fully-depleted Thick BICCD (-100degee)
Conventional BTCCD (RT)
Conventional FICCD (RT)
0.4
0.2
0
300
400
500
600
700
800
Wavelength(nm)
HAMAMATSU
900
1000
1100
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Evaluation results
・Good Charge Transfer efficiency
・Large full-well capacity
>150Ke
・High charge conversion efficiency
・Low dark
・Low noise
>0.999995
5uV/e
<5e/pixel/hour at -100℃
<5e at 130kHz readout,-100℃
・High near-infrared QE
40% at 1000nm
・Good surface flatness 15-20um
Due to the new process factory of Hamamatsu, the CCD
has the good cosmetics. These results are promising for
HSC which requires more than 100 CCDs.
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10 Billion Pixels CCD Camera
Hyper Suprime Camera
Suprime-Camera
800mm
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Hyper Suprime Camera /
Subaru Hyper
NAOJ
Suprime Camera
Courtesy to NAOJ
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www.hamamatsu.com
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