Survey
* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project
Download Slide 1
Document related concepts
no text concepts found
Transcript
Overview • Obtain calibrated TCAD Sentaurus models as an approximation for Atomistic simulations of UTB Homojunction and Heterojunction TFETs • TCAD models are approximations, based on dynamic non-local band2band tunneling model in TCAD Sentaurus • The effective band-gap for a material due to structural quantization can be estimated using nextnano InSb UTB Homojunction TFET “Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures”, Mathieu Luisier and Gerhard Klimeck, IEDM 2009 GaSb-InAs UTB Heterojunction TFET “Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures”, Mathieu Luisier and Gerhard Klimeck, IEDM 2009 InAs UTB Homojunction TFET “Comparison of Performance, Switching Energy and Process Variations for the TFET and MOSFET in Logic”, Uygar E. Avci, Rafael Rios, Kelin Kuhn, Ian A. Young, VLSI Symposium 2011.
Related documents