Download Experimental submit in 0.13um CMOS.

Development of the Bandgap Voltage
Reference Circuit, Featuring DynamicThreshold MOS Transistors (DTMOSTs)
in 0.13um CMOS Technology .
Vladimir Gromov
Group of microelectronics
NIKHEF, Amsterdam,
the Netherlands
Highlights:
1. The 0.13um CMOS Technology.
2. Implementation of Voltage Bandgap
Reference in the 0.13um CMOS Technology.
3. Dynamic-Threshold MOS Transistors
(DTMOST) structure. Features,
characterization, modeling.
4. Circuit submitted in the experimental run.
5. Conclusions.
Features of the 0.13um CMOS Technology in respect to the
0.25um CMOS .
•
Reduced physical
thickness of the gate
oxide.
•
•
Fine pitch of lithography.
•
•
Supports many metal
layers.
Support a wide range of
new devices of which
Triple-well NFET, and
high-quality resistors are
the most important.
High production cost.
•
•
•
Reduced power supply
voltage Vdd=1.2V.
Devices in this process are extremely robust to
radiation damages (there is no need for the gatearound geometries). Standard commercial libraries
cells become suitable for our applications.
Allows to reduce areas of the devices as to design
high-speed high-integrated circuits.
•
Easies wiring on the design .
•
Let us reduce substrate noise and make the design
much more robust in the mixed-signal environment.
.
•
Some conventional circuits do not fit into the
reduced power rails.
Voltage Reference Circuit.
• Requirements:
• The reference voltage must be insensitive to
temperature variations.
• The reference voltage must be insensitive to
the power supply voltage variations.
• The reference voltage must be insensitive to
the fabrication process variations.
Classical voltage summing Bandgap Reference .
Vdd
Vdd
Vref
KR
PTAT
I
I
R
CTAT
D
1.161
nD
These diodes are p-diffusion
in N-well structures.
1.5
Vdd=1.2V
1.12V

6
V1 5 10  T  1
Vg(T=0)=Eg(T=0)/e=1.12V,
1

Where Eg(T)Tis0.002
energy gap
between Conduction
6Band and
V1 5 10  T  1
T 0.0013
Valence Band in silicon.
0.5
0
0
0
0
50
100
150
200
T
250
300
350
400
400
Principle of operation of the Bandgap Reference circuit.
Diode current-to-voltage characteristics are Shockley equations.
Vdd
Vdd
I2(V,T)=Io(T)*[exp(V *e/kT) –1]
I1(V,T)=n Io(T)*[exp(V *e/kT) –1]
Vref
10
5
KR
I
I
V2-V1
D
V
nD
D
I2
I1
R
0
V2
V
8
I( v  Tnom )I1,
I2
6
5 10
I( v  Tnom )
0
0.5
0.55
0.6
0.65
0.5
n D V1
0.7
0.75
Vv
0.8
Diode voltage-to-current characteristics are Shockley equations.
V2(I,T)=kT/e*ln[I/Io(T)]
In this architecture I1=I2=I therefore
V1(I,T)=kT/e*ln[I/(n*Io(T))]
ln(A)-ln(B)=ln(A/B)
V2(I,T)-V1(I,T)=kT/e [ln(I/Io(T))- ln(I/(n*Io(T))]=
kT/e * ln(n)
I= [V2(I,T)-V1(I,T)]/R=[kT/e * ln(n)]/R
0.8
V1, V2
V1( i  Tnom  8 )
V1( i  Tnom  1 )
0.7
Current is proportional to absolute
temperature PTAT
0.6 0.6
0
7
1 10
2 10
6
4 10
6 10
6
Ii
6
8 10
6
10
5
Voltage summing Bandgap Reference, featuring
DTMOST structures.
Vdd
Vdd
Vref
KR
PTAT
I
I
R
CTAT
In place of diodes new
structures have been used.
1.5
1.5
Vdd=1.2V
Vg(T=0)=0.43V,
F1( z )
(z
273 ) 0.00072
1
1000
is effective Bandgap voltage
for
(z
273 ) 0.00072
the DTMOST structure.
F1( z )
1000
0.43V
0
0.5
0
0
0
50
100
150
z
200
273
250
300
320
Dynamic-Threshold MOS Transistors
(DTMOST) structure.
Anne-Johan Annema (1999)
Source
Gate
metal +
oxide
Drain
P-diffusion
P-diffusion
Substrate
N-well
contact
Floating N-well (substrate)
2.5 10
5
2 10
5
1.5 10
m4
j2
5
Source
Gate
N well
U
I, A
Conventional
diode structure
DTMOST
structure
m3
j2
1 10
5
Drain
I
5 10
10
6
Uthr DIODE =
650mV
Uthr DTMOST =
200mV
7
0
0.1
0.1
0.2
0.3
0.4
m4  m3
j1
j1
U, Volts
0.5
0.6
0.7
0.8
0.8
Characterization of the DTMOST structures.
Keithley 487
Picoammeter/
voltage source
Heraeus
Temperature
chamber
Heraeus
Thermometer
Experimental
set-up.
The DTMOST’s Current-to-voltage characteristics
at various temperatures.
0.5 10
5
Voltage across the DTMOST at various
currents as a function of temperature.
Temp=80ºC
Temp=70ºC
I,
k80 A
j2
6
4 10
Estimated Bandgap voltage
≈ 410 mV ≈ Reference Voltage
400
k70
j2
U, mV
k60
j2
BG
i1
k50 3 10 6
j2
BG
i  2 300
k40
j2
Temp=0ºC
BG
i3
k30
j2
6
2 10
k20
j2
I=2µA
F1( z )
Linear fits
F2( z )
k10
j2
F3( z )
200
I=1µA
k0
6
j  2 1 10
I=0.5µA
100
10
7
0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.24 0.25 0.26 0.27
0.1
k80
j1
U, Volts
0.27
250
200
150
100
50
BG  BG  BG  z  z  z
i0
i0
i0
Temp, ºC
0
50
100
Characterization of the DTMOST structures
(exponential behaviour).
The DTMOST’s Current-to-voltage characteristics.
2.5 10
1 10
5
4
Exponential fit function
I(U)=37 10-10 [EXP(30 U)-1]
I, A
Conventional
diode configuration
DTMOST
configuration
Region
of
5
exponential
m4
j  (“ideal
2
diode”)
behaviour
m3
j2
100mV ….220mV
1 10
1 10
I,
A
1 10
f( x )
1 10
Exponential fit function
I(U)=30 10-10 [EXP(30 U)-1]
5
DTMOST
6
Exponential
behaviour range
0.1µA…2µA
k20
j2
6
ff( x )
7
10 1 10 7
0
0.01
0.1
0.2
0.3
0.4
m4  m3  x
U
j, Volts
1
j1
0.5
0.6
0.7
0.8
0.8
1 10
7
1 10
8
0.1
0.12
0.14
0.16
0.18
0.2
x
j1
U,k80Volts
0.22
0.24
0.26
0.28
0.3
Modeling of the DTMOST structures in SPECTRE.
// DEVICE 1
//simulator lang=spectre insensitive=yes
.model DTMOST1 diode
+ level=1
isw=0.0000e+00
n=1.34e+00
+ rs=0.000e-00
ik=2.7400e+09
ikp=1.0000e-08
+ ibv=1.0000e-09
trs=1.0000e-03
eg=0.225
+ tnom=0.000e+00
xti=6.6
tlev=1.0000e+00
+ area=1.000e+00
perim=1.00e+00
cjo=7.5000e-15
+ mj=1.0000e+00
vj=3.3000e-01
cjsw=0
+ mjsw=1.000e+00
vjsw=4.3000e-01
is=1.62e-09
+ bv=1.3100e+01
cta=8.0000e-04
ctp=1.0000e-03
+ pta=0.00
ptp=2.0000e-03
fc=0.99
+ tlevc=1.000+00
imax=1e+14 gap1=0 gap2=0
The DTMOST’s Current-to-voltage characteristics.
I, A
k80
j2
k60 4 10
j2
Measured points
6
k40
j2
Results of simulation
in Affirma Spectre
k20
j2
6
3 10
k0
j2
s80
i1
s60 2 10 6
i1
s40
i1
s20
i1
6
1 10
s0
i1
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
k80  k80  k80  k80  k80  s80  s60  s40  s20  s20
j1
j1
j1
j1
j1
i0
i0
i0
i0
i0
U, Volts
Reference voltage (Vref) as a function of temperature.
392.25
Vref≈393mV
393
392
391
UC2
i1
120 IC2
i1
390
Diode model
(CADENCE simulations).
389
388.76 388
0
0
10
20
30
40
i1 10  i1 10
Temp, ºC
50
60
70
80
80
0.21
0.22
The circuit.
Main Specifications
(simulations):
Reference voltage: 393mV
Temperature sensitivity: ±1.5mV (within a
temperature range from 0ºC to 80ºC ).
Shift of the Reference voltage caused by
supply voltage variations: ±0.25mV (if the
supply voltage varies in range from 0.9V to 1.4V ).
Power consumption: 60uW (50uA @1.2V)
Spread of the Reference voltage due to
fabrication process variations: σ=1.2mV.
Occupied area on the chip:250um vs 60um
Layout of the DTMOST structures.
Source
T <1:9>
Gate
N well w=11.7394u
l=600n
nf=1
m=1
Drain
T <1:36>
Source
w=11.7394u
l=600n
nf=1
m=1
N well
Drain
The experimental chip (NIKHEF part).
(the chip was submitted in CuTe2 MPW run on May 10, 2004.)
4-channel
Preamp/Shaper/Buffer
circuit for silicon
microstrip sensors.
Bandgap voltage
Reference, Featuring
DTMOST devices.
The circuit features
conventional NFET
devices.
4-channel
Preamp/Shaper/Buffer
circuit for silicon
microstrip sensors.
The circuit features
Triple-well NFET
devices.
2mm
Conclusions:
•
The 0.13um CMOS Technology provides designers with a wide set of attractive
options, in particular, those who develop electronics to operate in high radiation
environment.
•
The Voltage Bandgap Reference circuit needs revision in order to fit into the reduced
power supply voltage range of the technology.
•
Dynamic-Threshold MOS Transistors (DTMOST) are to replace diodes in the
classical Voltage Bandgap Reference circuit as to be suited for the reduced power
supply range .
•
After characterization and modeling of the DTMOST structures, the circuit was
designed and submitted in CuTe2 MPW run on May 10, 2004 with turnaround time
of 5 months.
Preamplifier
In
Shaper
Gain=1000
Gain=2000
Dummy
Preamplifier
Gain=1000
Out
The
Preamp/Shaper circuit.
Main specifications:
1) Rise time of the output signal:
14ns.
2) ENC (Cd=15pf) : 900e.
3) Charge sensitivity:
100mv/2fC(1MIP).
4) Power consumption: 1.7mW
per channel.
5) Dynamic range: 0…10MIPs.
The charge-sensitive preamplifier.
The Shaper.
Principle of operation of the Bandgap Reference circuit.
Diode current-to-voltage characteristics are Shockley equations.
Vdd
Vdd
I2(V,T)=Io(T)*[exp(V *e/kT) –1]
I1(V,T)=n Io(T)*[exp(V *e/kT) –1]
Vref
10
5
KR
I
I
V2-V1
D
V
nD
D
I2
I1
R
0
V2
V
8
I( v  Tnom )I1,
I2
6
5 10
I( v  Tnom )
0
0.5
0.55
0.6
0.65
0.5
n D V1
0.7
0.75
Vv
0.8
Diode voltage-to-current characteristics are Shockley equations.
V2(I,T)=kT/e*ln[I/Io(T)]
In this architecture I1=I2=I therefore
V1(I,T)=kT/e*ln[I/(n*Io(T))]
ln(A)-ln(B)=ln(A/B)
V2(I,T)-V1(I,T)=kT/e [ln(I/Io(T))- ln(I/(n*Io(T))]=
kT/e * ln(n)
I= [V2(I,T)-V1(I,T)]/R=[kT/e * ln(n)]/R
0.8
V1, V2
V1( i  Tnom  8 )
V1( i  Tnom  1 )
0.7
Current is proportional to absolute
temperature PTAT
0.6 0.6
0
7
1 10
2 10
6
4 10
6 10
6
Ii
6
8 10
6
10
5
»
Content.
Slide#1. Good morning. I am Vladimir Gromov from microelectronics group of NIKHEF, Amsterdam, the Netherlands. I am delighted to be here today to tell you about a
novel circuit proposed by our group. Namely my talk is entitled as “Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS
Transistors (DTMOSTs)in 0.13um CMOS Technology “.
Slide#2. These are highlights of the talk.
I will start with a brief description of the features of the 0.13um technology.
Then I will tell you why it is not easy to implement classical Voltage Bandgap Reference in this Technology.
Further I will tell you about a new device called Dynamic-Threshold MOS Transistors (DTMOST). Features of this device, characterization approach and modeling will be
discussed.
I will demonstrate you a complete Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOSTs) circuit that we submitted in the
experimental MPW run on May 10 2004.
Finally I will draw some conclusions.
Slide#3. Since one year ago we have joined efforts of CERN microelecronics group to start prototyping in a new 0.13um CMOS technology. This technology offers a set of
features attractive for analog designers.
………………………………………………….
Because of the reduced thickness gate oxide isolation does not stand voltage higher than 1.2V. It means that the power supply voltage is limited to 1.2V and any design in
this technology is confined in this dynamic range . Some conventional circuits although do not fit into the reduced power rails. Bandgap voltage reference is one of
them.
Slide#4. Voltage Reference Circuit, in general, is an important building block for many architectures. It is a key component for high quality A/D and D/A converters, it is
often used when a stable bias voltage or power supply source is needed.
A High Quality Reference circuit is to meet the following requirements:
……..
Slide#5.Voltage summing Bandgap Reference is a commonly used architecture in chip design. It consists of two diodes of different sizes (formed by p-diffusion in N-well
structures) , two resistors and an OPAMP to control a pair of identical current sources in the feedback. Operation of the circuit rely on two basic features.
Number one: for a given current voltage drop on a diode is conversely proportional to absolute temperature (CTAT). In the vicinity of the absolute zero temperature it
approaches value called BandGap voltage (1.12V). This value is determined by energy gap between Conduction Band and Valence Band and constitutes a built-in
fundamental in silicon .
Number two: because of the exponential character of the diode’s current-to-voltage characteristics current through the diodes in the architecture is proportional to absolute
temperature.
By summing of the voltage drop on the diode with the current determined voltage drop on the resistor a temperature insensitive reference voltage is delivered when the slopes
of the curve are properly adjusted. The reference voltage gets the value very close to the BandGap voltage.
In 0.13um CMOS technology gap between the reference voltage and the power supply voltage becomes so narrow that voltage left for the current sources is not enough to
keep the transistors in saturation mode. I makes the whole concept to fail.
Slide#6. In 1999 Anne-Johan Annema proposed a new structure to substitute the conventional diode in the Bandgap architecture. It is in fact a p-channel MOS (PMOST)
transistor with gate, drain and substrate contacts connected together. This device behaves similar to a conventional diode with an exception . It needs far lower bias
voltage to operate. In this combination the current sources do not suffer from the shortage of voltage any more.
Slide#7. Let us take a closer look at the new structure. This device can be seen as a PMOST where every change in gate-source voltage makes substrate-source voltage to
change which in turn effects the threshold of the transistor. In other words the signal modulates the threshold that is what we call dynamic-threshold transistor. Drain
current in this device is primarily determined by voltage across the source-substrate junction, which results in an exponential current-to-source characteristics of the
device. The DTMOST’s curve resembles the curve for a conventional diode but shifted in the low-voltage region. That is why we can call it a low-voltage diode.
Another feature of this device is that the matching of the DTMOST's is about twice as good as the matching of PMOSTs of the same size operating at the same current.
Moreover batch-to-batch variations of DTMOST's are about half the value of their PMOST counterparts. Various BGR circuits featuring DTMOST's were successfully
implemented in 0.35µm CMOS technology by engineers from University of Twente in the Netherlands in 1999.
Slide#8. In order to design a complete bandgap reference circuit the DTMOST structures have been characterized and modelled. The current-to-voltage characteristic Id(Vgs)
of the DTMOST's has been measured at various temperatures in a temperature chamber . The DTMOST structures came from an experimental submit in the 0.13µm
CMOS technology. As expected, voltage across the DTMOST is conversely proportional to absolute temperature. By the approximation the line to the low temperature
region the effective bandgap voltage is estimated equal to 410mV.
Slide#9. In contrast to the conventional diode the DTMOST demonstrates exponential current-to-voltage relationship in a restricted region only. This case must be closely
watched in the design of the complete circuit. Current through the diodes must stay within the range (0.1uA…2uA) at any operating temperature.
Slide#10. In order to design complete circuit of the Bandgap Reference a Cadence compatible model is needed. The measurements have been the basis to develop a model
for the DTMOST's in SPECTRE. I took a standard diode model and varied the parameters to find the best fit for the measured points. You may notice discrepancies in
the fitting. Those can cause some inaccuracy in temperature compensation and means are needed to adjust the circuit.
Slide#11. Complete Voltage Bandgap Reference circuit consists of the DTMOST devices, a pair of cascoded current sources and a two-stage operational amplifier. All the
biases needed for operation of the circuit are generated on-chip. For the purpose to find the optimal operation point a set of resistors have been used. The nodes of the
set are connected to the bond pads. By means of jumpers a proper value of the resistor will be chosen . The main specifications of the circuit taken from SPECTRE
simulations are listed here:
Abstract.
A CMOS bandgap reference circuit, featuring dynamic-threshold MOS transistors
(DTMOST's) has been developed in the 0.13um CMOS technology. Insensitive to
temperature and power supply variations this cell is going to be a key component for
high quality A/D and D/A converters. The proposed circuit fits well into the low supplyvoltage range of the current and future deep sub-micron technologies. We have carried
out pre-design characterizations of the DTMOST structures taken from an experimental
submit. Design and specifications of the bandgap voltage reference circuit is
presented. The circuit was submitted in CuTe2 MPW submit in May 2004.