Download BAV19 / 20 / 21 Small Signal Diode B A

BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
VRRM
TA = 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Value
Units
120
200
250
200
V
V
V
mA
1.0
4.0
-65 to +200
A
A
°C
175
°C
Value
Units
BAV19
BAV20
BAV21
IF(AV)
Average Rectified Forward Current
IFSM
Tstg
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
TJ
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
500
mW
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
VR
Breakdown Voltage
VF
Forward Voltage
IR
Reverse Current
Test Conditions
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
CT
Total Capacitance
trr
Reverse Recovery Time
2001 Fairchild Semiconductor Corporation
IR = 100 µA
IR = 100 µA
IR = 100 µA
IF = 100 mA
IF = 200 mA
VR = 100 V
VR = 100 V, TA = 150°C
VR = 150 V
VR = 150 V, TA = 150°C
VR = 200 V
VR = 200 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100Ω
Min
Max
Units
1.0
1.25
100
100
100
100
100
100
5.0
V
V
V
V
V
nA
µA
nA
µA
nA
µA
pF
50
ns
120
200
250
BAV19/20/21, Rev. C
(continued)
Typical Characteristics
50
325
Ta= 25 °°C
Reverse Current, I R [nA]
Reverse Voltage, VR [V]
Ta=25 °C
300
275
40
30
20
10
0
3
5
10
20
30
50
100
55
R everse C urrent, I R [uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
100
R everse Voltage, V R [V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 2. Reverse Current vs Reverse Voltage
IR - 55 to 205 V
100
Ta= 25 °C
Ta= 25 °C
450
Forward Voltage, V R [mV]
Reverse Current, I R [nA]
90
80
70
60
50
40
30
400
350
300
250
20
180
200
220
240
Reverse Voltage, V R [V]
255
1
2
3
5
10
20
30
50
100
Forward Current, IF [uA]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 3. Reverse Current vs Reverse Roltage
IR - 180 to 225 V
Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100uA
1.4
Ta= 25 °C
°
Ta= 25 C
700
Forward Voltage, VF [mV]
Forward Voltage, V F [mV]
1.3
650
600
550
500
1.2
1.1
1.0
0.9
0.8
0.7
450
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I F [mA]
Figure 5. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
10
20
30
50
100
200
300
500
800
Forward Current, IF [mA]
Figure 6. Forward Voltage vs Forward Current
VF - 10 to 800mA
BAV19/20/21, Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
(continued)
Typical Characteristics
(continued)
1.3
900
Ta= 25 °C
Total Capacitance [pF]
Forward Voltage, VF [mV]
800
Ta= -40°°C
700
600
Ta= 25 ° C
500
400
Ta= +80 ° C
300
1.2
1.1
1.0
0.9
200
100
0.001
0.003
0.01
0.03
0.1
0.3
1
3
0.8
10
0
F orw ard C urrent, I F [m A ]
4
6
8
10
12
14
Reverse Voltage [V]
Figure 7. Forward Voltage
vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
Figure 8. Total Capacitance
50
400
300
Current [mA]
40
30
IF
200
(A V
)
-A
V
100
ER
AG
ER
E
CT
IF I E
DC
U
RR
EN
I F = I R = 30 mA
Rloop = 100 Ohms
20
1.0
1.5
2.0
2.5
TmA
0
3.0
0
Reverse Recovery Current, I rr [mA]
50
100
150
Ambient Temperature, T A [ C]
Figure 10. Average Rectified Current (IF(AV))
versus Ambient Temperature (TA)
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current
500
Power Dissipation, PD [mW]
Reverse Recovery Time [nS]
2
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average Temperature, IO [ C]
Figure 11. Power Derating Curve
BAV19/20/21, Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Full Production
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4