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Table 6.1 Voltage and current in the common source amplifier of Fig. 6.34a.
VDD = 18 V and RD = 2000.
vgs
VGS
IDS
id
VDS = VDD–IDSRD
vds
Voltage Comment
(V)
(V)
(mA) (mA)
(V)
(V)
Gain
0
–1.5
4.9
0
8.2
0
–0.5
–2.0
3.6
–1.3
10.8
+2.6
–5.2
Point A
+0.5
–1.0
6.4
+1.5
5.2
–3.0
–6
Point B
dc Conditions, Point Q.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)
http://Materials.Usask.Ca
Table 6.2 Selected LED semiconductor materials. Optical communication
channels are at 850 nm (local network) and at 1.3 and 1.55 m (long distance). D
= direct, I = Indirect band gap. DH = Double heterostructure. external is typical and
may vary substantially depending on the device structure.
Semiconductor
D or I
 (nm)
external (%)
Comment
GaAs
D
870 - 900
10
Infrared LEDs
AlxGa1-x As
(0< x < 0.4)
In1-xGaxAsyP1-y
(y  2.20x, 0 < x < 0.47)
D
640 - 870
5 - 20
Red to IR LEDs. DH
D
1 - 1.6 m
> 10
LEDs in communications
InGaN alloys
D
SiC
I
430 - 460
500 - 530
460 - 470
2
3
0.02
Blue LED
Green LED
Blue LED. Low efficiency
In0.49Alx Ga0.51-x P
D
590 - 630
1 - 10
Amber, green red LEDs
GaAs1-yPy (y < 0.45)
D
630 - 870
<1
Red - IR
GaAs1-yPy (y > 0.45)
(N or Zn, O doping)
I
560 - 700
<1
Red, orange, yellow LEDs
GaP (Zn-O)
I
700
2-3
Red LED
GaP (N)
I
565
<1
Green LED
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)
http://Materials.Usask.Ca