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ELEC 5970-001/6970-001(Fall 2005) Special Topics in Electrical Engineering Low-Power Design of Electronic Circuits Power Consumption in a Memory Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering Auburn University http://www.eng.auburn.edu/~vagrawal [email protected] 11/03/05 ELEC 5970-001/6970-001 Lecture 18 1 Intuitive Architecture M bits Word 0 Word 1 Word 2 Storage cell N words S0 SN-1 Word N-2 Word N-1 Input-Output (M bits) 11/03/05 ELEC 5970-001/6970-001 Lecture 18 2 Memory Organization 2L-K Bit line Storage cell AK AK-1 Word line AL-1 M.2K Sense amplifiers/drivers A0 AK-1 Column decoder Input-Output (M bits) 11/03/05 ELEC 5970-001/6970-001 Lecture 18 3 Cell Array Power Management • Smaller transistors • Low supply voltage • Lower voltage swing (0.1V – 0.3V for SRAM) – Sense amplifier restores the full voltage swing for outside use. 11/03/05 ELEC 5970-001/6970-001 Lecture 18 4 Sense Amplifier VDD bit Sense ampl. enable: Low when bit lines are precharged and equalized 11/03/05 bit Full voltage swing output SE ELEC 5970-001/6970-001 Lecture 18 5 SRAM Cell VDD Precharge circuit PC EQ WL BL BL Output bit 11/03/05 Sense amplifier bit ELEC 5970-001/6970-001 Lecture 18 6 Hierarchical Organization Block 0 Block 1 Block P-1 Row addr. Column addr. Block addr. Global data bus Control circuitry Global amplifier/driver Block selector I/O 11/03/05 ELEC 5970-001/6970-001 Lecture 18 7 Power Saving • Block-oriented memory – Lengths of local word and bit lines are kept small. – Block address is used to activate the addressed block. – Unaddressed blocks are put in power-saving mode; sense amplifier and row/column decoders are disabled. Power is maintained for data retention. 11/03/05 ELEC 5970-001/6970-001 Lecture 18 8 1.3μ 8-kbit SRAM 1.1μ 900n 0.13μ CMOS 700n 500n 300n 0.18μ CMOS 100n 0.0 11/03/05 7x increase Leakage current (Amperes) Static Power 0.6 1.2 1.8 Supply voltage ELEC 5970-001/6970-001 Lecture 18 9 Adding Resistance in Leakage Path VDD Low-threshold transistor sleep VDD.int SRAM cell array SRAM cell array SRAM cell array VSS.int sleep GND 11/03/05 ELEC 5970-001/6970-001 Lecture 18 10 Lowering Supply Voltage VDD Sleep = 1, data retention mode VDDL= 100mV for 0.13μ CMOS sleep SRAM cell array SRAM cell array SRAM cell array GND 11/03/05 ELEC 5970-001/6970-001 Lecture 18 11 References • K. Itoh, VLSI Memory Chip Design, Springer-Verlag, 2001. • J. M. Rabaey, A. Chandrakasan and B. Nikolić, Digital Integrated Circuits, Upper Saddle River, New Jersey: Pearson Education, Inc., 2003. 11/03/05 ELEC 5970-001/6970-001 Lecture 18 12