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Budapest University of Technology and Economics Department of Electron Devices Preparation for the first midterm test 16 October 2008, in the class (V2 323) http://www.eet.bme.hu Budapest University of Technology and Economics Department of Electron Devices Conditions of the test Time alloacted to the test is 60min. 20 minitues will be allowed to answer 6 short questions. This part of the test will be collected after time elapsed. The answers to the short questions must be given on separate sheets of paper. The answer must be a word, half sentence, a formula or diagram – such that the evaluation of the answer could be straightforward. Passing the test (satisfactory mark – 2): 24 points out of the maximum of 48 points. 08-09-2008 Microelectronics BSc course, Requirements © András Poppe & Vladimír Székely, BME-EET 2008 2 Budapest University of Technology and Economics Department of Electron Devices Example for the test Short questions (2 points/question) 1. What is the formula of the drift current for electrons? 2. What is the formula of the I-V characteristic of an ideal diode? 3. If we increase the reverse voltage of a pn junction, how does the space charge capacitance change? etc. Total of 12 points 08-09-2008 Microelectronics BSc course, Requirements © András Poppe & Vladimír Székely, BME-EET 2008 3 Budapest University of Technology and Economics Department of Electron Devices Example for the test Essay question (24 points) Describe the static conditions of the PN junction! Problem solving (6+6 points = 12 points) In an abrupt Si PN junction the doping concentrations are as follows: Na = 1017/cm3, Nd = 1014/cm3. What is the value of the UD built-in potential of the junction? In case of a reverse voltage of 5V what will be the width of the depletion layer? 08-09-2008 Microelectronics BSc course, Requirements © András Poppe & Vladimír Székely, BME-EET 2008 4