Download mieb 100w1200dpfteh

MIEB 100W1200DPFTEH
Six-Pack
SPT+ IGBT
VCES
=1200V
IC25
= 170A
VCE(sat) typ.= 1.9V
Preliminary data
Part name (Marking on product)
MIEB100W1200DPFTEH
16, 17, 18
30, 31, 32
D1
1
19
D3
T1
5
9
27
28
29
24
25
26
D2
3
T2
4
T5
10
6
2
NTC
20
D5
T3
21
22
23
D4
7
8
T4
E 72873
D6
11
T6
12
13, 14, 15
33, 34, 35
Features:
Application:
Package:
•SPT IGBT technology
•low saturation voltage
•low switching losses
•switching frequency up to 30 kHz
•square RBSOA, no latch up
•high short circuit capability
•positive temperature coefficient for easy parallelling
•MOS input, voltage controlled
•ultra fast free wheeling diodes
•solderable pins for PCB mounting
•space savings
•HiPerFRED™ diode
•AC motor control
•AC servo and robot drives
•power supplies
•designed for wave soldering
•with copper base plate
+
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
201311114
1-7
MIEB 100W1200DPFTEH
Ouput Inverter T1 - T6
Ratings
Symbol
Definitions
Conditions
VCES
collector emitter voltage
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient IC25
IC80
collector current
Ptot
total power dissipation
VCE(sat)
min.
typ.
max.
Unit
1200
V
±20
±30
V
V
TC = 25°C
TC = 80°C
171
119
A
A
TC = 25°C
600
W
collector emitter saturation voltage
(on chip level) 
IC = 100 A; VGE = 15 V
TVJ= 25°C
TVJ=125°C
2.3
2.5
V
V
VGE(th)
gate emitter threshold voltage
IC = 4 mA; VGE = VCE
TVJ= 25°C
ICES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ= 25°C
TVJ=125°C
IGES
gate emitter leakage current
VGE = ±20 V
Cies
input capacitance
VCE = 25 V; VGE = 0 V; f = 1 MHz
7430
pF
QG(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 100 A
750
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH
120
60
480
240
12
10
6
ns
ns
ns
ns
mJ
mJ
mJ
RBSOA
reverse bias safe operating area
VGE = ±15 V; RG = 10 W;
SCSOA
tSC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±10 V;
RG = 3.9 W; non-repetitive
RthJC
RthJH
thermal resistance junction to case
thermal resistance junction to heatsink
(per IGBT)
(IXYS test setup)
TVJ= 25°C
1.9
2.1
5
TVJ=125°C
6
7
V
1.4
6
mA
mA
1
µA
TVJ=125°C
VCEK = 1200 V
200
A
TVJ = 125°C
10
µs
0.21
0.37
K/W
K/W
0.27
Output Inverter D1 - D6
Ratings
Symbol
Definitions
Conditions
max.
Unit
VRRM
max. repetitve reverse voltage
TVJ= 25°C
1200
V
IF25
IF80
forward current
TC = 25°C
TC = 80°C
199
127
A
A
VF
forward voltage
(on chip level) 
IF = 100 A; VGE = 0 V
TVJ= 25°C
TVJ=125°C
2.5
1.8
V
V
Irr
trr
Qrr
Erec
max. reverse recovery current
reverse recovery time
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH; -di/dt = 2300 A/µs
RthJC
RthJH
thermal resistance junction to case
thermal resistance junction to heatsink
(per diode)
(IXYS test setup)
min.
TVJ=125°C
typ.
165
290
18.6
6
0.39
A
ns
µC
mJ
0.3
0.45
K/W
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
201311114
2-7
MIEB 100W1200DPFTEH
Temperature Sensor NTC
Symbol
R25
B25/50
Definitions
resistance
Conditions
Definitions
Conditions
TC = 25°C
min.
4.75
Ratings
typ. max.
5.0
5.25
3375
Unit
kW
K
min.
-40
Ratings
typ. max.
125
150
125
Unit
°C
°C
°C
3000
3600
V~
V~
Module
Symbol
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
VISOL
isolation voltage
CTI
comparative tracking index
Md
mounting torque (M5)
Rpin to chip
see 
dS
dA
creep distance on surface
strike distance through air
-40
IISOL < 1 mA; 50/60 Hz
t = 1 min
t=1s
200
3
6
2.5
mW
12.7
9.6
Weight
mm
mm
300
 VCE = VCE(sat) + 2x Rpin to chip · IC
Nm
g
TC = 25°C unless otherwise stated
Curves are measured on modul level except Fig. 14 to Fig. 17
Equivalent Circuits for Simulation
I
V0
Symbol
V0
R0
V0
R0
R0
Definitions
IGBT
Conditions
T1 - T6
TVJ=150°C
free wheeling diode
D1 - D6
TVJ=150°C
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
min.
Ratings
typ. max.
1.25
13
Unit
V
mW
1.40
3.5
V
mW
201311114
3-7
MIEB 100W1200DPFTEH
Circuit Diagram
16, 17, 18
30, 31, 32
2D Data Matrix
XXX XX-XXXXX
1
19
2
Logo
UL
Part number
YYWWx
Date Code Location
10
6
27
28
29
NTC
20
9
5
24
25
26
21
22
23
3
7
11
4
8
12
Part number
M = Module
I = IGBT
X = XPT
A = standard
150 = Current Rating [A]
W = Six-Pack
1200 = Reverse Voltage [V]
T = NTC
EH = E3-Pack
13, 14, 15
33, 34, 35
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
Ordering
Standard
Part Name
Marking on Product
MIEB100W1200DPFTEH MIEB100W1200DPFTEH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Delivering Mode Base Qty Ordering Code
Box
5
511348
201311114
4-7
MIEB 100W1200DPFTEH
Output Inverter IGBT
300
300
VGE = 15 V
IC
250
250
200
200
IC
TVJ = 25°C
150
TVJ = 125°C
[A]
150
11 V
[A]
100
50
50
0
1
2
3
0
4
9V
0
1
2
VCE [V]
3
4
5
800
1000
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
300
20
250
IC = 100 A
VCE = 600 V
15 V = 900 V
CE
200
IC
13 V
TVJ = 125°C
100
0
VGE = 15 V
17 V
19 V
VGE
150
[A]
10
[V]
100
TVJ = 125°C
0
5
TVJ = 25°C
50
5
6
7
8
9
10
11
12
13
0
14
0
200
400
VGE [V]
600
QG [nC]
Fig. 4 Typ. turn-on gate charge
Fig. 3 Typ. transfer characteristics
160
40
RG = 10 Ω
VCE = 600 V
VGE = ±15 V
30 TVJ = 125°C
td(on)
20
140
120
800
RG = 10 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
15
700
600
100
E
tr
20
[mJ]
80
60
E
[ns]
[mJ]
40
10
Eon
0
500
t
0
td(off)
10
[ns]
300
5
tf
20
Erec(off)
40
80
120
160
200
0
IC [A]
Fig. 5 Typ. turn-on energy & switching times
versus collector current
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
t
400
Eoff
0
0
40
80
120
160
200
200
100
0
IC [A]
Fig. 6 Typ. turn-off energy & switching times
versus collector current
201311114
5-7
MIEB 100W1200DPFTEH
Output Inverter IGBT
20
200
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
15
td (on)
12
10
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
8
t
E
100
Eon
[mJ]
1000
Eoff
150
E
10
1200
tr
[ns]
Erec(on)
6
t
600
[mJ]
[ns]
4
5
400
50
tf
2
0
800
td(off)
0
5
10
15
20
0
25
0
0
5
10
15
20
200
0
25
RG [Ω]
RG [Ω]
Fig. 7 Typ. turn-on energy and switching times
versus gate resistor
Fig. 8 Typ. turn-off energy and switching times
versus gate resistor
0.30
0.25
0.20
ZthJH
0.15
[K/W]
0.10
0.05
0.00
1
10
100
1000
10000
tp [ms]
Fig. 9 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
201311114
6-7
MIEB 100W1200DPFTEH
Output Inverter Diode
300
300
250
250
200
200
600
IF = 100 A
Vr = 600 V
TVJ = 125°C 500
RG =
47 Ω
IF
[A]
4.7 Ω
22 Ω
Irr
10 Ω
150
150
[A]
TVJ = 125°C
100
100
300
trr
Irr
22 Ω
10 Ω
400
trr
[ns]
4.7 Ω
47 Ω
200
TVJ = 25°C
50
50
0
0.0
0.5
1.0
1.5
2.0
2.5
100
0
1000
3.0
1500
Fig. 10 Typ. forward characteristics
150
Irr
Qrr
40
0.4
30
0.3
125
Qrr
Irr
100
[A]
0
3000
Fig. 11 Typ. reverse recovery characteristics
Rg = 10 Ω
Vr = 600 V
TVJ = 125°C
175
2500
diF /dt [A/μs]
VF [V]
200
2000
20
[μC]
75
50
10
ZthJH
0.2
[K/W]
0.1
25
0
0
25
50
75
100
125
150
175
0
200
IF [A]
Fig. 12 Typ. reverse recovery characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
0.0
1
10
100
1000
10000
tp [ms]
Fig. 13 Typ. transient thermal impedance
201311114
7-7