Download MIEB101W1200EH

MIEB 101W1200EH
Six-Pack
SPT+ IGBT
VCES =1200 V
IC25 = 183 A
VCE(sat)= 1.8 V
Part name (Marking on product)
MIEB101W1200EH
13, 21
1
T1
D1
5
2
T2
D2
9
6
T3
D3
10
19
17
15
D4
3
T4
4
D5
7
T5
8
E72873
D6
11
T6
12
14, 20
Features:
Application:
Package:
•SPT IGBT technology
•low saturation voltage
•low switching losses
•square RBSOA, no latch up
•high short circuit capability
•positive temperature coefficient
for easy parallelling
•MOS input, voltage controlled
•SONIC™ free wheeling diode
- fast and soft reverse recovery
- low operation forward voltage
•solderable pins for PCB mounting
•package with copper base plate
•AC motor drives
•Solar inverter
•Medical equipment
•Uninterruptible power supply
•Air-conditioning systems
•Welding equipment
•Switched-mode and
resonant-mode power supplies
•"E3-Pack" standard outline
•Insulated copper base plate
•Soldering pins for PCB mounting
+
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110511a
1-8
MIEB 101W1200EH
Ouput Inverter T1 - T6
Ratings
Symbol
Definitions
Conditions
VCES
collector emitter voltage
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient IC25
IC80
collector current
Ptot
total power dissipation
VCE(sat)
min.
typ.
max.
Unit
1200
V
±20
±30
V
V
TC = 25°C
TC = 80°C
183
128
A
A
TC = 25°C
630
W
collector emitter saturation voltage
(on chip level) 
IC = 100 A; VGE = 15 V
TVJ= 25°C
TVJ=125°C
2.2
2.4
V
V
VGE(th)
gate emitter threshold voltage
IC = 4 mA; VGE = VCE
TVJ= 25°C
ICES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ= 25°C
TVJ=125°C
IGES
gate emitter leakage current
VGE = ±20 V
Cies
input capacitance
VCE = 25 V; VGE = 0 V; f = 1 MHz
7430
pF
QG(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 100 A
750
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH
120
55
460
240
9.5
9.7
4.2
ns
ns
ns
ns
mJ
mJ
mJ
RBSOA
reverse bias safe operating area
VGE = ±15 V; RG = 10 W;
SCSOA
tSC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±10 V;
RG = 3.9 W; non-repetitive
RthJC
thermal resistance junction to case
(per IGBT)
TVJ= 25°C
1.8
2.0
5
TVJ=125°C
6
7
V
0.9
0.3
3
mA
mA
200
nA
TVJ=125°C
VCEK = 1200 V
200
A
TVJ = 125°C
10
µs
0.2
K/W
max.
Unit
Output Inverter D1 - D6
Ratings
Symbol
Definitions
Conditions
min.
VRRM
max. repetitve reverse voltage
TVJ= 25°C
1200
V
IF25
IF80
forward current
TC = 25°C
TC = 80°C
135
90
A
A
VF
forward voltage
(on chip level) 
IF = 100 A; VGE = 0 V
TVJ= 25°C
TVJ=125°C
2.20
2.25
V
V
Irr
trr
Qrr
Erec
max. reverse recovery current
reverse recovery time
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH
RthJC
thermal resistance junction to case
TVJ=125°C
typ.
2.00
1.95
120
330
12.5
4.2
(per diode)
A
ns
µC
mJ
0.4
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110511a
2-8
MIEB 101W1200EH
Module
Symbol
TVJ
TVJM
Tstg
Definitions
operating temperature
max. virtual junction temperature
storage temperature
VISOL
isolation voltage
CTI
comparative tracking index
Md
mounting torque (M5)
Rpin to chip
see 
dS
dA
creep distance on surface
strike distance through air
RthCH
thermal resistance case to heatsink
Conditions
min.
-40
-40
IISOL < 1 mA; 50/60 Hz
Ratings
typ. max.
125
150
125
Unit
°C
°C
°C
3000
3600
V~
V~
t = 1 min
t=1s
200
3
6
1.8
12.7
9.6
with heatsink compound
Weight
 VCE = VCE(sat) + 2x Rpin to chip · IC
Nm
mW
mm
mm
0.1
K/W
300
g
TC = 25°C unless otherwise stated
Curves are measured on modul level except Fig. 14 to Fig. 17
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110511a
3-8
MIEB 101W1200EH
Circuit Diagram
13, 21
2D Data Matrix
FOSS-ID 6 digits
T1
1
D1
5
2
T2
D2
9
6
T3
D3
XXX XX-XXXXX
Logo
10
Part name
19
17
15
D4
T4
3
D5
7
T5
8
4
Prod.Index
Date Code
Part number
M = Module
I = IGBT
E = SPT
B = 2nd Generation
101 = Current Rating [A]
W = Six-Pack
1200 = Reverse Voltage [V]
EH = E3-Pack
D6
11
YYCWx
T6
12
14, 20
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
Ordering
Part Name
Marking on Product
Standard
MIEB101W1200EH
MIEB101W1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Delivering Mode Base Qty Ordering Code
Box
5
509522
20110511a
4-8
MIEB 101W1200EH
Transistor T1 - T6
300
300
VGE = 15 V
IC
250
250
200
200
[A]
100
100
50
9V
50
0
1
2
3
4
0
5
0
1
2
VCE [V]
5
800
1000
20
IC = 100 A
VCE = 600 V
200
15
150
VGE
[A] 100
10
[V]
TVJ = 125°C
50
5
TVJ = 25°C
5
6
7
8
9
10
11
12
0
13
0
200
400
VGE [V]
30
600
QG [nC]
Fig. 4 Typ. turn-on gate charge
Fig. 3 Typ. transfer characteristics
E
4
Fig. 2 Typ. output characteristics
250
0
3
VCE [V]
Fig. 1 Typ. output characteristics
IC
11 V
IC 150
TVJ = 125°C
[A]
0
13 V
TVJ = 125°C
TVJ = 25°C
150
VGE = 15 V
17 V
19 V
150
24
600
25
125
20
500
20
100
16
td(on)
RG = 10 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
15
[mJ]
10
Erec(off)
5
0
tr
Eon
0
20
40
60
80 100 120 140 160 180 200
75
t
E
[ns]
[mJ]
25
4
0
0
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
300
[ns]
8
Fig. 5 Typ. turn-on energy & switching times
versus collector current
400
t
12
50
IC [A]
td(off)
RG = 10 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eoff
0
20
40
60
tf
80 100 120 140 160 180 200
200
100
0
IC [A]
Fig. 6 Typ. turn-off energy & switching times
versus collector current
20110511a
5-8
MIEB 101W1200EH
Transistor T1 - T6
20
15
200
td (on)
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
8
tr
100 t
[ns]
5
800
E 6
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
[mJ] 4
50
Erec(off)
0
5
1000
td(off)
Eoff
150
Eon
0
1200
10
E 10
[mJ]
12
10
2
15
20
25
30
0
35
0
600
400
tf
0
5
10
15
20
25
30
RG [Ω]
Fig. 7 Typ. turn-on energy and switching times
versus gate resistor
Fig. 8 Typ. turn-off energy and switching times
versus gate resistor
© 2011 IXYS All rights reserved
[ns]
200
0
35
RG [Ω]
IXYS reserves the right to change limits, test conditions and dimensions.
t
20110511a
6-8
MIEB 101W1200EH
Diode D1 - D6
300
300
TVJ = 25°C
250
IF
250
600
500
RG = 33 Ω
22 Ω
200
200
Irr
TVJ = 125°C
150
150
[A]
[A]
trr
10 Ω
100
100
400
10 Ω
IF = 100 A
Vr = 600 V
TVJ = 125°C
Irr
3.3
Ω
300
trr
[ns]
200
22 Ω
33 Ω
50
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100
0
1000
4.0
1500
150
Irr
Fig. 10 Typ. reverse recovery characteristics
100
75
50
0.3
Qrr
ZthJC
[µC]
[K/W] 0.2
20
Qrr
Irr
Diode
0.4
30
125
[A]
0.5
40
Rg = 10 Ω
Vr = 600 V
TVJ = 125°C
175
0
3000
2500
diF /dt [A/µs]
VF [V]
Fig. 9 Typ. forward characteristics
200
2000
10
IGBT
0.1
25
0
0
25
50
75
0
100 125 150 175 200 225
0.0
0.001
0.01
Fig. 11 Typ. reverse recovery characteristics
0.1
1
10
tp [s]
IF [A]
Fig. 12 Typ. transient thermal impedance
Ri
IGBT
τi
FRD
Ri
τi
0.003 0.00001
0.015
0.0005
0.010 0.0014
0.04
0.006
0.057 0.021
0.09
0.025
0.130 0.1
0.255 0.125
Fig. 13 Thermal coefficients
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110511a
7-8
MIEB 101W1200EH
Diode D1 - D6
24
160
TVJ = 125°C
VR = 600 V
VR = 600 V
200 A
Irr
Qrr 16
[A]
100 A
[µC] 12
200 A
TVJ = 125°C
140
20
100 A
120
50 A
100
80
50 A
8
60
4
1000
1200
1400
1600
1800
2000
40
1000
2200
1200
1400
1600
1800
2000
2200
diF /dt [A/µs]
diF /dt [A/µs]
Fig. 15 Typ. peak reverse current IRM vs. di/dt
Fig. 14 Typ. reverse recov.charge Qrr vs. di/dt
700
8
200 A
TVJ = 125°C
TVJ = 125°C
600
VR = 600 V
VR = 600 V
6
500
200 A
trr 400
[ns] 300
Erec
[mJ]
100 A
200
100 A
4
50 A
2
50 A
100
0
1000
1200
1400
1600
1800
2000
2200
diF /dt [A/µs]
Fig. 16 Typ. recovery time trr versus di/dt
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
0
1000
1200
1400
1600
1800
2000
2200
diF /dt [A/µs]
Fig. 17 Typ. recovery energy Erec versus di/dt
20110511a
8-8