Survey
* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
IRF640, RF1S640SM Data Sheet Title F64 1S6 SM) bt A, 0V, 80 m, 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.180Ω Formerly developmental type TA17422. Ordering Information anwer OSTs) uthor June 1999 PART NUMBER PACKAGE File Number 1585.5 • 18A, 200V • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speed • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND IRF640 TO-220AB IRF640 RF1S640SM TO-263AB RF1S640 D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A. S eyPackaging rds terJEDEC TO-220AB Corratio NDRAIN (FLANGE) an- JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE wer OSTs, 0AB, 3AB) er () OCI O frk ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640SM Rev. A IRF640, RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) 200 - - Gate Threshold Voltage VGS(TH) VGS = VDS , ID = 250µA 2 - 4 V VDS = Rated BVDSS , VGS = 0V - - 25 µA µA Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 1) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 1) Forward Transconductance (Note 1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) rDS(ON) gfs td(ON) tr td(OFF) VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC - - 250 VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) 18 - - A - - ±100 nA Ω VGS = ± 20V ID = 10A, VGS = 10V (Figures 8, 9) - 0.14 0.18 6.7 10 - S VDD = 100V, ID ≈ 18A, RGS = 9.1Ω , RL = 5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature - 13 21 ns - 50 77 ns - 46 68 ns - 35 54 ns VGS = 10V, ID ≈ 18A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA - 43 64 nC VDS ≥ 10V, ID = 11A (Figure 12) tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 8 - nC - 22 - nC Input Capacitance CISS - 1275 - pF Output Capacitance COSS - 400 - pF Reverse Transfer Capacitance CRSS - 100 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 1 oC/W Internal Drain Inductance LD VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - Measured From the Contact Screw on Tab to Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Free Air Operation, IRF640 - - 62 oC/W RθJA RF1S640SM Mounted on FR-4 Board with Minimum Mounting Pad - - 62 oC/W ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640SM Rev. A IRF640, RF1S640SM Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 2) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN TYP MAX UNITS - - 18 A - - 72 A G S Source to Drain Diode Voltage (Note 2) - - 2.0 V TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 120 240 530 ns QRR TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 1.3 2.8 5.6 µC Reverse Recovery Time Reverse Recovery Charge TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13) trr VSD NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 3.37mH, RG = 25Ω, peak IAS = 18A. Typical Performance Curves Unless Otherwise Specified 20 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 16 12 8 4 0.2 0 0 0 50 100 25 150 50 TC, CASE TEMPERATURE (oC) 75 100 150 125 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC , TRANSIENT THERMAL IMPEDANCE (oC/W) 10 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 PDM t1 t2 SINGLE PULSE 0.001 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1 10 tP , RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640SM Rev. A IRF640, RF1S640SM Typical Performance Curves 1000 Unless Otherwise Specified (Continued) 30 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100 10µs 100µs 10 1ms 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE 1 1 7V 18 12 6V 6 DC 5V 4V 0 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 1000 VGS = 7V 18 VGS = 6V 12 VGS = 5V VGS = 4V 0 0 1.0 2.0 3.0 5.0 4.0 25oC 1 0.1 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 0 0.9 0.6 VGS= 10V VGS = 20V 0 30 45 60 ID , DRAIN CURRENT (A) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ©2001 Fairchild Semiconductor Corporation 75 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) 3.0 1.2 15 10 FIGURE 7. TRANSFER CHARACTERISTICS PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0 60 150oC FIGURE 6. SATURATION CHARACTERISTICS 0.3 48 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 1.5 36 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS ≥ 50V VGS = 10V ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 100 24 6 24 FIGURE 5. OUTPUT CHARACTERISTICS VGS = 8V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 12 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 10V 8V 24 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) TC = 25oC 2.4 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 18A 1.8 1.2 0.6 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRF640, RF1S640SM Rev. A IRF640, RF1S640SM Typical Performance Curves Unless Otherwise Specified (Continued) 3000 1.25 VGS = 0V, f = 1MHz 1.15 1.05 0.95 0.85 1800 CISS 1200 COSS 600 CRSS 0.75 -60 -40 -20 0 20 40 60 80 0 100 120 140 160 10 1 TJ , JUNCTION TEMPERATURE (oC) 15 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 1000 ISD , SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 12 25oC 9 150oC 6 3 0 0 6 12 18 100 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE gfs , TRANSCONDUCTANCE (S) CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 2400 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 150oC 100 25oC 10 1 30 24 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.4 0.8 1.2 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) 0 ID , DRAIN CURRENT (A) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 2.0 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE VGS , GATE TO SOURCE VOLTAGE (V) 20 ID = 28A VDS = 40V 16 VDS = 100V 12 VDS = 160V 8 4 0 0 15 30 45 60 75 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE ©2001 Fairchild Semiconductor Corporation IRF640, RF1S640SM Rev. A IRF640, RF1S640SM Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF640, RF1S640SM Rev. A