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2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are designed for high-speed saturated switching and general purpose applications. 2N2904/2N2905 approved to CECC 50002102, 2N2906/2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) – 60 V V CEO Collector-emitter Voltage (I B = 0) – 40 V V EBO Emitter-base Voltage (I C = 0) IC Pt o t T s t g, T j October 1988 – 5 V – 600 mA 2 N29 05 2 N29 07 0.6 0.4 W W 2 N29 05 2 N29 07 3 1.8 W W – 65 to 200 °C Collector Current Total Power Dissipation at T amb ≤ 25 °C for 2N2 90 4 and for 2N2 90 6 and at T c as e ≤ 25 °C for 2N2 90 4 and for 2N2 90 6 and Storage and Junction Temperature 1/5 2N2904-2N2905-2N2906-2N2907 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2 N29 04 2 N29 05 2N 290 6 2N 290 7 58.3 °C/W 292 °C/W 97.3 °C/W 437.5 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit – 20 – 20 nA µA I CBO Collector Cutoff Current (I E = 0) V CB = – 50 V V CB = – 50 V I CE X Collector Cutoff Current (V BE = 0.5 V) V CE = – 30 V – 50 I BEX Base Cutoff Current (V BE = 0.5 V) V CE = – 30 V – 50 Colllector-base Breakdown Voltage (I E = 0) I C = – 10 µA – 60 V (BR)CE O * Collector-emitter Breakdown Voltage (I B = 0) I C = – 10 mA – 40 V ( BR) Emittter-base Breakdown Voltage (I C = 0) I E = – 10 µA –5 V ( BR) CBO EBO T am b = 150 °C nA nA V V V V CE (s at )* Collector-emitter Saturation Voltage I C = – 150 mA I C = – 500 mA I B = – 15 mA I B = – 50 mA – 0.4 – 1.6 V V VB E (s at )* Base-emitter Saturation Voltage I C = – 150 mA I C = – 500 mA I B = – 16 mA I B = – 50 mA – 1.3 – 2.6 V V DC Current Gain for 2N 290 4 and 2N2 90 6 V CE = – 10 I C = – 0.1 mA I C = – 1 mA V CE = – 10 I C = – 10 mA V CE = – 10 I C = – 150 mA V CE = – 10 I C = – 500 mA V CE = – 10 V V V V V 20 25 35 40 20 for 2N 290 5 and 2N 290 7 V CE = – 10 I C = – 0.1 mA I C = – 1 mA V CE = – 10 I C = – 10 mA V CE = – 10 I C = – 150 mA V CE = – 10 I C = – 500 mA V CE = – 10 V V V V V 35 50 75 100 30 200 h F E* hFE * fT DC Current Gain 300 MHz Transition Frequency I C = – 50 mA f = 100 MHz V CE = – 20 V C EBO Emitter-base Capacitance IC = 0 f = 1 MHz V EB = – 2 V 30 C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = – 10 V 8 td Delay Time I C = – 150 mA I B1 = – 15 mA V CC = – 30 V 10 tr Rise Time I C = – 150 mA I B1 = – 15 mA V CC = – 30 V 40 ts Storage Time I C = – 150 mA V CC = – 6 V I B1 = – I B2 = – 15 mA 80 tf Fall Time I C = – 150 mA V CC = – 6 V I B1 = – I B2 = – 15 mA 30 * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/5 120 pF pF ns ns ns ns 2N2904-2N2905-2N2906-2N2907 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 3/5 2N2904-2N2905-2N2906-2N2907 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 2N2904-2N2905-2N2906-2N2907 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5