Download BC556/BC557/BC558 (PNP)

Plastic-Encapsulate Transistors
BC556/BC557/BC558 (PNP)
FEATURES
• High Voltage
• Complement to BC546,BC547,BC548
1. COLLECTO
2. BASE
3. EMITTER
Maximum Ratings (Ta=25
unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
TO-92
Parameter
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC556
-80
BC557
-50
BC558
-30
BC556
-65
BC557
-45
BC558
-30
Unit
V
V
-5
V
IC
Collector Current-Continuous
-0.1
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance from Junction to Ambient
200
/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
RθJA
GUANGDONG HOTTECH
-55~+150
INDUSTRIAL CO,. LTD.
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Plastic-Encapsulate Transistors
BC556/BC557/BC558
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test
conditions
Min
BC556
Collector-base
BC557
breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
breakdown voltage
-30
-65
V(BR)CEO
Collector cut-off current
V
-45
-30
V(BR)EBO
IE=-100μA,IC=0
-5
V
VCB=-70V,IE=0
-0.1
μA
VCB=-45V,IE=0
-0.1
μA
BC558
VCB=-25V,IE=0
-0.1
μA
BC556
VCE=-60V,IB=0
-0.1
μA
VCE=-40V,IB=0
-0.1
μA
VCE=-25V,IB=0
-0.1
μA
VEB=-5V,IC=0
-0.1
μA
BC556
Collector cut-off current
IC=-2mA,IB=0
BC558
Emitter-base breakdown voltage
BC557
BC557
ICBO
ICEO
BC558
IEBO
Emitter cut-off current
hFE
DC current gain
Collector-emitter saturation voltage
*
VCE(sat)
VBE(sat)
Base-emitter saturation voltage
VBE
Base-emitter voltage
VCE=-5V, IC=-2mA
120
800
IC=-10mA,IB=-0.5mA
-0.3
V
IC=-100mA,IB=-5mA
-0.65
V
IC=-10mA,IB=-0.5mA
-0.8
V
IC=-100mA,IB=-5mA
-1
V
-0.7
V
-0.82
V
6
pF
-0.55
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
Cob
Collector output capacitance
VCB=-10V,IE=0, f=1MHz
BC556
Transition frequency
Unit
V
-50
BC558
BC557
Max
-80
BC556
Collector-emitter
Typ
BC557
fT
VCE=-5V,IC=-10mA, f=100MHz
BC558
150
MHz
150
MHz
150
MHz
CLASSIFICATION of hFE
RANK
RANGE
A
B
110-220
180-460
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
C
420-800
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Plastic-Encapsulate Transistors
BC556/BC557/BC558 Typical Characteristics
1.5
–1.0
TA = 25°C
–0.9
VCE = –10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
VCE(sat) @ IC/IB = 10
–0.1
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
0
–0.1 –0.2
–100 –200
Figure 1. Normalized DC Current Gain
–1.2
IC =
–10 mA
IC = –50 mA
IC = –200 mA
IC = –100 mA
IC = –20 mA
–0.4
–0.02
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
–1.6
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–10 –20
–0.1
–1.0
IB, BASE CURRENT (mA)
–0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 4. Base–Emitter Temperature Coefficient
–20 –30 –40
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
–100
1.0
TA = 25°C
0
–50
Figure 2. “Saturation” and “On” Voltages
–2.0
–0.8
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
400
300
200
150
VCE = –10 V
TA = 25°C
100
80
60
40
30
20
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P4 -P3
Plastic-Encapsulate Transistors
BC556/BC557/BC558 Typical Characteristics
TJ = 25°C
VCE = –5.0 V
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
–1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
VCE(sat) @ IC/IB = 10
0
–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.1 –0.2
–0.5
–50 –100 –200
–1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–2.0
–1.0
–1.6
–1.2
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–0.8
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–10
–5.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
–20
–1.4
–1.8
–2.6
–3.0
–0.2
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–50 –100
Figure 11. Capacitance
GUANGDONG HOTTECH
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 10. Base–Emitter Temperature Coefficient
40
6.0
–55°C to 125°C
–2.2
Figure 9. Collector Saturation Region
20
θVB for VBE
500
VCE = –5.0 V
200
100
50
20
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
INDUSTRIAL CO,. LTD.
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