Download ME4430 V1_0 080708

ME4430
N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
The ME4430 is the N-Channel logic enhancement mode power field
● RDS(ON)≦6mΩ@VGS=10V
effect transistors are produced using high cell density , DMOS trench
● RDS(ON)≦9mΩ@VGS=4.5V
technology. This high density process is especially tailored to
● Super high density cell design for extremely low RDS(ON)
minimize on-state resistance. These devices are particularly suited
● Exceptional on-resistance and maximum DC current
for low voltage application such as cellular phone and notebook
capability
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
APPLICATIONS
a very small outline surface mount package.
● Power Management in Note book
● Battery Powered System
● DC/DC Converter
● Load Switch
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain
TA=25℃
Current( TJ =150℃)*
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation*
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
56
A
2.0
PD
W
1.28
TJ
RθJA
A
11
IDM
Operating Junction Temperature
The *
14
ID
℃
-55 to 150
Typ
50
Max
62.5
℃/W
* The device mounted on 1in2 FR4 board with 2 oz copper
July, 2008-Ver1.0
01
ME4430
N-Channel 30-V(D-S) MOSFET
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
30
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
1
IGSS
Gate Leakage Current
Max
Unit
STATIC
IDSS
Zero Gate Voltage Drain Current
V
3
V
VDS=0V, VGS=±20V
±100
nA
VDS=30V, VGS=0V
1
μA
VDS=30V, VGS=0V
5
TJ=70℃
RDS(ON)
VSD
Drain-Source On-State Resistance
a
VGS=10V, ID= 6.5A
4.5
6
VGS=4.5V, ID= 6.5A
7
9
0.72
1.1
Diode Forward Voltage
IS=2.1A, VGS=0V
Qg
Total Gate Charge(4.5V)
VDS=15V, VGS=4.5V, ID=13A
Qg
Total Gate Charge(10V)
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate-Resistance
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
mΩ
V
DYNAMIC
30
56
nC
VDS=15V, VGS=10V, ID=13A
10
16
2500
VDS=15V, VGS=0V, f=1.0MHz
370
pF
120
VDS=0V, VGS=0V, f=1MHz
1.1
Ω
22
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
34
75
ns
13
Note: a: Pulse test: pulse width＜=300us, duty cycle＜=2％
July, 2008-Ver1.0
02
ME4430
N-Channel 30-V(D-S) MOSFET
Typical Characteristics (TJ =25℃
℃ Noted)
July, 2008-Ver1.0
03
ME4430
N-Channel 30-V(D-S) MOSFET
Typical Characteristics (TJ =25℃
℃ Noted)
July, 2008-Ver1.0
04
ME4430
N-Channel 30-V(D-S) MOSFET
SOP-8 Package Outline
MILLIMETERS
DIM
MIN
MAX
A
1.35
1.75
A1
0.10
0.25
B
0.35
0.49
C
0.18
0.25
D
4.80
5.00
E
3.80
4.00
e
1.27 BSC
H
5.80
6.20
h
0.25
0.50
L
0.40
1.25
θ
0°
7°°
NNote: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
July, 2008-Ver1.0
05