Download Insung Choi

Insung Choi
Ph.D. candidate in Materials Science and Engineering
Korea Advanced Institute of Science and Technology (KAIST)
291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea, 305-701
E-mail: [email protected], [email protected]
Tel: +82-42-350-5343, +82-10-4164-8302
PERSONAL
Date of Birth: August 1st, 1984
Place of Birth: Busan, Republic of Korea
Gender: Male
Citizenship: Republic of Korea
EDUCATION
2010.09 ~ current: Ph. D. in Materials Science and Engineering, KAIST, Republic of Korea
Thesis: Growth Mechanism of Pulsed-Laser Induced Graphitization on SiC surfaces
Advisor: Prof. Keon Jae Lee
2007.03 ~ 2009.02: M. S. in Advanced Device Engineering, UST-ETRI, Republic of Korea
Thesis: Charge Storage Effect on In2O3 Nanowires with Ruthenium Complex Molecules
Advisor: Prof. Hyoyoung Lee (Current position: Professor at SKKU)
2003.03 ~ 2007.02: B. S. in Electrical Engineering, Dong-A University, Republic of Korea
EXPERIENCE
2010.01 ~ 2010.08: Research Assistant, Department of MSE in KAIST
(Project: Thin Film Li-ion Battery)
2007.03 ~ 2009.02: Research Assistant, Electronics and Telecommunications Research
Institute (ETRI)
(Project: Molecular Electronic Device)
1
CURRENT RESEARCH INTERESTS
 Laser Assisted Material Synthesis: Graphene, New Materials
 Light Matter Interaction: Material property engineering
 Analysis of Thermodynamic Effect by Heat Transfer
 Laser Annealing of Semiconducting Materials: Si, Ge, SiC
 Laser Annealing of Piezoelectric Materials: PZT, BTO
RESEARCH EXPERIENCE or SKILLS
1) Laser Processing and System Setup
-308 nm Pulse-XeCl Excimer Laser System: a-Si, a-Ge, SiC, PZT, BTO, Metal, Graphene
-532 nm Pulse-Nd:YAG Laser System: a-Si
-532 nm CW Laser System: a-Si, PZT
-1064 nm Quasi-CW Laser System: Nanoparticle, Metal
-Pulse duration expander (30-300ns)
-Time-resolved optical reflectivity setup: Mechanism analysis of liquid-phase transition
2) Dual-Flash Lamp Annealing System (micro~milli second pulsed duration)
-Ni annealing and Synthesis of Graphene
3) Numerical Simulation for Temperature Analysis by Heat Transfer
4) Micro Fabrication and Inspection Techniques
-Photolithography, Deposition (Evaporator, Sputter, PECVD), Wet/Dry Etching, PDMS
-Characterization tools: XPS, Raman, EBSD, AFM, SEM, Electrical measurements
5) Minor experiences
-Flexible device by Laser Lift Off (Dry transfer) and wet transfer method
-Lithium Ion Thin Film Battery
-Molecular Electronics and Nanowire-based Field Effect Transistor
2
PUBLICATION
1. Insung Choi, Hu Young Jeong, Dae Yool Jung, Myunghwan Byun, Choon-Gi Choi,
Byung Hee Hong, Sung-Yool Choi,* and Keon Jae Lee,* “Laser-Induced Solid-Phase
Doped Graphene, ACS Nano, 2014, 8, 7671-7677.
2. Kwi-il Park, Jung Hwan Son, Geon-Tae Hwang, Chang Kyu Jeong, Jungho Ryu, Min
Koo, Insung Choi, Seung Hyun Lee, Myunghwan Byun, Zhong Lin Wang, and Keon
Jae Lee,* “ Highly-Efficient, Flexible Piezoelectric PZT Thin Film Nanogenerator on
Plastic Substrates”, Advanced Materials, 2014, 26, 2514-2520.
3.
Insung Choi, Junghyun Lee, Gunho Jo, Kyoungja Seo, Nak-Jin Choi, Takhee Lee, and
Hyoyoung Lee,* “Charge Storage Effect on In2O3 Nanowires with Ruthenium
Complex Molecules”, Applied Physics Express, 2009, 2, 015001.
PATENT Holdings
1. Keon Jae Lee and Insung Choi, “Method for manufacturing grapheme using flash
lamp and ion-implantation technology, graphene manufactured by the same,
manufacturing device for the same”, 10-1339417 (2013.12.03), Korea.
2. Keon Jae Lee and Insung Choi, “Method for manufacturing grapheme using laser and
ion-implantation technology, graphene manufactured by the same, manufacturing
device for the same”, 10-1339413 (2013.12.03), Korea.
3. Keon Jae Lee and Insung Choi, “Manufacturing apparatus and method for graphene
using flash ramp, and grapheme semiconductor manufactured by the same”, 101260606 (2013.04.26), Korea.
4. Keon Jae Lee, Insung Choi, Sung-Yool Choi, and Byung Hee Hong, “Method for
improving graphene property, method for manufacturing graphene using the same,
graphene manufactured by the same”, 10-1206136 (2012.11.22), Korea.
5. Keon Jae Lee and Insung Choi, “Manufacturing apparatus and method for graphene
using flash ramp, and graphene manufactured by the same”, 10-1198482 (2012.10.31),
Korea.
6. Keon Jae Lee, Insung Choi, Sung-Yool Choi, and Byung Hee Hong, “Fabrication of
Boron Nitride, semiconductor graphene and graphene transistor using laser”, 101172625 (2012.08.02), Korea.
7. Keon Jae Lee, Insung Choi, Sung-Yool Choi, and Byung Hee Hong, “Method for
manufacturing graphene semiconductor device, graphene semiconductor device
manufactured by the same, graphene transistor comprising the graphene semiconductor
device”, 10-1169538 (2012.07.23), Korea.
8. Keon Jae Lee, Insung Choi, Sung-Yool Choi, and Byung Hee Hong, “Method for
manufacturing graphene, graphene manufactured by the same, manufacturing device
3
for the same”, 10-1127742 (2012.03.09), Korea.
9. Keon Jae Lee, Insung Choi, Sung-Yool Choi, and Byung Hee Hong, “Method for
manufacturing graphene semiconductor device, graphene semiconductor device
manufactured by the same, graphene transistor comprising the graphene semiconductor
device”, 10-1113287 (2012.01.31), Korea.
PRESENTATION
1. Junghwan Park, Insung Choi, Sung-Yool Choi, and Keon Jae Lee, “Synthesis and
Characterization of N-doped Graphene on SiC substrate by Pulsed Laser Annealing”,
International Conference on Electronic Materials and Nanotechnology for Green
Environment (2014.11.16-19, Ramada Plaza Jeju Hotel, Jeju, Korea) - Poster.
2. Insung Choi, Sung-Yool Choi, and Keon Jae Lee, “Solid-Phase Doped Graphene on
SiC substrate using Pulsed Laser Annealing”, The Polymer Society of Korea, Spring
Meeting (2014.4.9-11, Daejeon Convention Center, Daejeon, Korea) - Poster.
3. Insung Choi, Dae Yool Jung, Keon Jae Lee, and Sung-Yool Choi, “Study of Growth
Mechanism of doped Graphene on SiC substrate using XeCl Excimer Laser”, 2013
Materials Research Society, Fall Meeting (2013.12.1-6, Hynes Convention Center,
Boston, MA, USA) - Poster.
4. Insung Choi, Keon Jae Lee, and Sung-Yool Choi, “Synthesis and Study of doped
Graphene on SiC substrate using Pulsed Laser Annealing”, International Symposium
on the Physics of Semiconductor and Applications (2013.7.2-5, Ramada Plaza Jeju
Hotel, Jeju, Korea) - Poster.
5. Insung Choi, Sung-Yool Choi, and Keon Jae Lee, “Synthesis of Epitaxial Graphene
using Pulsed Laser Annealing”, International Conference on Electronic Materials and
Nanotechnology for Green Environment (2012.9.16-19, Ramada Plaza Jeju Hotel, Jeju,
Korea) - Oral Presentation.
6. Insung Choi, Junghyun Lee, Kyoungja Seo, Nak-Jin Choi, Hyoyoung Lee, Gunho Jo,
and Takhee Lee, “Charge Storage Effect of In2O3 Nanowire Transistors Functionalized
with Ruthenium Complex Molecules”, Molecular Electronics and Devices (2008.5.2930, Ajou University, Suwon, Korea) - Poster.
4
REFERENCES
Prof. Keon Jae Lee (Advisor for Ph.D.)
E-mail: [email protected]
Department of Materials Science and Engineering
Korea Advanced Institute of Science and Technology (KAIST)
Daejeon, Republic of Korea
Prof. Sung-Yool Choi (Co-advisor for Ph.D.)
E-mail: [email protected]
Department of Electrical and Engineering and Graphene Research Center
Korea Advanced Institute of Science and Technology (KAIST)
Daejeon, Republic of Korea
Prof. James S. Im (Collaborate with Laser)
E-mail: [email protected]
Department of Applied Physics and Applied Mathematics
Columbia University
New York, USA
Dr. Alexander B. Limanov (Collaborate with Laser)
E-mail: [email protected]
Department of Applied Physics and Applied Mathematics
Columbia University
New York, USA
Prof. Hu Young Jeong (Ph.D. dissertation committee)
E-mail: [email protected]
UNIST Central Research Facilities and Mechanical and Advanced Engineering
Ulsan National Institute of Science and Technology (UNIST)
Ulsan, Republic of Korea
5