Download npn silicon power transistor tip41c

NPN SILICON POWER TRANSISTOR TIP41C
65 W at 25ºC Case Temperature
6A Continuous Collector Current
10A Peak Collector Current
100V Collector-Emitter Voltage
Isolated transistor package available
on request
Custom selections possible
Absolute maximum ratings at 25ºC case temperature (unless otherwise noted)
RATING
SYMBOL
VCBO
VALUE
140
UNIT
V
Collector-Emitter Voltage (Ib=0)
VCEO
100
V
Emitter-base voltage (reverse)
Continuous collector current
Peak collector current (max 300µs, duty cycle 2%)
Continuous base current
Continuous device dissipation at max 25ºC case temperature (see note 1)
Continuous device dissipation at max 25ºC free air temperature (see note 2)
Unclamped inductive load energy (see note 3)
Operating junction temperature range
VEBO
IC
I CM
IB
P tot
P tot
½LIC 2
Tj
V
A
A
A
W
W
mJ
ºC
Storage temperature range
T stg
Lead temperature 3.2 mm from case for 10 seconds
TL
5
6
10
3
65
2
62.5
-65 to
+150
-65 to
+150
250
Collector-Base Voltage (Ie=0)
ºC
ºC
NOTES
1.
2.
3.
Derate linearly to 150ºC case temperature at t he rate of 0.52 W/ºC. This rating is not applicable to isolated packages.
Derate linearly to 150ºC free air temperature at the rate of 16 mW/ºC
This rating is based on the capability of the transistor to operate safely in a circuit of: L=20 mH, IB(on)=40mA,
RBE = 270 ohm, VBE(off) = 0, RS = 0.1 ohm, I CC = 2.5A., duty max 1%.
DRIX SEMICONDUCTOR DATASHEET
NPN SILICON POWER TRANSISTOR TIP41C
Electrical characteristics at 25ºC case temperature
PARAMETER
V(BR)CEO Collector-emitter
ICES
ICEO
IEBO
hFE
VCE(sat)
Vbe
hfe
TEST CONDITIONS
I C = 30 mA
IB = 0
breakdown voltage
VCE = 140V
Collecor-emitter
cut-off current
VCE = 100V
Collector cut-off
current
VEB = 5V
Emitter cut-off
current
VCE = 4V
Forward current
VCE = 4V
transfer ratio
Collector-emitter I B = 600mA
saturation voltage
Vce = 4V
Base-emitter
voltage
Small signal forward VCE = 10V
current transfer ratio
(see note 4)
MIN
TYP
100
120
MAX
UNIT
V
VBE = 0
0.03
400
µA
IB = 0
0.03
700
µA
1
mA
100
60
1.2
1.5
V
1
2
V
MAX
UNIT
1.92
62.5
ºC/W
ºC/W
MAX
UNIT
IC = 0
IC = 300mA
IC = 3A
IC = 6A
(see notes 4 and 5)
(see notes 4 and 5)
IC = 6A
(see notes 4 and 5)
IC = 500mA
f = 1 kHz
30
15
20
NOTES
4.
Measured in pulse mode tp=300µs, duty cycle <2%
5.
To be measured using sense contacts for base and emitter.
Thermal characteristics
PARAMETER
RèJC
RèJA
MIN
TYP
Junction to case thermal resistance
Junction to free air thermal resistance
Resistive-load-switching characteristics at 25ºC case temperature
PARAMETER
TEST CONDITIONS
t on
t off
I C = 1A
VBE(off) = -4 V
Turn-on time
Turn-off time
IB(on) = 100mA
RL = 20 ohm
MIN
IB(off)= -100mA
t P = 20 µs
DRIX SEMICONDUCTOR DATASHEET
TYP
0.3
1
µs
µs