Download Silicon Quantum Dot Devices for Future Electronics

Paper TA-4-1 presented in IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2013),
October 7-9, 2013, National Cheng Kung University, Tainan, Taiwan.
Silicon Quantum Dot Devices for Future Electronics
Shunri Oda, Tokyo Institute of Technology
O-Okayama, Meguro-ku, Tokyo 152-8552, Japan, [email protected]
( invited talk )
Quantum dot structures, where electrons are confined
Electron transport in coupled Si quantum dots prepared by
three-dimensionally in sub-10 nm scale, show characteristics
EB lithography is also investigated in detail. We observed
quite different from conventional bulk structures. Recent
characteristic transport of triple quantum dots [14] and
progress in the fabrication technology of silicon nanostructures
successfully controlled electrostatic coupling of electrons using
has made possible observations of novel electrical and optical
gate electrodes [15]. Precise control of charge states in the
properties of silicon quantum dots, such as single electron
multiple-coupled quantum dots is essential for spin based
tunneling
quantum information processing [16]. We also observed
[1],
ballistic
transport
[2,3],
visible
photo-
luminescence [4] and high-efficiency electron emission [5].
spin-blockade in coupled Si dots [17].
Nanocrystalline silicon (nc-Si) particles with size less than
[1]
10 nm were prepared by VHF plasma-enhanced decomposition
[2]
of silane gas. Pulsed gas plasma processing, in which the
[3]
nucleation and the growth period were controlled precisely,
[4]
was turned out to be effective for the preparation of
monodispersed nanocrystalline silicon particles [6]. High
[5]
density integration and assembly of Si nanodots are
[6]
investigated using solution methods [7,8].
[7]
MOS and NEMS hybrid devices are promising for logic,
memory and sensing applications, since new functions with
[8]
[9]
ultralow power consumption are expected. Further scaling of
NEMS devices may provide novel functions based on unique
[10]
phonon dispersion characteristics in nm-scale.
[11]
We proposed novel memory devices based on Nano
[12]
Electro-Mechanical Systems [9,10]. Mechanical systems are
fast in nano-scale and low-power consumption. An optimized
[13]
NEMS-gate which eliminate the problem of back ground
[14]
charges was designed and studied using accurate 3D calculation
[11]. We also prepared Si nano-bridge transistors with
[15]
suspended channel structures [12] and observed unique
[16]
transport characteristics presumably due to phonons confined in
[17]
nano structures [13].
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