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ON Semiconductor
NPN
TIP140
TIP141*
Darlington Complementary
Silicon Power Transistors
TIP142 *
. . . designed for general–purpose amplifier and low frequency
switching applications.
• High DC Current Gain —
Min hFE = 1000 @ IC
= 5 A, VCE = 4 V
PNP
TIP145
TIP146 *
TIP147 *
• Collector–Emitter Sustaining Voltage — @ 30 mA
•
VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145
80 Vdc (Min) — TIP141, TIP146
100 Vdc (Min) — TIP142, TIP147
Monolithic Construction with Built–In Base–Emitter Shunt Resistor
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MAXIMUM RATINGS
Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
IC
10
15
Adc
Rating
Collector–Emitter Voltage
Collector Current — Continuous
Peak (1)
Base Current — Continuous
IB
0.5
Adc
Total Device Dissipation
@ TC = 25C
PD
125
Watts
TJ, Tstg
–65 to +150
C
Operating and Storage Junction
Temperature Range
*ON Semiconductor Preferred Device
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–100 VOLTS
125 WATTS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
C/W
Thermal Resistance, Case to Ambient
RθJA
35.7
C/W
CASE 340D–02
(1) 5 ms, 10% Duty Cycle.
DARLINGTON SCHEMATICS
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
COLLECTOR
BASE
COLLECTOR
BASE
≈ 8.0 k
≈ 40
≈ 8.0 k
EMITTER
≈ 40
EMITTER
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 4
1
Publication Order Number:
TIP140/D
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
60
80
100
—
—
—
—
—
—
—
—
—
—
—
—
2.0
2.0
2.0
—
—
—
—
—
—
1.0
1.0
1.0
—
—
20
1000
500
—
—
—
—
—
—
—
—
2.0
3.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mA, IB = 0)
VCEO(sus)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Collector Cutoff Current
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Vdc
ICEO
mA
ICBO
Emitter Cutoff Current (VBE = 5.0 V)
mA
IEBO
mA
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
VBE(sat)
—
—
3.5
Vdc
Base–Emitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
VBE(on)
—
—
3.0
Vdc
td
—
0.15
—
µs
tr
—
0.55
—
µs
ts
—
2.5
—
µs
tf
—
2.5
—
µs
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
Rise Time
Storage Time
(VCC = 30 V, IC = 5.0 A,
IB = 20 mA
mA, Duty Cycle 2
2.0%,
0%
IB1 = IB2, RC & RB Varied, TJ = 25C)
25 C)
Fall Time
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
ts
SCOPE
RB
51
0
V1
appox.
-8.0 V
D1
≈ 8.0 k
PNP
NPN
5.0
t, TIME (s)
µ
RC
TUT
V2
approx
+12 V
10
VCC
-30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
≈ 40
2.0
tf
1.0
tr
0.5
+4.0 V
25 µs
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
td @ VBE(off) = 0
0.2
for td and tr, D1 is disconnected
and V2 = 0
0.1
0.2
For NPN test circuit reverse diode and voltage polarities.
Figure 1. Switching Times Test Circuit
0.5
1.0
3.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
http://onsemi.com
2
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
10
20
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
TYPICAL CHARACTERISTICS
NPN
TIP140, TIP141, TIP142
PNP
TIP145, TIP146, TIP147
20,000
TJ = 150°C
TJ = 150°C
100°C
25°C
2000
-55°C
1000
500
100°C
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
5000
7000
25°C
5000
-55°C
3000
2000
VCE = 4.0 V
300
0.5
VCE = 4.0 V
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
7.0
1000
0.5
10
0.7
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
7.0
10
VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
Figure 3. DC Current Gain versus Collector Current
5.0
3.0
2.0
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
-75
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
5.0
3.0
2.0
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
-75
-50
-25
0
25 50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
4.0
3.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 4. Collector–Emitter Saturation Voltage
VCE = 4.0 V
3.2
2.8
2.4
IC = 10 A
2.0
1.6
5.0 A
1.2
0.8
-75
1.0 A
-25
25
75
125
4.0
3.6
3.2
2.8
2.4
IC = 10 A
2.0
1.6
5.0 A
1.2
0.8
-75
175
VCE = 4.0 V
1.0 A
-25
25
75
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Base–Emitter Voltage
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3
125
175
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
ACTIVE–REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP) (mA)
20
10
7.0
5.0
3.0
2.0
dc
TJ = 150°C
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
1.0
0.2
TIP140, 145
TIP141, 146
TIP142, 147
30
50
20
15
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
15
10
7.0
5.0
100 mJ
2.0
1.0
100
Figure 6. Active–Region Safe Operating Area
INPUT
VOLTAGE
COLLECTOR
CURRENT
MPS-U52
INPUT
RBB1
TUT
1.5k
50
RBB2
= 100
100 mH
VCC = 20 V
IC
MONITOR
VBB2 = 0
VBB1 = 10 V
50
Figure 7. Unclamped Inductive Load
VCE MONITOR
50
0.5 1.0
2.0
5.0
10 20
L, UNCLAMPED INDUCTIVE LOAD (mH)
RS = 0.1
w ≈ 7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
1.42 A
VCE(sat)
-20 V
COLLECTOR
VOLTAGE
V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
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4
100
100
70
50
PNP
PNP
NPN
20
10
7.0
5.0
5.0
VCE = 10 V
IC = 1.0 A
TJ = 25°C
PD, POWER DISSIPATION (WATTS)
hfe , SMALL-SIGNAL FORWARD CURRENT
TRANSFER RATIO
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
NPN
2.0
1.0
1.0
2.0
3.0
5.0
f, FREQUENCY (MHz)
7.0
10
4.0
3.0
2.0
1.0
0
0
Figure 9. Magnitude of Common Emitter
Small–Signal Short–Circuit Forward
Current Transfer Ratio
40
80
120
160
TA, FREE-AIR TEMPERATURE (°C)
Figure 10. Free–Air Temperature
Power Derating
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5
200
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
PACKAGE DIMENSIONS
CASE 340D–02
ISSUE E
C
Q
B
U
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
2
3
D
J
H
V
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
STYLE 1:
PIN 1.
2.
3.
4.
G
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6
BASE
COLLECTOR
EMITTER
COLLECTOR
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
Notes
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7
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
ON Semiconductor and
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TIP140/D
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