Download 2SC4834 - B1B.COM

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2SC4834
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min)
·Fast Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Switching regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
3
A
IBM
Base Current-Peak
6
A
PT
Total Power Dissipation
@ TC=25℃
45
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.78
℃/W
isc Website：www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2SC4834
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
At rated Voltage
100
μA
ICEO
Collector Cutoff Current
At rated Voltage
100
μA
IEBO
Emitter Cutoff Current
At rated Voltage
100
μA
hFE-1
DC Current Gain
IC= 4A; VCE= 2V
10
hFE-2
DC Current Gain
IC= 1mA; VCE= 2V
10
Current-Gain—Bandwidth Product
IC= 0.8A; VCE= 10V
fT
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
25
13
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
IC= 4A; IB1=0.8A; IB2= -1.6A;
RL= 37.5Ω; VBB2= 4V
Fall Time
isc Website：www.iscsemi.cn
2
0.3
μs
1.3
μs
0.1
μs