Download MicroGaN GmbH

Investment Information Sheet
History
1997
Preparation of foundation at Ulm University
2002
Foundation - Seed Investment (KfW)
1st customers
2004
2-inch production capacity
2005
Series A Invest (MAZ, TechnoStart, KfW)
2006
4-inch Production Capacity
2007
JEDEC/HTOL Test
1000V Power Device- and
400°C IC-Prototypes
2008
ISO 9001:2000 Certification
Yield Improvement
Device Area Reduction
State of the Art (Performance & Cost) Power Diode Prototype
2009
Series B Invest (TechnoStart, KfW)
6-inch Production Capacity
First 600V 5A Diode Samples
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author's permission. All rights at MicroGaN GmbH.
Mission
MicroGaN – selling Gallium Nitride based
Unique Power Electronic Devices and Circuits (MIC)
Sophisticated Sensors & Actors
MicroGaN – shipping products to
Major semiconductor companies & system vendors
Distributors
MicroGaN – helping customers to
Realize energy efficient clean & intelligent products for improved life quality
Access fast growing markets
Overcome system feasibility limits
MicroGaN solutions provide the entry into
technology of tomorrow at competitive cost
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author's permission. All rights at MicroGaN GmbH.
Product
Green High Power Devices for Energy Efficient Systems
Schottky Diode
Switch
6
AA
A
5555A
Drain Current / A
Diode Current / A
6
4
1.6 V
2
4
2
220mΩ
<100µA
0
-600
-1
0
Diode Voltage / V
1
2
0
0.6 V
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author's permission. All rights at MicroGaN GmbH.
5
10
400
500
400
Drain Source Voltage / V
Product Segments
MicroGaN Product
High Power Diode
(Recovery Diode)
High Power Switch
Integration of Diodes,
Schwitches &
Control Logic
(High Power IC,
Smart IC)
Benefit
Field of Application
Improvement
in Efficiency
&
Miniaturization
of
Surge Protection
Components
Overvoltage Protection
↓
PFC
e.g. Power Supplies
Converter
Inverter
High
Reliability
↓
e.g. Thrust Reverser
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author's permission. All rights at MicroGaN GmbH.
MicroGaN Sensors
Fluid / Gas Sensor
Mechanical Sensor
Operation for > 50 h @ 500°C!
Voltage vs. Deflection @ 100µA
330°C
10
0
9
-100
8
-200
-300
-400
CGas (ppm)
-500
NH3
100
C3H6
OX1
OX2
OX3
H2
NH3
RT
96°C
200°C
300°C
7
6
5
4
3
2
1
50
0
Signal ΔV/V0 (%)
ΔUG (mV)
100
0
0
0
10
20
30
40
Time t (min)
50
60
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author's permission. All rights at MicroGaN GmbH.
2
4
6
8
Deflection d (µm)
10
12
14
Business
Design
Layout
Chip Fab
AlGaN
GaN
Silicon
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author's permission. All rights at MicroGaN GmbH.
Test Lab
Packaging
Supply Chain
MicroGaN GmbH - Domain
111-Si-Wafer
Close cooperation
Design/Layout
Fabrication
GaN-Epitaxy
Testing
Module Development
Sales
Packaging
Testing
SPS, Converter,
Inverter - Development
System
Green Power, Consumer, Industry, Aerospace
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author's permission. All rights at MicroGaN GmbH.
Sales
Sales
MicroGaN Technology Advantages
Surface devices: epitaxial malfunctions are less critical
Simple and robust technology
Multiple wafer sources
Standard and low cost processing technologies
High margin
Diodes and transistors introduced simultaneously
Unique on Market
NO Doping
NO Implantation
One Chip
High Speed Switching diodes and transistors on one chip
Unique on Market
6” wafer size at production start
Prosper prospective
Ampere/€ ↗↗
No body diode – freedom to integrate or to omit
Lower component count, NO recovery current
NO Qrr for Switch
NO Qrr for Diode
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author's permission. All rights at MicroGaN GmbH.
Summary
Developing and selling GaN based power devices, sensors and actuators
Platform GaN technology to address three sectors with one technology
Pad Area
Pad Area
Finger Area
Die Area
3D GaN Technology for highest yield and efficiency
3D GaN outperforms SiC in an ultra efficient PFC rectifier (in simulations)
3D GaN Technology provides HV-IC solutions, solves power density issues
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author's permission. All rights at MicroGaN GmbH.
MicroGaN Cooperation Model
Phase I – Initial Cooperation State
MicroGaN
Business Partner
→ development of processes, concepts
→ feasibility studies
→ fabrication of devices
→ sales & marketing of devices/results
→ specifications & project goals
→ market access / supporting network
→ project cost sharing
Cooperation Contract
→ Specified Project
→ Limited Time
→ Limited Cost
Success of Phase I
→ competitive edge
→ tighten partnership
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author's permission. All rights at MicroGaN GmbH.
MicroGaN Cooperation Model
Phase II – Long Term Cooperation: GaN Market Access for Business Partner
Cooperation
Options
MicroGaN
Business Partner
Strategic
Takeover
GaN Market
GaN Market
Joint
Venture
Vendor
Strategic
Partnership
Devices
Technology, Process,
Feasibility Study, IP
A further use, dissemination or publication of this material is only allowed after pre-approval and along with the
author's permission. All rights at MicroGaN GmbH.
GaN Market
Contact:
Dr. Ertugrul Sönmez
Business Development
Lise-Meitner-Straße 13
D-89081 Ulm / Germany
email:
[email protected]
web:
www.microgan.com
Phone: +49 731 509-4333
Fax:
+49 731 509-4450
Content Confidential. All rights at MicroGaN GmbH.
A further use, dissemination or publication of this material is only allowed after pre-approval and along with the
author's permission. All rights at MicroGaN GmbH.