Download 2N2222 / 2N2222A

2N2222 / 2N2222A
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group
according to its DC current gain. As complementary
type the PNP transistor ST 2N2907 and ST
2N2907A are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Unit
Value
ST 2N2222 ST 2N2222A
Collector Base Voltage
VCBO
60
75
V
Collector Emitter Voltage
VCEO
30
40
V
Emitter Base Voltage
VEBO
5
6
V
Collector Current
IC
600
mA
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
G S P FORM A IS AVAILABLE
C
C
2N2222 / 2N2222A
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
at IC=0.1mA, VCE=10V
hFE
35
-
-
-
at IC=1mA, VCE=10V
hFE
50
-
-
-
at IC=10mA, VCE=10V
hFE
75
-
-
-
DC Current Gain
at IC=150mA, VCE=10V
ST 2N2222
hFE
100
-
300
-
at IC=500mA, VCE=10V
ST
hFE
30
-
-
-
2N2222A
hFE
40
-
-
-
Collector Cutoff Current
ST 2N2222
at VCB=50V
ST
ICBO
-
-
0.01
µA
at VCB=60V
2N2222A
ICBO
-
-
0.01
µA
ST 2N2222
V(BR)CBO
60
-
-
V
ST
V(BR)CBO
75
-
-
V
ST 2N2222
V(BR)CEO
30
-
-
V
ST
V(BR)CEO
40
-
-
V
ST 2N2222
V(BR)EBO
5
-
-
V
ST
V(BR)EBO
6
-
-
V
ST 2N2222
VCE(sat)
-
-
0.4
V
ST
VCE(sat)
-
-
0.3
V
2N2222A
VCE(sat)
-
-
1.6
V
ST 2N2222
VCE(sat)
-
-
1
V
ST 2N2222
VBE(sat)
-
-
1.3
V
ST
VBE(sat)
0.6
-
1.2
V
2N2222A
VBE(sat)
-
-
2.6
V
ST 2N2222
VBE(sat)
-
-
2.0
v
fT
250
-
-
MHz
Cob
-
-
8
pF
Cib
-
-
30
pF
Collector Base Breakdown Voltage
at IC=10µA
Collector Emitter Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=10µA
Collector Saturation Voltage
at IC=150mA, IB=15mA
at IC=500mA, IB=50mA
Base Saturation Voltage
at IC=150mA, IB=15mA
at IC=500mA, IB=50mA
Gain Bandwidth Product
at IC=20mA, VCE=20V, f=100MHz
Collector Output Capacitance
at VCB=10V, f=1MHz
Input Capacitance
at VCB=0.5V, f=1MHz
G S P FORM A IS AVAILABLE
2N2222 / 2N2222A
Figure 1. DC Current Gain
1000
h FE , DC CURRENT GAIN
700
500
o
TJ =125 C
300
200
25o C
100
70
50
-55o C
30
VCE=1.0V
VCE=10V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
100
200
300
500 700 1.0 K
I C, COLLECTOR CURENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturetion Region
1.0
TJ = 25o C
0.8
0.6
10mA
I C=1.0mA
500mA
150mA
0.4
0.2
0
0.005
0.01
0.02
0.03 0.05
0.1
0.2
0.3
0.5
1.0
I B , BASE CURENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 3. Capacitances
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30 50
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
2N2222 / 2N2222A
Figure 4. Current-Gain Bandwidth Product
500
VCE=20V
TJ = 25o C
300
200
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I C, COLLECTOR CURRENT (mA)