Download BU2508DX - Savantic

SavantIC Semiconductor
Product Specification
BU2508DX
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection
circuits of color TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
8
A
ICM
Collector current (Pulse)
15
A
IB
Base current (DC)
4
A
IBM
Base current (Pulse)
6
A
Ptot
Total power dissipation
45
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
BU2508DX
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
700
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=4.5A ;IB=1.12A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=1.7A
1.1
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
227
hFE-1
DC current gain
IC=1A ; VCE=5V
13
hFE-2
DC current gain
IC=4.5A ; VCE=1V
VF
Diode forward voltage
IF=4.5A
CC
Collector capacitance
IE=0 ; VCB=10V;f=1MHz
V
13.5
4
V
mA
7
2.0
2
UNIT
80
V
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU2508DX