Download 2SB817/2SD1047

Ordering number:ENN680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Package Dimensions
unit:mm
2022A
[2SB817/2SD1047]
15.6
14.0
3.2
3.5
4.8
2.0
1.2
15.0
20.0
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of fT on current and excellent
high frequency responce.
2.6
Features
1.3
The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.
1.6
20.0
2.0
0.6
1.0
2
3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
1.4
1
0.6
Specifications
5.45
5.45
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Ratings
Unit
(–)160
V
(–)140
V
VEBO
IC
(–)6
V
(–)12
A
ICP
PC
Collector Dissipation
Conditions
VCBO
VCEO
Junction Temperature
Tj
Storage Temperature
Tstg
(–)15
A
100
W
150
˚C
–40 to +150
˚C
Tc=25˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(–)80V, IE=0
(–)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(–)4V, IC=0
(–)0.1
mA
hFE1
VCE=(–)5V, IC=(–)1A
60*
hFE2
VCE=(–)5V, IC=(–)6A
VCE=(–)5V, IC=(–)1A
20
DC Current Gain
Gain-Bandwidth Product
fT
Output Capacitance
Cob
VCB=(–)10V, f=1MHz
* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
200*
15
MHz
(300)
pF
210
pF
Continued on next page.
Rank
D
E
hFE
60 to 120
100 to 200
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4
2SB817/2SD1047
Continued from preceding page.
Parameter
Symbol
Base-to-Emitter Voltage
VBE
Collector-to-Emitter Saturation Voltage
min
IC=(–)5A, IB=(–)0.5A
Emitter-to-Base Breakdown Voltage
Turn-ON Time
ton
Fall Time
Storage Time
V
2.5
V
V
(–)160
V
(–)140
V
(–)140
V
(–)6
V
See specified Test Circuit
tstg
1.5
(1.1)
See specified Test Circuit
tf
Unit
max
0.6
V(BR)CBO IC=(–)5mA, IE=0
IC=(–)5mA, RBE=∞
V(BR)CEO
IC=(–)50mA, RBE=∞
V(BR)EBO IE=(–)5mA, IC=0
Collector-to-Emitter Breakdown Voltage
typ
VCE=(–)5V, IC=(–)1A
VCE(sat)
Collector-to-Base Breakdown Voltage
Ratings
Conditions
See specified Test Circuit
(0.25)
µs
0.26
µs
(0.53)
µs
0.68
µs
(1.61)
µs
6.88
µs
Switching Time Test Circuit
IB1
OUTPUT
IB2 1Ω
PW=20µs
INPUT
20Ω
200VR
51Ω
VCC=20V
1µF
VBE= --2V
1µF
10IB1= --10IB2=IC=1A
(For PNP, the polarity is reversed.)
IC -- VCE
--10
IC -- VCE
10
A
0m
--120mA
--6
--80mA
--4
--40mA
--20mA
--2
IB=0
0
0
--10
--20
--30
8
A
120m
80mA
6
40mA
4
20mA
2
IB=0
0
--40
0
Collector-to-Emitter Voltage, VCE – V ITR08419
30
--5
--4
--3
--2
--1
40
ITR08420
2SD1047
VCE=5V
6
Collector Current, IC – A
Collector Current, IC – A
20
IC -- VBE
7
2SB817
VCE= --5V
--6
10
Collector-to-Emitter Voltage, VCE – V
IC -- VBE
--7
2SD1047
200mA
160mA
24
--20
A
--160m
Collector Current, IC – A
A
0m
--8
--2
4
Collector Current, IC – A
2SB817
0mA
5
4
3
2
1
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V
--1.4
--1.6
ITR08421
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE – V
1.4
1.6
ITR08422
No.680–2/4
2SB817/2SD1047
f T -- IC
2SB817
VCE= --5V
3
2
10
7
5
3
2
1.0
--0.1
2
3
5
7
2
--1.0
3
5
Collector Current, IC – A
--10
ITR08423
10
7
5
3
2
2
3
5
2
100
2
1.0
3
5
hFE -- IC
2SD1047
VCE=5V
5
3
2
7
5
3
3
2
2
2
3
5
7 --1.0
2
3
5
Collector Current, IC – A
10
0.1
7 --10
2
ITR08425
2
3
5
7
2
1.0
3
5
1000
Output Capacitance, Cob – pF
Output Capacitance, Cob – pF
2SD1047
f=1MHz
f=1MHz
7
5
3
2
100
7
5
3
7
5
3
2
100
7
5
3
2
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB -- V
2
1.0
7
--100
ITR08427
--10
7
5
3
2
--1.0
7
5
3
2
5
7
--1.0
2
3
Collector Current, IC – A
5
7
--10
ITR08429
5
7
10
2
3
5
7
100
ITR08428
VCE(sat) -- IC
2SD1047
IC / IB=10
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2SB817
IC / IB=10
3
3
3
2
2
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
10
ITR08426
Cob -- VCB
2
2SB817
f=1MHz
f=1MHz
1000
7
Collector Current, IC – A
Cob -- VCB
2
--0.1
7
5
--0.1
7
10
ITR08424
100
7
2
--1.0
5
7
DC Current Gain, hFE
3
7
Collector Current, IC – A
2SB817
VCE= --5V
5
DC Current Gain, hFE
2
1000
7
10
--0.1
2SD1047
VCE=5V
3
1.0
0.1
7
hFE -- IC
1000
f T -- IC
5
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
5
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
2
3
5
7
1.0
2
3
Collector Current, IC – A
5
7 10
ITR08430
No.680–3/4
2SB817/2SD1047
VBE(sat) -- IC
3
2
--10
7
5
3
2
--1.0
2
10
7
5
3
2
7
5
--0.1
2
3
5
7
2
--1.0
3
5
Collector Current, IC – A
5
0.1
7
--10
ITR08431
ASO
2
IC=12A
5
DC
3
1m
10
10
ms
0m
s
ope
2
ion
1.0
7
5
3
2SB817 / 2SD1047
(For PNP, minus sign is omitted.)
5
7
10
5
7
2
1.0
3
5
Collector Current, IC – A
7
10
ITR08432
PC -- Tc
100
s
rat
0.1
3
2SB817 / 2SD1047
7
2
2
120
ICP=15A
Collector Dissipation, PC – W
Collector Current, IC – A
2SD1047
IC / IB=10
3
1.0
7
10
VBE(sat) -- IC
5
2SB817
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
2
3
80
60
40
20
0
5
7
100
2
Collector-to-Emitter Voltage, VCE – V ITR08433
0
20
40
60
80
100
120
Case Temperature, Tc – ˚C
140
160
ITR08434
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.680–4/4