Download IL7500BN IL7500BD IZ7500B

IL7500B
PULSE POWER SUPPLY CONTROL CIRCUIT
(functional analogue KA7500B f. «Fairchild Semiconductor»)
Microcircuit IL7500B pulse-width modulation (PWM) and is intended for application in pulse
power sullies.
.
Index N
Key characteristics:
DIP-package
•
•
•
•
•
•
•
•
microcircuit supply voltage from 7 to 40V;
PWM control circuit;
built- in controlled generator;
build-in signal error amplifier;
built-in reference voltage power supply;
adjustable delay time;
independent output transistors with current 200mA;
output stage control circuit for operation in pushpull or single stage
• surge protection;
• operating temperature from minus 25 to plus
85 °C.
16
01
Index D
SO package
16
16
01
01
Application: pulse voltage converters, voltage invertors, pulse stabilizers and power supplies
IL7500BN – 16 – pin plastic DIP package
MS-001BB
IL7500BD – 16 – pin plastic SO package
MS-012AC
Figure 1 Microcircuit designation
I1p
01
16
I2p
I1n
02
15
I2n
FB
03
14
REF
DTC
04
13
C0
CX
05
12
UCC
RX
06
11
C2
GND
07
10
E2
C1
08
09
E1
Figure 2– Designation of pins in package
IL7500B_TS_E_v3 06.05.2013
1
IL7500B
Table 1 – Description of microcircuit pins in package and chip contact pads
Contact pad
no.
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
17 - 20
Pin number
Symbol
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
-
I1p
I1n
FB
DTC
CX
RX
GND
C1
E1
E2
C2
UCC
ОС
REF
I 2n
I2p
-
IL7500B_TS_E_v3 06.05.2013
Description
Input1 non- inverted
Input 1 inverted
Comparator pin
Delay time adjusting pin
Setting capacitor connection pin
Setting resistor connection pin
Common “ground pin
Output transistor 1 collector pin
Output transistor1emitter pin
Output transistor 2 emitter pin
Output transistor 2 collector pin
Voltage supply power pin
Operation mode control input
Reference voltage output
Inverted Input 2
Non- inverted Input 2
Not in use
2
IL7500B
А1, А2 – error amplifiers;
А3 – control of delay time comparator;
А4 – PWM comparator;
А5 – А10 – logic elements;
Т1 – D-trigger;
VT1, VT2 – output transistors
Figure 3 – Microcircuit block diagram
Table 2 Absolute maximum ratings
Symbol
Parameter
UСС
Supply voltage
Output collector
voltage
Output current
Amplifier input voltage
UOC
IОС
UI
Norm
Unit
min
–
max
42
–
42
V
–
-0,3
250
UСС+0,3
mA
V
V
Table 3 – Recommended operating ranges
Symbol
Parameter name
UСС
UOC
IОС
UI
Supply voltage
Input collector voltage
Output current
Amplifier input current
IL7500B_TS_E_v3 06.05.2013
Norm
min
7
–
–
0,3
max
40
40
200
UСС-0,2
Unit
V
V
mA
V
3
IL7500B
Table 4 – Microcircuit electrical parameters (atUСС = 20 V, if otherwise not specified)
Symbol
Parameter name
UREF
Output reference voltage
by pin 14
Uregin
Input adjustment
αUREF
Reference voltage
perature ratio
Uregout
Input adjustment
IOS
tem-
Short circuit current by pin
14
max
IREF = 1 mA
4,75
5,25
UСС = 7÷40 V
-
25
-
-
0,03
IREF = 1÷10 mA
-
15
UREF = 0 V
10
50
mA
6
14
kHz
-
2
%
-
-10
µA
45
-
%
-
3,3
Maximum duty cycle
0
-
Minimum duty cycle
-
4,5
V
СT = 0,01 uF
αf
FC generator frequency
temperature ratio
СT = 0,01 uF
IDTC
Offset input current by pin
04
UCC = 15 V
0 V< UDTC < 5,25 V
Maximum duty factor
UCC = 15 V
UDTC = 0 V
UCO = UREF
Minimum duty cycle
UITH041
UITH042
UITH03
Threshold voltage by pin
04
Threshold voltage by pin
03
RT = 12 kΩ
RT = 12 kΩ
UNit
V
mV
0÷70
RC generator frequency
by pin 04
Ambient
temperature
°С
25±10
-25
85
min
f
D(MAX)
Norm
Measurement
condition
25±10
-25
85
%/°C
mV
V
ISINK
Input current by pin 03
UFB = 0,7 V
0,3
-
mA
UIO
Zero offset input voltage
UFB = 2,5 V
-
10
mV
IIO
Zero offset input voltage
UFB = 2,5 V
-
250
nA
Offset input current
UFB = 2,5 V
-
1,0
µA
IBIAS
IL7500B_TS_E_v3 06.05.2013
4
IL7500B
Table 4 ( cont.)
Symbol
UI
GVO
Parameter
Input voltage
min
max
7 V< UCC < 40 V
-0,3
UСС-2
70
-
300
1200
-
1,3
2,5
Gain factor without feed- 0,5 V< UFB < 3,5 V
back
f1
Single time amplification
frequency
-
UCE(SAT)
Junction saturation voltage
of collector-emitter in circuit with common emitter
UE = 0 V
UCС(SAT)
Norm
Measurement
condition
IC = 200 mA
Ambient
temp.
°С
25±10
-25
85
Unit
V
dB
kHz
V
UС = 15 V
V
Junction saturation voltage
of collector-emitter in emitter repeater circuit
IЕ = -200 mA
-
IC(OFF)
Collector current in ON
state o
UСC = 40 V
UСE = 40 V
-
100
IE(OFF)
Emitter current
state
-
-100
-
10
UСC = 20 V
-
200
ns
UСC = 7; 40 V
-
260
ns
UСC = 20 V
-
200
ns
UСC = 7; 40 V
-
260
ns
UСC = 20 V
-
100
ns
UСC = 7; 40 V
-
130
ns
UСC = 20V
-
100
ns
UСC = 7; 40 V
-
130
ns
ICC
tRCE
tRCE1
tREF
tREF1
tFCE
tFCE1
tFEF
tFEF1
Consumption
standby state
in OFF UСC = UС = 40 V
UE = 0 V
current
in
Output voltage rise time in
circuit with common emitter
Output voltage rise time in
emitter repeater circuit
Output voltage fall time in
circuit with common emitter
Output voltage fall time in
emitter repeater circuit
IL7500B_TS_E_v3 06.05.2013
URX = 5 V
UСC = 15 V
µA
µA
mA
5
IL7500B
VD1 – diode
VT1 - transistor
Figure 4 – Typical Application Diagram
IL7500B_TS_E_v3 06.05.2013
6
IL7500B
D
16
9
E1
8
1
b2
A
E
C
A1
e
α
c
b
L
0,25 (0,010) M
C
Note - Dimension D, E1 does not include flash which should not exceed 0.25 mm (0,010) to side.
D
E1
A
b
min
18,93 6,07

0,36
max
19,43 7,11
5,33
0,56
min
max
0,355
0,240 
b2
e
α
Millimeters
1,14
0
2,54
1,78
15
Inches
0,014 0,045
0,400 0,280 0,210 0,022 0,070
0,1
L
E
c
A1
2,93
7,62
0,20
0,38
3,81
8,26
0,36

0
0,115 0,300 0,008
0,015
15
0,150 0,325 0,014

Figure 5 –DIP-package MS-001BB dimensions
IL7500B_TS_E_v3 06.05.2013
7
IL7500B
Note - Dimensions D, E1 do not include flash which should not exceed 0.25 mm(0.010) to side.
D
E1
A
b
min
9,80 3,80
1,35
0,33
max
10,00 4,00
1,75
0,51
min
max
h
e
α
Millimeters
0,25
0
1,27
0,50
8
Inches
0,386 0,150 0,053 0,013 0,010
0,050
0,394 0,157 0,069 0,020 0,020
L
H
c
A1
0,40
5,80
0,19
0,10
1,27
6,20
0,25
0,25
0
0,016 0,228 0,007
0,004
8
0,050 0,244 0,010
0,010
Figure 6 – SO-package MS-012AC dimensions
IL7500B_TS_E_v3 06.05.2013
8
IL7500B
Technologikal
marking
Chip thickness 0,35 ± 0,02 mm.
Technological marking on chip: IL7500B.
Coordinates of technological marking, mm: left bottom corner х = 0,267, у = 0,408
Figure 7 – Contact pads layout diagram
Table 5 – Coordinates and dimensions of contact pads.
Contact pad number
Coordinates (left bottom corner),mm
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
17
18
19
20
Х
0,109
0,109
0,265
0,452
0,639
0,804
1,209
1,194
1,194
1,194
1,194
0,891
0,709
0,522
0,109
0,109
0,0953
0,0953
0,0953
0,0953
У
0,298
0,169
0,108
0,108
0,108
0,108
0,121
0,275
0,480
0,623
0,828
0,964
0,964
0,964
0,964
0,830
0,721
0,626
0,531
0,436
Notes
1 Coordinates and size of contact pads are shown by layer “Passivation”
2 Dimension of contact pads 01-16 - 0,086 х 0,086 mm, dimension of contact pads
17-20 - 0,060 х 0,056 mm.
Nominal Front Metal Composition, Thickness
Nominal Back Metal Composition, Thickness
IL7500B_TS_E_v3 06.05.2013
Al + 1 % Si
1,4 ± 0,1 m
-
9