Download Trench Gate Design Dual IGBTMOD™ CM150DU-12F

CM150DU-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Dual IGBTMOD™
150 Amperes/600 Volts
A
N
D
P - NUTS (3 TYP)
TC MEASURED POINT
E
C2E1
E2
C1
E2 G2
CM
W
Y
Q (2
PLACES)
F
X
G
F
G1 E1
B
K
M
K
J
R
H (4
PLACES)
T
V
U
T
S
U
C
L
G2
E2
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
RTC
C2E1
C1
E2
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
A
3.70
B
1.89
C
1.18 +0.04/-0.02
D
3.15±0.01
Millimeters
94.0
48.0
30.0 +1.0/-0.5
80.0±0.25
Dimensions
N
P
Q
R
Inches
0.28
M5
Dia. 0.26
0.02
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Millimeters
7.0
M5
6.5 Dia.
4.0
E
F
G
H
J
K
L
0.43
0.16
0.71
0.02
0.53
0.91
0.83
11.0
4.0
18.0
0.5
13.5
23.0
21.2
S
T
U
V
W
X
Y
0.30
0.63
0.10
1.0
0.94
0.51
0.47
7.5
16.0
2.5
25.0
24.0
13.0
12.0
M
0.67
17.0
Z
0.47
12.0
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-12F is a
600V (VCES), 150 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
150
12
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Symbol
CM150DU-12F
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
150
Amperes
ICM
300*
Amperes
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
IE
150
Amperes
IEM
300*
Amperes
Pc
520
Watts
Mounting Torque, M5 Main Terminal
–
40
in-lb
Mounting Torque, M5 Mounting
–
40
in-lb
Weight
–
310
Grams
Viso
2500
Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Symbol
Test Conditions
Min.
Typ.
Max.
ICES
VCE = VCES, VGE = 0V
–
–
1
mA
IGES
VGE = VGES, VCE = 0V
–
–
20
μA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
5
6
7
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 150A, VGE = 15V, Tj = 25°C
–
1.6
2.2
Volts
IC = 150A, VGE = 15V, Tj = 125°C
–
1.6
–
Volts
Total Gate Charge
QG
VCC = 300V, IC = 150A, VGE = 15V
–
930
Emitter-Collector Voltage**
VEC
IE = 150A, VGE = 0V
–
–
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Units
–
2.6
nC
Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Inductive
Turn-on Delay Time
td(on)
Load
Rise Time
tr
Switch
Turn-off Delay Time
Times
Fall Time
Test Conditions
VCE = 10V, VGE = 0V
Min.
Typ.
–
–
Max.
41
Units
nf
–
–
2.7
nf
–
–
1.5
nf
VCC = 300V, IC = 150A,
–
–
120
ns
VGE1 = VGE2 = 15V,
–
–
100
ns
td(off)
RG = 4.2,
–
–
350
ns
tf
Inductive Load
–
–
250
ns
Diode Reverse Recovery Time**
trr
Switching Operation
–
–
150
ns
Diode Reverse Recovery Charge**
Qrr
IE = 150A
–
2.8
–
μC
Min.
Typ.
Max.
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
Rth(j-c)Q
Test Conditions
Per IGBT 1/2 Module, Tc Reference
–
Units
0.24
°C/W
0.47
°C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, Tc Reference
–
–
–
0.16
–
0.035
Point per Outline Drawing
Thermal Resistance, Junction to Case
Rth(j-c)'Q
Per IGBT 1/2 Module,
°C/W
Tc Reference Point Under Chip
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
°C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
250
11
15
10
3
9.5
VGE = 20V
200
9
150
8.5
100
8
50
7.5
0
1
2
3
2
1
0
4
0
100
50
150
200
IC = 60A
0
6
8
10 12 14
16
18 20
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102
101
0
1.0
2.0
3.0
101
100
Coes
100
101
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, VGE
trr
101
101
VCC = 300V
VGE = ±15V
RG = 4.2 Ω
Tj = 25°C
Inductive Load
100
101
102
EMITTER CURRENT, IE, (AMPERES)
100
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Irr
20
IC = 150A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
td(on)
101
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive Load
tr
200 400 600 800 1000 1200 1400
GATE CHARGE, QG, (nC)
100
100
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
102
tf
102
Cres
VGE = 0V
10-1
10-1
4.0
td(off)
Cies
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
IC = 150A
1
0
300
IC = 300A
2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
REVERSE RECOVERY TIME, trr, (ns)
3
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Tj = 25°C
4
4
COLLECTOR-CURRENT, IC, (AMPERES)
103
100
250
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
0
5
VGE = 15V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
300
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
101
100
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
101
Per Unit Base
Rth(j-c) = 0.24°C/W (IGBT)
Rth(j-c) = 0.47°C/W (FWDi)
Single Pulse
TC = 25°C
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3