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HG
Semiconductors
HG RF POWER TRANSISTOR
SD1446
SD1446
ROHS Compliance,Silicon NPN POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS
HF/VHF APPLICATIONS
..
..
..
50 MHz
12.5 VOLTS
EFFICIENCY 55%
COMMON EMITTER
GOLD METALLIZATION
P OUT = 70 W MIN. WITH 10 dB GAIN
.380 4LFL (M113)
epoxy sealed
ORDER CODE
SD1446
BRANDING
SD1446
PIN CONNECTION
DESCRIPTION
The SD1446 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for land
mobile transmitter applications. This device utilizes
emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating
conditions.
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 5C)
S ymb o l
P a ra me t er
V al u e
Uni t
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
3. 5
V
Device Current
12.0
A
Power Dissipation
183
W
TJ
Junction Temperature
+200
5C
T STG
Storage Temperature
− 65 to +150
5C
1.05
5C/W
IC
PDISS
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
November 1992
1/5
Note : Above parameters , ratings , limits and conditions are subject to change．
www.HGSemi.com
Sep. 1998
HG
Semiconductors
HG RF POWER TRANSISTOR
SD1446
ROHS Compliance,Silicon NPN POWER TRANSISTOR
SD1446
ELECTRICAL SPECIFICATIONS (T case = 25 5C)
STATIC
S ymb o l
Value
T e st Co n d i t i o n s
Min.
Typ.
Max.
Unit
BVCBO
IC = 50mA
IE = 0mA
36
—
—
V
BVCES
IC = 100mA
VBE = 0V
36
—
—
V
BVCEO
IC = 50mA
IB = 0mA
18
—
—
V
BVEBO
IE = 10mA
IC = 0mA
3.5
—
—
V
ICES
VCE = 15V
IE = 0mA
—
—
10
mA
hFE
VCE = 5V
IC = 5 A
10
—
—
—
DYNAMIC
S ymb o l
Value
T es t C o n d i t i o n s
Min.
Typ.
Max.
Unit
POUT
f = 50 MHz
PIN = 7 W
VCE = 12.5 V
70
—
—
W
GP
ηc
f = 50 MHz
PIN = 7 W
VCE = 12.5 V
10
—
—
dB
f = 50 MHz
PIN = 7 W
VCE = 12.5 V
—
55
—
%
COB
f = 1 MHz
VCB = 12.5V
—
—
300
pF
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
Note : Above parameters , ratings , limits and conditions are subject to change．
www.HGSemi.com
2/5
Sep. 1998