Download Elementos de Mecatrónica

Optoacoplador (MOC 3011)
•
•
•
•
Son conocidos como optoaisladores o dispositivos de acoplamiento
óptico, basan su funcionamiento en el empleo de un haz de radiación
luminosa para pasar señales de un circuito a otro sin conexión
eléctrica.
Estos dispositivos son muy útiles para
proteger nuestros
microcontroladores.
En general pueden sustituir a los relevadores ya que tienen una
velocidad de conmutación mayor, así como, la ausencia de rebotes.
La gran ventaja de un optoacoplador reside en el aislamiento eléctrico
que puede establecerse entre los circuitos de entrada y salida.
Optoacoplador (MOC 3011)
•
•
El MOC 3011 es un Opto – TRIAC.
Fundamentalmente este dispositivo está formado por una fuente
emisora de luz, y un fotosensor de silicio (TRIAC), que se adapta a la
sensibilidad espectral del emisor luminoso.
Optoacoplador (MOC 3011)
•
Diagrama de conexión de un MOC 3011 con un microcontrolador.
Verificar en el Datasheet
que voltaje soporta el
Diodo emisor.
Optoacoplador (MOC 3011)
Diferentes tipos de Optoacopladores:
•
Fototriac: se compone de un optoacoplador con una etapa de salida
formada por un TRIAC (MOC 3011).
•
Fototransistor: se compone de un optoacoplador con una etapa de
salida formada por un transistor BJT (4N25 y 4N26).
TRIAC
¿Qué es un TRIAC ?
•
•
•
El TRIAC (Triode for Alternative Current) es un dispositivo
semiconductor de tres terminales que se usa para controlar el flujo de
corriente promedio a una carga.
El TRIAC al igual que el tiristor tiene dos estados de funcionamiento:
bloqueo y conducción.
El TRIAC es equivalente a dos tiristores (SCR) conectados en paralelo, su
función es la de interruptor o switch electrónico en corriente alterna
únicamente.
TRIAC
El SCR (Rectificador Controlado de Silicio):
Este es un pequeño dispositivo de tres terminales, que hacen el mismo
trabajo semiconductor de un diodo normal (deja pasar corriente en un
solo sentido), pero con la diferencia de que en éste se puede controlar el
momento en el cual pueden comenzar a pasar los electrones.
TRIAC
•
•
Dado que el TRIAC es un dispositivo bidireccional, no es posible
identificar sus terminales como ánodo y cátodo.
Un TRIAC puede ser activado con una sola señal positiva o negativa en
la compuerta G.
ó
MOC 3011
TRIAC 6071AG
Conexión:
TRIAC
12G
nc
6 5 4
MOC 3011
1 2 3
VDC
220 W
nc
VAC
Order this document
by MOC3010/D
SEMICONDUCTOR TECHNICAL DATA
[IFT = 15 mA Max]
GlobalOptoisolator
" ! !
[IFT = 10 mA Max]
[IFT = 5 mA Max]
(250 Volts Peak)
*Motorola Preferred Device
The MOC3010 Series consists of gallium arsenide infrared emitting diodes,
optically coupled to silicon bilateral switch and are designed for applications
requiring isolated triac triggering, low–current isolated ac switching, high
electrical isolation (to 7500 Vac peak), high detector standoff voltage, small
size, and low cost.
STYLE 6 PLASTIC
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
6
Recommended for 115 Vac(rms) Applications:
• Solenoid/Valve Controls
1
STANDARD THRU HOLE
CASE 730A–04
• Lamp Ballasts
• Interfacing Microprocessors to 115 Vac Peripherals
• Motor Controls
COUPLER SCHEMATIC
• Static ac Power Switch
• Solid State Relays
1
6
2
5
3
4
• Incandescent Lamp Dimmers
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VR
3
Volts
INFRARED EMITTING DIODE
Reverse Voltage
Forward Current — Continuous
IF
60
mA
Total Power Dissipation @ TA = 25°C
Negligible Power in Transistor
Derate above 25°C
PD
100
mW
1.33
mW/°C
1.
2.
3.
4.
5.
ANODE
CATHODE
NC
MAIN TERMINAL
SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
OUTPUT DRIVER
Off–State Output Terminal Voltage
VDRM
250
Volts
Peak Repetitive Surge Current
(PW = 1 ms, 120 pps)
ITSM
1
A
PD
300
4
mW
mW/°C
VISO
7500
Vac(pk)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
330
4.4
mW
mW/°C
Junction Temperature Range
TJ
– 40 to +100
°C
TA
– 40 to +85
°C
Tstg
– 40 to +150
°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 Second Duration)
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
Soldering Temperature (10 s)
TL
260
°C
1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
(Replaces MOC3009/D)
Optoelectronics
Device Data
Motorola
Motorola, Inc.
1995
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage Current
(VR = 3 V)
IR
—
0.05
100
µA
Forward Voltage
(IF = 10 mA)
VF
—
1.15
1.5
Volts
Peak Blocking Current, Either Direction
(Rated VDRM(1))
IDRM
—
10
100
nA
Peak On–State Voltage, Either Direction
(ITM = 100 mA Peak)
VTM
—
1.8
3
Volts
Critical Rate of Rise of Off–State Voltage (Figure 7, Note 2)
dv/dt
—
10
—
V/µs
—
—
—
8
5
3
15
10
5
—
100
—
INPUT LED
OUTPUT DETECTOR (IF = 0 unless otherwise noted)
COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage = 3 V(3))
MOC3010
MOC3011
MOC3012
IFT
Holding Current, Either Direction
IH
1.
2.
3.
3.
mA
µA
Test voltage must be applied within dv/dt rating.
This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load–driving thyristor(s) only.
All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max
IFT (15 mA for MOC3010, 10 mA for MOC3011, 5 mA for MOC3012) and absolute max IF (60 mA).
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
+800
ITM , ON-STATE CURRENT (mA)
VF, FORWARD VOLTAGE (VOLTS)
2
1.8
PULSE ONLY
PULSE OR DC
1.6
1.4
TA = –40°C
25°C
1.2
85°C
1
1
10
100
IF, LED FORWARD CURRENT (mA)
0
–400
–800
1000
Figure 1. LED Forward Voltage versus Forward Current
2
+400
–3
–2
–1
0
1
2
VTM, ON–STATE VOLTAGE (VOLTS)
3
Figure 2. On–State Characteristics
Motorola Optoelectronics Device Data
IFT, NORMALIZED LED TRIGGER CURRENT
1.5
NORMALIZED IFT
1.3
1.1
0.9
0.7
0.5
–40
–20
0
20
40
60
TA, AMBIENT TEMPERATURE (°C)
80
100
Figure 3. Trigger Current versus Temperature
25
NORMALIZED TO:
PWin 100 µs
q
20
15
10
5
0
1
2
5
10
20
PWin, LED TRIGGER WIDTH (µs)
50
100
Figure 4. LED Current Required to Trigger versus
LED Pulse Width
12
STATIC dv/dt
CIRCUIT IN FIGURE 6
dv/dt, STATIC (V/ µs)
10
8
6
4
2
0
25 30
40
50
60
70
80
TA, AMBIENT TEMPERATURE (°C)
90
100
Figure 5. dv/dt versus Temperature
+250
Vdc
PULSE
INPUT
APPLIED VOLTAGE
WAVEFORM
RTEST
1. The mercury wetted relay provides a high speed repeated
pulse to the D.U.T.
2. 100x scope probes are used, to allow high speeds and
voltages.
3. The worst–case condition for static dv/dt is established by
triggering the D.U.T. with a normal LED input current, then
removing the current. The variable RTEST allows the dv/dt to be
gradually increased until the D.U.T. continues to trigger in
response to the applied voltage pulse, even after the LED
current has been removed. The dv/dt is then decreased until
the D.U.T. stops triggering. tRC is measured at this point and
recorded.
R = 10 kΩ
CTEST
MERCURY
WETTED
RELAY
D.U.T.
X100
SCOPE
PROBE
Vmax = 250 V
158 V
ń + 0.63 RCVmax + 158
RC
dv dt
0 VOLTS
t
t
tRC
Figure 6. Static dv/dt Test Circuit
Motorola Optoelectronics Device Data
3
TYPICAL APPLICATION CIRCUITS
NOTE: This optoisolator should not be used to drive a load directly.
It is intended to be a trigger device only. Additional
information on the use of the MOC3010/3011/3012 is
available in Application Note AN–780A.
ZL
RL
VCC Rin
1
2
6
MOC3010
MOC3011
MOC3012
VCC Rin
180
1
120 V
60 Hz
2
4
6
MOC3010
MOC3011
MOC3012
180
0.1 µF
2.4 k
C1
120 V
60 Hz
4
Figure 8. Inductive Load with Sensitive Gate Triac
(IGT
15 mA)
p
Figure 7. Resistive Load
ZL
VCC Rin
1
2
180
6
MOC3010
MOC3011
MOC3012
0.2 µF
1.2 k
120 V
60 Hz
C1
4
Figure 9. Inductive Load with Non–Sensitive Gate Triac
(15 mA
IGT
50 mA)
t
4
t
Motorola Optoelectronics Device Data
PACKAGE DIMENSIONS
–A–
6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4
–B–
1
3
F 4 PL
C
N
–T–
L
K
SEATING
PLANE
J 6 PL
0.13 (0.005)
G
M
E 6 PL
D 6 PL
0.13 (0.005)
M
T A
B
M
M
T B
M
A
M
DIM
A
B
C
D
E
F
G
J
K
L
M
N
M
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.300 BSC
0_
15 _
0.015
0.100
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
7.62 BSC
0_
15 _
0.38
2.54
ANODE
CATHODE
NC
MAIN TERMINAL
SUBSTRATE
MAIN TERMINAL
CASE 730A–04
ISSUE G
–A–
6
4
–B–
1
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
F 4 PL
L
H
C
–T–
G
J
K 6 PL
E 6 PL
0.13 (0.005)
D 6 PL
0.13 (0.005)
M
T A
M
B
M
SEATING
PLANE
T B
M
A
M
CASE 730C–04
ISSUE D
Motorola Optoelectronics Device Data
M
DIM
A
B
C
D
E
F
G
H
J
K
L
S
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.020
0.025
0.008
0.012
0.006
0.035
0.320 BSC
0.332
0.390
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.51
0.63
0.20
0.30
0.16
0.88
8.13 BSC
8.43
9.90
*Consult factory for leadform
option availability
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–A–
6
4
–B–
1
3
L
N
F 4 PL
C
–T–
SEATING
PLANE
G
J
K
DIM
A
B
C
D
E
F
G
J
K
L
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.400
0.425
0.015
0.040
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
10.16
10.80
0.38
1.02
D 6 PL
E 6 PL
0.13 (0.005)
M
T A
M
B
M
*Consult factory for leadform
option availability
CASE 730D–05
ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
◊
*MOC3010/D*
Motorola OptoelectronicsMOC3010/D
Device Data
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full‐wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full‐wave silicon gate controlled solid‐state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
http://onsemi.com
TRIACS
4.0 A RMS, 200 - 600 V
Features
•Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
•Gate Triggering: 4 Mode - 2N6071A, B; 2N6073A, B; 2N6075A, B
•Blocking Voltages to 600 V
•All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•Device Marking: Device Type, e.g., 2N6071A, Date Code
MT2
MT1
G
REAR VIEW
SHOW TAB
3
TO-225
CASE 077
STYLE 5
2 1
MARKING DIAGRAM
1. Cathode
2. Anode
3. Gate
x
y
Y
WW
G
YWW
2N
607xyG
= 1, 3, 5
= A, B
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 8
1
Publication Order Number:
2N6071/D
2N6071A/B Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
*Peak Repetitive Off‐State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
VRRM
*On‐State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
4.0
A
ITSM
30
A
I2t
3.7
A2s
PGM
10
W
PG(AV)
0.5
W
*Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
*Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C)
*Average Gate Power (t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TC = 85°C)
V
200
400
600
VGM
5.0
V
*Operating Junction Temperature Range
TJ
-40 to +110
°C
*Storage Temperature Range
Tstg
-40 to +150
°C
-
8.0
in. lb.
Mounting Torque (6‐32 Screw) (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case‐to‐sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction-to-Case
RqJC
3.5
°C/W
Thermal Resistance, Junction-to-Ambient
RqJA
75
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
*Indicates JEDEC Registered Data.
http://onsemi.com
2
2N6071A/B Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Symbol
Characteristic
Min
Typ
Max
Unit
-
-
10
2
mA
mA
-
-
2
V
-
1.4
2.5
0.2
-
-
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
IDRM,
IRRM
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
*Peak On‐State Voltage (Note 3) (ITM = "6.0 A Peak)
VTM
*Gate Trigger Voltage (Continuous DC), All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = -40°C)
VGT
Gate Non-Trigger Voltage, All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = 110°C)
VGD
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "1 Adc)
TJ = -40°C
TJ = 25°C
IH
Turn‐On Time (ITM = 14 Adc, IGT = 100 mAdc)
tgt
V
V
mA
-
-
30
15
-
1.5
-
ms
QUADRANT
(Maximum Value)
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
Type
IGT @ TJ
I
mA
II
mA
III
mA
IV
mA
2N6071A
2N6073A
2N6075A
+25°C
5
5
5
10
-40°C
20
20
20
30
2N6071B
2N6073B
2N6075B
+25°C
3
3
3
5
-40°C
15
15
15
20
dv/dt(c)
-
5
-
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
*Indicates JEDEC Registered Data.
SAMPLE APPLICATION:
TTL‐SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0V
-VEE
14
MC7400
4
7
VEE = 5.0 V
+
510
W
2N6071A
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn‐on points.
2. Simplified circuitry.
3. Fast turn‐on time for cooler, more efficient and reliable operation.
http://onsemi.com
3
LOAD
115 VAC
60 Hz
2N6071A/B Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
+ Current
Quadrant 1
MainTerminal 2 +
VTM
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 -
+ Voltage
IDRM at VDRM
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
IGT -
+ IGT
(-) MT2
Quadrant III
(-) MT2
Quadrant IV
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
SENSITIVE GATE LOGIC REFERENCE
IC Logic Functions
Firing Quadrant
I
TTL
HTL
CMOS (NAND)
III
2N6071A Series
2N6071A Series
2N6071A Series
2N6071A Series
2N6071B Series
2N6071B Series
2N6071A Series
2N6071A Series
2N6071B Series
IV
2N6071B Series
CMOS (Buffer)
Operational Amplifier
II
2N6071A Series
2N6071A Series
Zero Voltage Switch
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4
2N6071A/B Series
110
110
α = 30°
TC , CASE TEMPERATURE (° C)
TC , CASE TEMPERATURE (° C)
60°
100
α = 30°
60°
90°
90
120°
180°
dc
a
80
α
70
120°
90
180°
a
80
70
1.0
2.0
3.0
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
4.0
α = CONDUCTION ANGLE
0
1.0
2.0
3.0
IT(RMS), RMS ON‐STATE CURRENT (AMP)
Figure 1. Average Current Derating
8.0
a
a
180°
a
6.0
P(AV) , AVERAGE POWER (WATTS)
P(AV) , AVERAGE POWER (WATTS)
4.0
Figure 2. RMS Current Derating
8.0
dc
120°
α = CONDUCTION ANGLE
90°
60°
4.0
α = 30°
2.0
0
dc
a
6.0
α = 180°
α = CONDUCTION ANGLE
120°
4.0
30°
2.0
60°
90°
0
0
1.0
2.0
3.0
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
4.0
1.0
2.0
3.0
IT(RMS), RMS ON‐STATE CURRENT (AMP)
0
Figure 3. Power Dissipation
3.0
OFF‐STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
1.0
0.7
0.5
0.3
-60
-40
-20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
4.0
Figure 4. Power Dissipation
I GT , GATE TRIGGER CURRENT (NORMALIZED)
V GT , GATE TRIGGER VOLTAGE (NORMALIZED)
dc
a
α = CONDUCTION ANGLE
0
90°
100
120
140
3.0
OFF‐STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
1.0
0.7
0.5
0.3
-60
Figure 5. Typical Gate-Trigger Voltage
-40
-20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
120
Figure 6. Typical Gate-Trigger Current
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5
140
2N6071A/B Series
40
IH, HOLDING CURRENT (NORMALIZED)
3.0
30
20
10
ITM , ON‐STATE CURRENT (AMP)
7.0
5.0
2.0
1.0
0.7
0.5
0.3
-60
TJ = 110°C
3.0
GATE OPEN
APPLIES TO EITHER DIRECTION
-40
-20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
2.0
Figure 8. Typical Holding Current
TJ = 25°C
1.0
34
32
PEAK SINE WAVE CURRENT (AMP)
0.7
0.5
0.3
0.2
30
28
26
24
TJ = -40 to +110°C
f = 60 Hz
22
20
18
16
0.1
0
1.0
2.0
3.0
4.0
14
1.0
5.0
2.0
4.0
5.0
7.0
10
NUMBER OF FULL CYCLES
VTM, ON‐STATE VOLTAGE (VOLTS)
Figure 7. Maximum On-State Characteristics
Z θJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W)
3.0
Figure 9. Maximum Allowable Surge Current
10
5.0
MAXIMUM
3.0
2.0
TYPICAL
1.0
0.5
0.3
0.2
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
Figure 10. Thermal Response
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500
1.0 k
2.0 k
5.0 k
10 k
2N6071A/B Series
ORDERING INFORMATION
Device
2N6071A
Package
Shipping†
TO-225
2N6071AG
TO-225
(Pb-Free)
500 Units / Box
2N6071AT
TO-225
50 Units / Tube
2000 Units / Box
TO-225
(Pb-Free)
50 Units / Tube
2000 Units / Box
2N6071ATG
2N6071B
TO-225
2N6071BG
TO-225
(Pb-Free)
500 Units / Box
2N6071BT
TO-225
50 Units / Tube
2000 Units / Box
TO-225
(Pb-Free)
50 Units / Tube
2000 Units / Box
2N6071BTG
2N6073A
2N6073AG
2N6073B
2N6073BG
2N6075A
2N6075AG
2N6075B
2N6075BG
TO-225
TO-225
(Pb-Free)
TO-225
TO-225
(Pb-Free)
TO-225
500 Units / Box
TO-225
(Pb-Free)
TO-225
TO-225
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2N6071A/B Series
PACKAGE DIMENSIONS
TO-225
CASE 77-09
ISSUE Z
-BU
F
Q
-A-
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
STYLE 5:
PIN 1. MT 1
2. MT 2
3. GATE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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2N6071/D