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Not Recommended for New Design
Please Use ZTX457
MPSA42
fT Transition Frequency (MHz)
hFE Static Forward Current Transfer Ratio
140
120
VCE=10V
100
80
60
40
20
0.1
1.0
IC-Collector
10
100
140
VCE=20V
C
100
80
ABSOLUTE MAXIMUM RATINGS.
40
20
0
0.1
IC-Collector Current (mA)
hFE vs IC
fT vs IC
Single Pulse Test at Tamb=25°C
1A
10ms
IC-Collector Current Amps
VCE (sat) Collector-Emitter Saturation Voltage(Volts)
100
10
1.0
IC / IB=10
0.1
0
0.1
1.0
10
100
0.1
D.C.
0.01
0.001
200
1
IC-Collector Current (mA)
10
100
1000
VCE-Collector-Emitter Voltage (Volts)
Safe operating area
VCE(sat) vs IC
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb =25°C
Ptot
680
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1ms
100ms
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
300
V
IC=100µ A, IE=0
V(BR)CEO
300
V
IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
6
V
IE=100µ A, IC=0
Collector Cut-Off
Current
ICBO
0.1
µA
VCB=200V, IE=0
Emitter Cut-Off Current IEBO
0.1
µA
VEB=6V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=20mA, I B=2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, I B=2mA*
Static Forward Current hFE
Transfer Ratio
25
40
40
Transition
Frequency
fT
50
Output Capacitance
Cobo
TYP.
MAX.
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
6
MHz
IC=10mA, VCE=20V
f=20MHz
pF
VCB=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-79
B
E
E-Line
TO92 Compatible
60
Current (mA)
0.2
APPLICATIONS
* Telephone dialler circuit
120
200
0.3
MPSA42
ISSUE 2 – MARCH 94
FEATURES
* High voltage
TYPICAL CHARACTERISTICS
160
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
3-78
Not Recommended for New Design
Please Use ZTX457
MPSA42
fT Transition Frequency (MHz)
hFE Static Forward Current Transfer Ratio
140
120
VCE=10V
100
80
60
40
20
0.1
1.0
IC-Collector
10
100
140
VCE=20V
C
100
80
ABSOLUTE MAXIMUM RATINGS.
40
20
0
0.1
IC-Collector Current (mA)
hFE vs IC
fT vs IC
Single Pulse Test at Tamb=25°C
1A
10ms
IC-Collector Current Amps
VCE (sat) Collector-Emitter Saturation Voltage(Volts)
100
10
1.0
IC / IB=10
0.1
0
0.1
1.0
10
100
0.1
D.C.
0.01
0.001
200
1
IC-Collector Current (mA)
10
100
1000
VCE-Collector-Emitter Voltage (Volts)
Safe operating area
VCE(sat) vs IC
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb =25°C
Ptot
680
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1ms
100ms
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
300
V
IC=100µ A, IE=0
V(BR)CEO
300
V
IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
6
V
IE=100µ A, IC=0
Collector Cut-Off
Current
ICBO
0.1
µA
VCB=200V, IE=0
Emitter Cut-Off Current IEBO
0.1
µA
VEB=6V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=20mA, I B=2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, I B=2mA*
Static Forward Current hFE
Transfer Ratio
25
40
40
Transition
Frequency
fT
50
Output Capacitance
Cobo
TYP.
MAX.
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
6
MHz
IC=10mA, VCE=20V
f=20MHz
pF
VCB=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-79
B
E
E-Line
TO92 Compatible
60
Current (mA)
0.2
APPLICATIONS
* Telephone dialler circuit
120
200
0.3
MPSA42
ISSUE 2 – MARCH 94
FEATURES
* High voltage
TYPICAL CHARACTERISTICS
160
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
3-78
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