Download 2n3055 - silicon npn transistor

2N3055
SILICON NPN TRANSISTOR
SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION
The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Unit
V CBO
Collector-Base Voltage (IE = 0)
100
V
V CER
Collector-Emitter Voltage (RBE = 100Ω)
70
V
V CEO
Collector-Emitter Voltage (I B = 0)
60
V
V EBO
Emitter-Base Voltage (I C = 0)
7
V
IC
Collector Current
15
A
IB
Base Current
7
A
o
P tot
T otal Dissipation at T c ≤ 25 C
T s tg
Storage Temperature
Tj
Max. O perating Junction Temperature
October 1995
115
W
-65 to 200
o
C
200
o
C
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2N3055
THERMAL DATA
R thj -ca se
Thermal Resistance Junction-case
Max
o
1.5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Parameter
T est Con ditio ns
I CEV
Collector Cut-off
Current (V BE = -1.5V)
V CE = 100 V
V CE = 100 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 30 V
I EBO
Emitter Cut- off Current
(I C = 0)
V EB = 7 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
I C = 200 mA
V CER(sus )∗ Collector-Emitter
Sustaining Voltage
I C = 200 mA
V CE(sat) ∗
R BE = 100 Ω
IC = 4 A
I C = 10 A
IB = 400 mA
IB = 3.3 A
V BE ∗
Base-Emitter Voltage
IC = 4 A
V CE = 4 V
h FE∗
DC Current Gain
IC
IC
IC
IC
IC
IC
VCE
VCE
VCE
VCE
V CE
VCE
h FE1 /hFE1 ∗ DC Current Gain
fT
I s /b∗
0.5 A
0.5 A
0.5 A
0.5 A
4 A
10 A
=
=
=
=
=
=
4
4
4
4
4
4
V
V
V
V
V
V
I C = 0.5 A
VCE = 4 V
Transition frequency
IC = 1 A
V CE = 4 V
Second Breakdown
Collector Current
V CE = 40 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
T j = 150 o C
Collector-Emitter
Saturation Voltage
=
=
=
=
=
=
Min .
Gr oup
Gr oup
Gr oup
Gr oup
4
5
6
7
T yp.
Max.
Unit
1
5
mA
mA
0.7
mA
5
mA
60
V
70
V
20
35
60
120
20
5
1
3
V
V
1.5
V
50
75
145
250
70
1.6
2.5
MHz
2.87
A
2N3055
TO-3 (H) MECHANICAL DATA
mm
DIM.
MIN.
A
inch
TYP.
MAX.
MIN.
TYP.
11.7
B
MAX.
0.460
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9
0.429
N
16.9
0.665
P
26.2
R
3.88
1.031
4.09
U
0.152
39.50
V
1.555
30.10
1.185
A
P
D
C
O
N
B
V
E
G
U
0.161
R
P003N
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2N3055
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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