Download SEMICONDUCTOR IRF3205

SEMICONDUCTOR
IRF3205
TECHNICAL DATA
N-Channel Power MOSFET (55V/120A)
Purpose
Suited for low voltage applications such as automotive,
DC/DC Converters, and high efficiency switching
for power management in portable and battery operated products
Feature
Low RDS(on),low gate charge,low
Crss,fast switching.
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
VDSS
55
V
Drain Current
ID(Tc=25℃)
110
A
Drain Current
A
Drain-Source Voltage
ID(Tc=100℃)
80
Pulsed Drain Current
IDM
390
A
Gate-Source Voltage
VGSS
±20
V
Avalanche Current
IAR
62
A
Single Pulsed Avalanche Energy
EAS
1050
mJ
Repetitive Avalanche Energy
Total Power Dissipation
EAR
20
mJ
PD(Tc=25℃)
200
W
TJ,TSTG
-55 to 150
℃
Junction and Storage Temperature Range
1.Gate 2.Drain 3.Source
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Zero Gate Voltage Drain Current
BVDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Test Conditions
VGS=0V
ID=250μA
IDSS
VDS=55V
VDS=44V
TC=150℃
VGS=0V
VGS=0V
IGSS
VGS=±20V
VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS
ID=250μA
Static Drain-Source
On-Resistance
RDS(on)
VGS=10V
ID=62A
Forward Transconductance
gFS
VDS=25V
ID=62A
Forward On Voltage
VSD
VGS=0V
IS=62A
Input Capacitance
Ciss
VDS=25V
f=1MHz
VGS=0V
Min
Typ
55
2
250
μA
±0.1
μA
4
V
8
mΩ
1.3
V
3247
Crss
211
Turn-On Delay Time
td(on)
14
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Revision No : 0
μA
S
Reverse Transfer Capacitance
2015. 01. 10
25
44
Coss
tf
Unit
V
Output Capacitance
Turn-Off Fall Time
Max
VDD=28V
RG=4.5Ω
ID=62A
781
101
50
pF
ns
65
1/2
IRF3205
Typical Electrical and Thermal Characteristics (Curves)
2015. 01. 10
Revision No : 0
2/2