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HG
Semiconductors
HG RF POWER TRANSISTOR
2N5109
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Features
•
Silicon NPN, To-39 packaged VHF/UHF Transistor
•
1.2 GHz Current-Gain Bandwidth Product @ 50mA
•
Maximum Unilateral Gain = 12dB (typ) @ 200 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
20
Vdc
VCBO
Collector-Base Voltage
40
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
400
mA
2.5
20
Watts
mW/ ºC
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC (1)
Derate above 25ºC
Note : Above parameters , ratings , limits and conditions are subject to change．
www.HGSemi.com
Sep. 1998
HG
HG RF POWER TRANSISTOR
2N5109
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCEO(sus)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
20
-
-
Vdc
BVCER(sus)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
40
-
-
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, IB = 0)
-
-
20
µA
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
-
-
100
µA
5
40
-
120
-
ICEO
IEBO
(on)
HFE
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 15.0 Vdc)
DYNAMIC
Symbol
fT
Test Conditions
Value
Min.
Typ.
Max.
Unit
-
1200
-
MHz
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
FUNCTIONAL
Symbol
G
U max
MAG
2
|S21|
Test Conditions
Value
Min.
Typ.
Max.
Unit
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
-
12
-
dB
Maximum Available Gain
IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
-
11.2
-
dB
Insertion Gain
IC = 50 mAdc, VCE = 15Vdc,
f = 200 MHz
9.5
10.5
-
dB
Note : Above parameters , ratings , limits and conditions are subject to change．
www.HGSemi.com
Sep. 1998
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