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HG
HG RF POWER TRANSISTOR
2SC2879
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 100W PEP
: Gp = 13dB
Power Gain
Collector Efficiency
ηC: = 35% (Min.)
＿
Intermodulation Distortion : IMD = 24dB(Max.)
(M IL S ta n d a rd )
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
RATING
UNIT
V CBO
45
V
45
V
Collector-Emitter Voltage
V CES
Collector-Emitter Voltage
V CEO
18
V
Emitter-Base Voltage
V EBO
4
V
C o lle cto r C u rre n t
IC
25
A
250
W
JEDEC
175
°C
EIAJ
TOSHIBA
Collector Power Dissipation
Ju n ctio n T e m p e ra tu re
Storage Temperature Range
PC
Tj
＿ 65~175
T stg
°C
—
—
2–13B1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V(BR) CEO
IC = 100mA, IB = 0
18
—
—
V
Collector-Emitter Breakdown Voltage
V(BR) CES
IC = 100mA, V EB = 0
45
—
—
V
IE = 1mA, IC = 0
4
VCE = 5V, CI = 10A
10
—
150
V CB = 12.5V, EI = 0
f = 1MHz
—
700
—
1 3 .0
1 5 .2
—
dB
—
6
10
W PEP
35
—
—
%
—
—
Emitter-Base Breakdown Voltage
D C C u rre n t G a in
Collector Output Capacitance
P o w e r G a in
V (BR) EBO
h FE
C ob
Gp
In p u t P o w e r
Pi
Collector Efficiency
ηC
Intermodulation Distortion
V CC = 12.5V, 1f = 28.000MHz
f2 = 28.001MHz
Iidle = 100mA
Po = 100W PEP .(Fig.)
IMD
Series Equivalent Input Impedance
Z in
Series Equivalent Output Impedance
Z out
—
—
V CC = 12.5V, f = 28MHz
Δf = 1kHz, Po = 100W PEP
—
—
V
pF
＿ 24
dB
＿j0.95
—
Ω
＿1.45
j1.0
—
Ω
1.45
Note : Above parameters , ratings , limits and conditions are subject to change．
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Sep. 1998