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G
H
HG RF POWER TRANSISTOR
2SC2879
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
D
A
DESCRIPTION
F
q
C
B
U1
Designed primarily for 2-30MHz SSB
linear power amplifier applications (low
supply voltage use)
c
H
b
L
•
•
•
•
•
4
α
FEATURES
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
D1
U2
1.Collector
2.EMITTER
3.BASE
4.EMITTER
5.FIN
U3
5
w1 M A B
1
2
H
Q
DIMENSIONS
A
A
p
Specified 12.5V, 28MHz Characteristics
PO = 100W PEP
GP = 15.2 Typ. at 100 W/28 MHz
IMD3 = -24 dBc max. at 100 W(PEP)
Omnigold™ Metalization System
UNIT
w2 M C
3
NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE.
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
0.312 0.130
0.249 0.120
α
45°
MAXIMUM RATINGS
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Emitter-Base Voltage
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCES
VCEO
IC
VEBO
PDISS
TJ
T STG
RATINGS
45
45
18
25
4
250
175
-65 to 175
UNITS
V
V
V
A
V
W
°C
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector Output Capacitance
Power Gain
Collector Efficiency
Intermodulation Distortion
Series Equivalent Input Impedance
Series Equivalent Output Impedance
SYMBOL
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
COb
GP
ηC
IMD3
ZIN
ZOUT
TEST CONDITIONS
IC =100mA,IB=0
IC =100mA,VEB=0
IE=1mA,IC =0
VCE=5V,IC =10A
VCB=12.5V,IE=0
f=1MHZ
VCC =12.5V,POUT=100W
Iidle =100mA,f=28MHZ
VCC =12.5V POUT=100W
f=28MHz
MIN.
18
45
4
10
TYP.
-
MAX.
150
UNITS
V
V
V
-
700
-
pF
13.0
35
-
15.2
1.45 – j0.95
1.45 – j1.0
-
dB
%
dBc
Ω
Ω
-24
-
Note : Above parameters , ratings , limits and conditions are subject to change．
www.HGSemi.com
Sep. 1998
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