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G
H
HG RF POWER TRANSISTOR
MRF422
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
D
DESCRIPTION
A
F
q
Designed primarily for applications as
high-power linear power amplifier from
2.0 to 30MHz
C
B
U1
c
H
FEATURES
•
•
•
•
•
b
L
4
α
Specified 28V, 30MHz Characteristics
PO = 150W PEP
GP = 13 Typ. min. at 150 W/30MHz
IMD3 = -30 dBc max. at 150 W(PEP)
Omnigold™ Metalization System
A
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
A
p
D1
U2
1.Collector
2.EMITTER
3.BASE
4.EMITTER
5.FIN
U3
5
w1 M A B
1
2
H
Q
DIMENSIONS
UNIT
w2 M C
3
NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE.
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
0.312 0.130
0.249 0.120
α
45°
MAXIMUM RATINGS
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PDISS
TJ
T STG
RATINGS
85
85
40
3
20
290
-65 to 150
-65 to 150
UNITS
V
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector Output Capacitance
Power Gain
Collector Efficiency
Intermodulation Distortion
Series Equivalent Input Impedance
SYMBOL
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
COb
TEST CONDITIONS
IC =200mA,IB=0
IC =100mA,VEB=0
IE=1mA,IC =0
VCE=5V,IC =5A
VCB=12.5V,IE=0
f=1MHZ
MIN.
35
85
3
15
TYP.
30
MAX.
120
UNITS
V
V
V
-
420
-
pF
-
GP
ηC
IMD3
VCC =28V,POUT=150W
IC Q=150mA,f=30MHZ
10
-
13
45
-33
-30
dB
%
dBc
ZIN
VCC =28V POUT=150W
f=30MHz
-
0.81 – j0.26
-
Ω
Note : Above parameters , ratings , limits and conditions are subject to change．
www.HGSemi.com
Sep. 1998