Download Power Module 1200V 450A IGBT Module MG12450WB

Power Module
1200V 450A IGBT Module
MG12450WB-BN2MM
RoHS
Features
• IGBT3 CHIP(Trench+Field
Stop technology)
• L
ow saturation voltage
and positive temperature
coefficient
• F
ree wheeling diodes
with fast and soft reverse
recovery
• Temperature sense
included
• F
ast switching and short
tail current
Applications
• AC motor control
• Photovoltaic/Fuel cell
• M
otion/servo control
• Inverter and power
supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
TJ max
Max. Junction Temperature
Test Conditions
Min
Typ
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
AC, t=1min
3000
V
210
Torque
Module-to-Sink
Recommended (M5)
2.5
Torque
Module Electrodes
Recommended (M6)
3
Weight
5
N·m
5
N·m
350
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
TJ=25°C
1200
V
±20
V
TC=25°C
600
A
TC=80°C
450
A
tp=1ms
900
A
1950
W
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
MG12450WB-BN2MM
TJ=25°C
1200
V
TC=25°C
450
A
TC=80°C
350
A
tp=1ms
900
A
TJ =125°C, t=10ms, VR=0V
34000
A 2s
1
109
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 450A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=18mA
5.0
5.8
6.5
V
Collector - Emitter
IC=450A, VGE=15V, TJ=25°C
1.7
V
Saturation Voltage
IC=450A, VGE=15V, TJ=125°C
2.0
V
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
VCE=1200V, VGE=0V, TJ=25°C
1
mA
VCE=1200V, VGE=0V, TJ=125°C
5
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=450A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
IC=450A
tf
Fall Time
VGE=±15V
VCC=600V
RG =1.6Ω
Inductive Load
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
1.7
Ω
4.3
μC
32
nF
1.5
nF
TJ=25°C
160
ns
TJ=125°C
170
ns
TJ=25°C
45
ns
TJ=125°C
50
ns
TJ=25°C
460
ns
TJ=125°C
530
ns
TJ=25°C
100
ns
TJ=125°C
150
ns
TJ=25°C
20
mJ
TJ=125°C
31
mJ
TJ=25°C
33
mJ
TJ=125°C
55
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
1800
Junction-to-Case Thermal Resistance (Per IGBT)
A
0.064
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
IF=450A, VGE=0V, TJ =25°C
1.65
V
IF=450A, VGE=0V, TJ =125°C
1.6
V
IF=450A, VR=600V
diF/dt=-7200A/µs
TJ=125°C
255
ns
385
A
38
mJ
Junction-to-Case Thermal Resistance (Per Diode)
0.12
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG12450WB-BN2MM
2
110
Min
Typ
5
KΩ
3375
K
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 450A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
Figure 2: Typical Output Characteristics
for IGBT Inverter
900
750
900
750
600
TJ =25°C
IC (A)
IC (A)
600
450
TJ =125°C
300
150
0.5
1.0
1.5
2.0
VCE˄V˅
2.5
0
3.0
Figure 3: T
ypical Transfer Characteristics
for IGBT Inverter
180
VCE =20V
120
Eon Eoff (mJ)
IC (A)
140
TJ =25°C
Eon
100
450
TJ =125°C
300
5
120
100
6
7
9
8
VGE˄V˅
10
11
0
12
0
6
8 10
RG˄Ω˅
12
14
16
600
IC (A)
400
RG=1.6Ω
VGE=±15V
TJ =125°C
Eon
40
200
20
300
4
800
Eoff
150
2
1000
60
MG12450WB-BN2MM
Eoff
Figure 6: R
everse Biased Safe Operating Area
for IGBT Inverter
VCE=600V
RG=1.6Ω
VGE=±15V
TJ =125°C
80
0
0
60
20
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
140
80
40
150
Eon Eoff (mJ)
VCE=600V
IC=450A
VGE=±15V
TJ =125°C
160
600
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
900
750
TJ =125°C
450
300
150
0
0
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
450
600
IC˄A˅
750
0
900
3
111
0
200
400
600 800 1000 1200 1400
VCE˄V˅
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 450A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
Figure 8: S
witching Energy vs. Gate Resistort
for Diode Inverter
900
45
35
Erec (mJ)
600
IF (A)
IF=450A
VCE=600V
TJ =125°C
40
750
450
25
20
15
TJ =125°C
300
30
10
150
0
5
TJ =25°C
0
0
0.4
0.8
1.6
1.2
VF˄V˅
2.0
2.4
0
2
4
6
8
10
12
14
16
RG˄Ω˅
Figure 9: Transient Thermal Impedance of
Diode and IGBT Inverter
Figure 10: N
TC Characteristics
10
100000
ZthJC (K/W)
1
10000
Diode
0.1
R
IGBT
1000
0.01
0.001
0.001
100
0
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
20
40
80 100 120 140 160
60
TC˄°C˅
Circuit Diagram
MG12450WB-BN2MM
4
112
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1200V 450A IGBT Module
Dimensions-Package WB
The foot pins are in gold / nickel coating
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG12450WB-BN2MM
MG12450WB-BN2MM
350g
Bulk Pack
60
Part Marking System
Part Numbering System
MG12450 WB - B N2 MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CURRENT RATING
MG12450WB-BN2MM
ASSEMBLY SITE
WAFER TYPE
LOT NUMBER
CIRCUIT TYPE
2x(IGBT+FWD)
Space
reserved
for QR
code
PACKAGE TYPE
450: 450A
MG12450WB-BN2MM
5
113
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16